Part Number Hot Search : 
ZMM5229 FDS49 MC33912 MEH11ZBA 20022 1N5913BG 02F5F 2PD602AS
Product Description
Full Text Search
  3 3v-5v 4 mbit 512kb x8 timeke Datasheet PDF File

For 3 3v-5v 4 mbit 512kb x8 timeke Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

    ST Microelectronics, Inc.
Part No. M58LR128GU
Description The M58LR128GU/L and M58LR256GU/L are 128 mbit (8 mbit x16) and 256 mbit (16 mbit
File Size 618.97K  /  114 Page

View it Online

Download Datasheet





    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. M38030F2L-XXXHP M38030F2L-XXXKP M38030F2L-XXXSP M38030F2L-XXXWG M38030MAL-XXXWG M38030MAL-XXXKP M38030FAL-XXXSP M38031FAL-XXXHP M38030FAL-XXXWG M38030MAL-XXXHP M38030FAL-XXXKP M38031FAL-XXXKP M38030FAL-XXXHP M38031FAL-XXXSP M38031FAL-XXXWG M38030MAL-XXXSP M38030F3L-XXXHP M38030F3L-XXXWG M38030M3L-XXXKP M38030F3L-XXXSP M38030F3L-XXXKP M38030M3L-XXXHP M38030FBL-XXXWG M38030MBL-XXXHP M38030FBL-XXXHP M38030FBL-XXXSP M38030MBL-XXXKP M38030M2L-XXXHP M38030M2L-XXXKP M38030M2L-XXXSP M38030M2L-XXXWG M38031F2L-XXXHP M38031F2L-XXXKP M38031F2L-XXXSP M38031F2L-XXXWG M38030FB-XXXHP M38031FBL-XXXSP M38035MBL-XXXSP M38038FBL-XXXSP M38039FBL-XXXSP M38030MBL-XXXSP M38036MBL-XXXSP M38037FBL-XXXSP M38037MBL-XXXSP M38036FBL-XXXSP M38038MBL-XXXSP M38031FC-XXXHP M38031FC-XXXKP M38031FC-XXXWG M38031FCL-XXXHP M38031FCL-XXXKP M38031FCL-XXXSP M38031FCL-XXXWG M38031F5-XXXKP M38031F5-XXXSP M38031F5-XXXWG M38031F5L-XXXHP M38031F5L-XXXKP M38031F5L-XXXSP M38031F5L-XXXWG M38030F1-XXXHP M38030F1-XXXKP M38030F1-XXXSP M38030F1-XXXWG M38030F1L-XXXHP M38030F1L-XXXKP M38030F1L-XXXSP M38030F1L-XXXWG M38031F1-XXXKP M38031F1-XXXWG M38031F1L-XXXHP M38031F1L-XXXKP M38031F6-XXXHP M38031F6-XXXKP M38031F6-XXXSP M38031F6-XXXWG M
Description 256 Kbit (32K x 8) nvSRAM; Organization: 32Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 256 Kb; Package: SOIC
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.50 to 5.50 V;
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 1 MHz to 200 MHz; Outputs: 6
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 256; Vcc (V): 3.3; fMax (MHz): 66; tPD (ns): 12
8-mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512kb x 16; Vcc (V): 2.20 to 3.60 V;
9-mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 512kb x 18; Vcc (V): 3.1 to 3.6 V
9-mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 512kb x 18; Vcc (V): 3.1 to 3.6 V
18-mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512kb x 36; Vcc (V): 1.7 to 1.9 V
Four Output PCI-X and General Purpose Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 140 MHz; Outputs: 4; Operating Range: 0 to 70 C
18-mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 512kb x 36; Vcc (V): 1.7 to 1.9 V
9-mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 512kb x 18; Vcc (V): 3.1 to 3.6 V
9-mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512kb x 18; Vcc (V): 2.4 to 2.6 V
4-mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512kb x 8; Vcc (V): 4.50 to 5.50 V;
4-mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V;
64K x 16 Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
1-mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
1-mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
4 mbit (512K x 8/256K x 16) nvSRAM; Organization: 512kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
4 mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
16-mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V;
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY; Density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns
9-mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V
9-mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512kb x 18; Vcc (V): 3.1 to 3.6 V
8-mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512kb x 16; Vcc (V): 4.50 to 5.50 V;
9-mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
4-mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-mbit (1024K x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
18-mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: -40 to 85 C
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C
18-mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 18 Mb; Organization: 512kb x 36; Vcc (V): 3.1 to 3.6 V
18-mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
