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  3 4a Datasheet PDF File

For 3 4a Found Datasheets File :: 24141    Search Time::1.937ms    
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    FSS140

Sanyo Semicon Device
Part No. FSS140
OCR Text ...nit : mm 2116 [FSS140] 8 5 0.3 4.4 6.0 0.2 5.0 1.5 0.595 1.27 0.43 0.1 1.8max Low ON-resistance. Ultrahigh-speed switching. 4.0V drive...4a, VGS=-4.5V ID=-4a, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test ...
Description Medium Output MOSFETs
Load Switching Applications

File Size 28.44K  /  4 Page

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    Panasonic Battery Group
Part No. UF613756F
OCR Text 3.0 3.5 4.0 4.5 cell voltage / v charge:cc-cv:1.4a-4.2v(28ma cut) discharge:cc:1.4a(e.v.:2.5v) 40 20 0 -10 -20 0 200 400 600 800 1000 1200 1400 1600 discharge capacity / mah 2.0 2.5 3.0 3.5 4.0 4.5 cell voltage / v temp.:20 c...
Description Cell Type UF613756F

File Size 219.22K  /  1 Page

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    TIP2955

Inchange Semiconductor Company Limited
Part No. TIP2955
OCR Text ... applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP2955 Fig.1 simplified outline (TO-3...4a ;IB=-0.4a IC=-10A ;IB=-3.3A IC=-4a ; VCE=-4V VCE=-30V; IB=0 VCE=-70Vdc;RBE=100Ohm VCE=-100Vdc,VBE...
Description Silicon PNP Power Transistors

File Size 132.35K  /  4 Page

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    2SC3894

Savantic, Inc.
Part No. 2SC3894
OCR Text ...t applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratin...4a ;IB=1A IC=4a ;IB=1A VCB=800V ;IE=0 VCE=1500V; RBE=0 IC=1A ; VCE=5V IC=4a ; VCE=5V 8 4 MIN 800 ...
Description Silicon NPN Power Transistors

File Size 201.93K  /  4 Page

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    Micross Components
Part No. ICE4N73
OCR Text ...+150 c mounting torque 60 ncm m 3 & 3.5 screws maximum ratings @ tj = 25c, unless otherwise specifed product summary i d t a = 25c 4a max v (br)dss i d = 250ua 730v min r ds(on) v gs = 10v 1.0? typ q g v ds = 480v 21nc typ micross comp...
Description N-Channel Enhancement Mode MOSFET

File Size 563.29K  /  4 Page

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    Icemos Technology
Part No. ICE4N73
OCR Text ... and its sister company 3 d semi own the fundamental patents for superjunction mosfets . the majority of the...4a, t j =125 o c 50 v/ns gate source voltage v gs static 20 v ac ( f >1hz) 30 ...
Description Enhancement Mode MOSFET

File Size 581.83K  /  8 Page

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    Micross Components
Part No. ICE4N73FP
OCR Text ...esistance, junction to case - - 3.5 c/w r thja thermal resistance, junction to ambient - - 68 leaded t sold soldering temperature, wave sol...4a, r g = 4? (external) t r rise time - 5 - t d(of ) turn-of delay time - 67 - t f fall time - 4.5...
Description N-Channel Enhancement Mode MOSFET

File Size 550.40K  /  4 Page

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    Icemos Technology
Part No. ICE4N73FP
OCR Text 3=source d s g ice4n73fp n - channel enhancement mode mosfet features ? low r ds(on) ? ultra low gate charge ? high d...4a max v ( br)dss i d =250ua 730v min r ds(on) v gs =10v 1.0 typ q g v ds =480...
Description Enhancement Mode MOSFET

File Size 744.62K  /  9 Page

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    Micross Components
Part No. ICE4N73D
OCR Text ...+150 c mounting torque 60 ncm m 3 & 3.5 screws maximum ratings @ tj = 25c, unless otherwise specifed product summary i d t a = 25c 4a max v (br)dss i d = 250ua 730v min r ds(on) v gs = 10v 1.0? typ q g v ds = 480v 21nc typ micross comp...
Description N-Channel Enhancement Mode MOSFET

File Size 563.01K  /  4 Page

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    Icemos Technology
Part No. ICE4N73D
OCR Text ... and its sister company 3 d semi own the fundamental patents for superjunction mosfets . the majority of the...4a, t j =125 o c 50 v/ns gate source voltage v gs static 20 v ac ( f >1hz) 30 ...
Description Enhancement Mode MOSFET

File Size 613.37K  /  8 Page

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