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Panasonic Battery Group
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| Part No. |
UF613756F
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| OCR Text |
3.0 3.5 4.0 4.5 cell voltage / v charge:cc-cv:1.4a-4.2v(28ma cut) discharge:cc:1.4a(e.v.:2.5v) 40 20 0 -10 -20 0 200 400 600 800 1000 1200 1400 1600 discharge capacity / mah 2.0 2.5 3.0 3.5 4.0 4.5 cell voltage / v temp.:20 c... |
| Description |
Cell Type UF613756F
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| File Size |
219.22K /
1 Page |
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Micross Components
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| Part No. |
ICE4N73
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| OCR Text |
...+150 c mounting torque 60 ncm m 3 & 3.5 screws maximum ratings @ tj = 25c, unless otherwise specifed product summary i d t a = 25c 4a max v (br)dss i d = 250ua 730v min r ds(on) v gs = 10v 1.0? typ q g v ds = 480v 21nc typ micross comp... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
563.29K /
4 Page |
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it Online |
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Icemos Technology
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| Part No. |
ICE4N73
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| OCR Text |
... and its sister company 3 d semi own the fundamental patents for superjunction mosfets . the majority of the...4a, t j =125 o c 50 v/ns gate source voltage v gs static 20 v ac ( f >1hz) 30 ... |
| Description |
Enhancement Mode MOSFET
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| File Size |
581.83K /
8 Page |
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it Online |
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Micross Components
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| Part No. |
ICE4N73FP
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| OCR Text |
...esistance, junction to case - - 3.5 c/w r thja thermal resistance, junction to ambient - - 68 leaded t sold soldering temperature, wave sol...4a, r g = 4? (external) t r rise time - 5 - t d(of ) turn-of delay time - 67 - t f fall time - 4.5... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
550.40K /
4 Page |
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it Online |
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Icemos Technology
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| Part No. |
ICE4N73FP
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| OCR Text |
3=source d s g ice4n73fp n - channel enhancement mode mosfet features ? low r ds(on) ? ultra low gate charge ? high d...4a max v ( br)dss i d =250ua 730v min r ds(on) v gs =10v 1.0 typ q g v ds =480... |
| Description |
Enhancement Mode MOSFET
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| File Size |
744.62K /
9 Page |
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it Online |
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Micross Components
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| Part No. |
ICE4N73D
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| OCR Text |
...+150 c mounting torque 60 ncm m 3 & 3.5 screws maximum ratings @ tj = 25c, unless otherwise specifed product summary i d t a = 25c 4a max v (br)dss i d = 250ua 730v min r ds(on) v gs = 10v 1.0? typ q g v ds = 480v 21nc typ micross comp... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
563.01K /
4 Page |
View
it Online |
Download Datasheet
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Icemos Technology
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| Part No. |
ICE4N73D
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| OCR Text |
... and its sister company 3 d semi own the fundamental patents for superjunction mosfets . the majority of the...4a, t j =125 o c 50 v/ns gate source voltage v gs static 20 v ac ( f >1hz) 30 ... |
| Description |
Enhancement Mode MOSFET
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| File Size |
613.37K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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