512K x 8 Static RAM; Density: 4 Mb; Organization: 512kb x 8; Vcc (V): 4.5 to 5.5 V;
18-mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512kb x 36; Vcc (V): 2.4 to 2.6 V
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C
2M x 8 Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V;
16 mbit (512K X 32) Static RAM; Density: 16 Mb; Organization: 512kb x 32; Vcc (V): 3.0 to 3.6 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: 0 to 70 C
8-mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V;
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6
2-mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V;
16-mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
4-mbit (256K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V
512K (32K x 16) Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 3.0 to 3.6 V;
4-mbit (128K x 36) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
1M x 16 Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C
MoBL(R) 2 mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
Rambus(R) XDR(TM) Clock Generator; VDD: 2.5 V; Input Frequency: 100 MHz to 133 MHz; Output Frequency: 300 MHz to 800 MHz; # Out: 4
2-mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
4-mbit (128K x 36) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 167; tPD (ns): 7
2.5V or 3.3V, 200-MHz, 1:10 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 10; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 100; tPD (ns): 7
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 7
18-mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 18 Mb; Organization: 512kb x 36; Vcc (V): 1.7 to 1.9 V
Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 25 MHz to 100 MHz; Output Frequency Range: 25 MHz to 100 MHz; Operating Range: 0 to 70 C; Package: SOIC
Low Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 143; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 154; tPD (ns): 6 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 3.3; fMax (MHz): 83; tPD (ns): 10 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 单芯位CMOS微机
Three-PLL General-Purpose EPROM Programmable Clock Generator; Voltage (V): 3.3/5.0 V; Input Range: 1 MHz to 30 MHz; Output Range: .077 MHz to 100 MHz; Outputs: 6 单芯位CMOS微机
8-mbit (512K x 16) MoBL(R) Static RAM; Density: 8 Mb; Organization: 512kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 100 MHz; Outputs: 10; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: -40 to 85 C 单芯位CMOS微机
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
2-mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机
MoBL(R) 1 mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
18-mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
1-mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机
4-mbit (256K x 18) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
2-mbit (64K x 32) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
200-MHz Field Programmable Zero Delay Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 10 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 单芯位CMOS微机
2-mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
2-mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机
Very Low Jitter Field and Factory Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 10 MHz to 133 MHz; Output Range: 20 MHz to 200 MHz; Outputs: 2 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 单芯位CMOS微机
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 0 MHz to 200 MHz; Outputs: 3 单芯位CMOS微机
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
Quad PLL Clock Generator with 2-Wire Serial Interface; Voltage (V): 2.5/3.3 V; Input Range: 27 MHz to 27 MHz; Output Range: 4.2 MHz to 166 MHz; Outputs: 5 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C 单芯位CMOS微机
High Speed Multi-phase PLL Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 24 MHz to 200 MHz; Outputs: 11; Operating Range: 0 to 70 C 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 18; Operating Range: -40 to 85 C 单芯位CMOS微机
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 4 MHz to 32 MHz; Output Frequency Range: 4 MHz to 32 MHz; Operating Range: 0 to 70 C; Package: SOIC
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9
File Size 1,602.57K  /  119 Page

View it Online

Download Datasheet
    Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
Part No. CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA-BA25XC CY14B104NA-BA20XC
Description 4 mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 mbit (512K x 8/256K x 16) nvSRAM; Organization: 512kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
File Size 613.78K  /  23 Page

View it Online

Download Datasheet
    Silicon Storage Technology Inc
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
Part No. 49LF002 SST49LF003A-33-4C-NH SST49LF003A-33-4C-WH SST49LF002A-33-4C-WH SST49LF002A-33-4C-NH SST49LF004A-33-4C-NH SST49LF004A-33-4C-WH SST49LF008A-33-4C-WH SST49LF008A-33-4C-NH
Description MB 6C 6#20 SKT PLUG
2 mbit / 3 mbit / 4 mbit / 8 mbit Firmware Hub 384K X 8 FLASH 3V PROM, 11 ns, PQCC32
2 mbit / 3 mbit / 4 mbit / 8 mbit Firmware Hub 256K X 8 FLASH 3V PROM, 11 ns, PQCC32
2 mbit / 3 mbit / 4 mbit / 8 mbit Firmware Hub 512K X 8 FLASH 3V PROM, 11 ns, PQCC32
File Size 394.84K  /  36 Page

View it Online

Download Datasheet
    M36W0R6040B3ZAQE M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36W0R6050T3 M36W0R6050T3ZAQE M36W0R6050T3ZAQF M36W0R604

Numonyx B.V
http://
Part No. M36W0R6040B3ZAQE M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36W0R6050T3 M36W0R6050T3ZAQE M36W0R6050T3ZAQF M36W0R6040T3ZAQE M36W0R6040T3ZAQF M36W0R6040B3ZAQF
Description 64-mbit (4 mbits ×16, multiple bank, burst) Flash memory and 16-mbit (1 mbit ×16) or 32-mbit (2 mbits x16) PSRAM MCP
File Size 435.20K  /  23 Page

View it Online

Download Datasheet
    Motorola, Inc.
Motorola Mobility Holdings, Inc.
Part No. MPC2104P MPC2105P
Description (MPC2104P / MPC2105P) 256KB/512kb BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
256KB/512kb BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 256KB/512kb BurstRAM二级缓存模块为PowerPC制备/ CH旺平
File Size 162.22K  /  16 Page

View it Online

Download Datasheet
    M27C4001-35F1TR M27C4001-35F1X M27C4001-35F6TR M27C4001-35F6X M27C4001-55F1TR M27C4001-55F1X M27C4001-55F6TR M27C4001-55

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. M27C4001-35F1TR M27C4001-35F1X M27C4001-35F6TR M27C4001-35F6X M27C4001-55F1TR M27C4001-55F1X M27C4001-55F6TR M27C4001-55F6X M27C4001-12F M27C4001-55B1TR M27C4001-55B1X M27C4001-55B6TR M27C4001-55B6X M27C4001-55C1TR M27C4001-55C1X M27C4001-55C6TR M27C4001-55C6X M27C4001-90XN6X 27C4001 M27C4001 M27C4001-10B1 M27C4001-10B1TR M27C4001-10B1X M27C4001-10B6TR M27C4001-10B6X M27C4001-10C1TR M27C4001-10C1X M27C4001-10C6TR M27C4001-10C6X M27C4001-10F1TR M27C4001-10F1X M27C4001-10F6TR M27C4001-10F6X M27C4001-10L1TR M27C4001-10L1X M27C4001-10L6TR M27C4001-10L6X M27C4001-10N1TR M27C4001-10N1X M27C4001-10N6TR M27C4001-10N6X M27C4001-10XB1TR M27C4001-10XB1X M27C4001-10XB6TR M27C4001-10XB6X M27C4001-10XC1TR M27C4001-10XC1X M27C4001-10XC6TR M27C4001-10XC6X M27C4001-10XF1TR M27C4001-10XF1X M27C4001-10XF6TR M27C4001-10XF6X M27C4001-10XL1TR M27C4001-10XL1X M27C4001-10XL6TR M27C4001-10XL6X M27C4001-10XN1TR M27C4001-10XN1X M27C4001-10XN6TR M27C4001-10XN6X M27C4001-12B1TR M27C4001-12B1X M27C4001-12B6TR M27C4001-12B6X M27C4001-12C1TR M27C4001-12C1X M27C4001-12C6TR M27C4001-12C6X M27C4001-12F1TR M27C4001-12F1X M27C4001-12F6TR M27C4001-12F6X M27C4001-12L1TR M27C4001-12L1X M27C4001-12L6TR M27C4001-12L6X M27C
Description 4 mbit (512kb x8) UV EPROM AND OTP ROM
CAP 1000PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 0.01UF 25V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 0.01UF 25V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1000PF 100V 10% NP0(C0G) SMD-1206 TR-13-PL SN-NIBAR
CAP 1000PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 0.01UF 25V 20% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 12PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 120PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1300PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1000PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 12PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
LED Lamp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
4 mbit 512kb x 8 UV EPROM and OTP EPROM 4兆位× 8紫外12KB的存储器和OTP存储
SERVSWITCH USB COAX CPU CABLES, WITH AUDIO 20FT 4兆位× 8紫外12KB的存储器和OTP存储
File Size 157.32K  /  17 Page

View it Online

Download Datasheet
    M27V402 M27V402-120B1TR M27V402-120B4TR M27V402-120B5TR M27V402-120B6TR M27V402-120F1TR M27V402-120F4TR M27V402-120F5TR

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. M27V402 M27V402-120B1TR M27V402-120B4TR M27V402-120B5TR M27V402-120B6TR M27V402-120F1TR M27V402-120F4TR M27V402-120F5TR M27V402-120F6TR M27V402-120K1TR M27V402-120K4TR M27V402-120K5TR M27V402-120K6TR M27V402-120N1TR M27V402-120N4TR M27V402-120N5TR M27V402-120N6TR M27V402-150B1TR M27V402-150B4TR M27V402-150B5TR M27V402-150B6TR M27V402-150F1TR M27V402-150F4TR M27V402-150F5TR M27V402-150F6TR M27V402-150K1TR M27V402-150K4TR M27V402-150K5TR M27V402-150K6TR M27V402-150N1TR M27V402-150N4TR M27V402-150N5TR M27V402-150N6TR M27V402-200B1TR M27V402-200B4TR M27V402-200B5TR M27V402-200B6TR M27V402-200F1TR M27V402-200F4TR M27V402-200F5TR M27V402-200F6TR M27V402-200K1TR M27V402-200K4TR M27V402-200K5TR M27V402-200K6TR M27V402-200N1TR M27V402-200N4TR M27V402-200N5TR M27V402-200N6TR 4375 M27V402-180N6TR M27V401-200N6TR -M27V402-200F6TR
Description 4 mbit 256Kb x 16 Low Voltage UV EPROM and OTP EPROM 4兆位56Kb × 16低压紫外线存储器和OTP存储
Quadruple 2-Input Positive-AND Gates 14-SOIC 0 to 70
Quadruple 2-Input Positive-AND Gates 14-SO 0 to 70
Hex Inverters 14-SO 0 to 70
Quadruple 2-Input Positive-NOR Gates 14-PDIP 0 to 70
Quadruple 2-Input Positive-NAND Gates 14-PDIP 0 to 70
Quadruple 2-Input Positive-NOR Gates 14-SOIC 0 to 70
Hex Inverters 14-SOIC 0 to 70
Switch Mode Power Supply; Series:ZWS; Output Voltage:15VDC; Output Power Max:10W; Output Current:0.7A; Number of Outputs:1; Supply Voltage Max:265VAC; Supply Voltage Min:85VAC
Switch Mode Power Supply; Output Power:100W; No. of Outputs:1; Output 1 VDC :12VDC; Output Current 1:8.5A; Power Supply Mounting:Open Frame; Approval Bodies:UL, CSA, CE; External Depth:222mm; External Width:62mm RoHS Compliant: Yes
Switch Mode Power Supply; Series:ZWS; Output Voltage:12VDC; Output Power Max:10W; Output Current:0.85A; Number of Outputs:1; Supply Voltage Max:265VAC; Supply Voltage Min:85VAC
Hex Inverters 14-PDIP 0 to 70
From old datasheet system
4 mbit 512kb x 8 Low Voltage OTP EPROM
4 mbit 512kb x8 Low Voltage UV EPROM and OTP EPROM
File Size 99.69K  /  15 Page

View it Online

Download Datasheet
    M29DW127G M29DW127G70NF6E

Numonyx B.V
Part No. M29DW127G M29DW127G70NF6E
Description 128-mbit (8 mbit x16 or 16 mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
File Size 1,927.14K  /  95 Page

View it Online

Download Datasheet
    PMC-Sierra, Inc.
Part No. PM39F020-70JCE PM39F020-55PCE PM39F020-55JCE PM39F020-55VCE PM39F010-55PCE PM39F010-55VCE PM39F010-55JCE PM39F020-70VC PM39F040-70VCE PM39F020-70VCE PM39F040-55PCE PM39F010-70PCE PM39F040-70PCE PM39F040-55JCE PMC-SIERRAINC.-PM39F020-55VCE PMC-SIERRAINC.-PM39F020-55JCE PM39F020-70PC
Description 1 mbit / 2 mbit / 4 mbit 5 Volt-only CMOS Flash Memory 1兆位/ 2 4兆位5伏，只有闪存的CMOS
File Size 140.68K  /  23 Page

View it Online

Download Datasheet

For 3 3v-5v 4 mbit 512kb x8 timeke Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

▲Up To Search▲
 




Price and Availability
 
Price & Availability of 3 3v-5v 4 mbit 512kb x8 timeke

All Rights Reserved © IC-ON-LINE 2003 - 2022  
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]
 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.2141411304474