| |
|
 |
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| Part No. |
RFH12N40 RFH12N35
|
| OCR Text |
...MBOL BVDSS TEST CONDITIONS ID = 250a, VGS = 0V 350 400 VGS(TH) IDSS VGS = VDS, ID = 250a, (Figure 8) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x...300 VDD = BVDSS 200
GATE SOURCE VOLTAGE RL = 33.3 IG(REF) = 2.5mA VGS = 10V
8
VDD = BVDSS
... |
| Description |
12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs 12 A, 350 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
12A/ 350V and 400V/ 0.380 Ohm/ N-Channel Power MOSFETs
|
| File Size |
39.96K /
5 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
RFP18N10 RFM18N08 RFM18N10 RFP18N08
|
| OCR Text |
...MBOL BVDSS TEST CONDITIONS ID = 250a, VGS = 0V 80 100 VGS(TH) VGS = VDS, ID = 250a, (Figure 8) IDSS VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x ...300 150 150 4 1 25 100 0.100 1.8 90 450 225 225 1700 750 300 1.25 1.67 V V V A A nA V ns ns ns ns p... |
| Description |
18A/ 80V and 100V/ 0.100 Ohm/ N-Channel Power MOSFETs
18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs
|
| File Size |
37.94K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
IRF[International Rectifier]
|
| Part No. |
IRG4PH50KD IRG4PH50KD-E
|
| OCR Text |
... Conditions -- V VGE = 0V, IC = 250a -- V/C VGE = 0V, IC = 1.0mA 3.5 IC = 24A VGE = 15V -- V IC = 45A See Fig. 2, 5 -- IC = 24A, TJ = 150C 6...300 IC = 24A, VCC = 800V 300 VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ and diode rev... |
| Description |
45 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.77V @Vge=15V Ic=24A)
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
|
| File Size |
221.27K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
RFP6N50 RFM6N45 RFP6N45
|
| OCR Text |
...MBOL BVDSS TEST CONDITIONS ID = 250a, VGS = 0V 450 500 VGS(TH) IDSS VGS = VDS, ID = 250a (Figure 8) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x ...300 100 1500 250 200 1.25 1.67 V V V A A nA V ns ns ns ns pF pF pF
oC/W oC/W
Electrical Specifi... |
| Description |
6A/ 450V and 500V/ 1.250 Ohm/ N-Channel Power MOSFETs
6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs
|
| File Size |
32.43K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
RFT2P03L
|
| OCR Text |
...Figure 13) TEST CONDITIONS ID = 250a, VGS = 0V (Figure 11) VGS = VDS, ID = 250a (Figure 10) VDS = -30V, VGS = 0V VDS = -30V, VGS = 0V, TA = ...300 13 18 43 24 27 14 1.3 620 240 30 MAX -3 -1 -50 100 0.150 0.360 50 100 33 17 1.6 110 128 147 UNIT... |
| Description |
2.1A/ 30V/ 0.150 Ohm/ P-Channel Logic Level/ Power MOSFET
2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET
|
| File Size |
91.30K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
RLP03N06CLE RLD03N06CLE RLD03N06CLESM
|
| OCR Text |
..., f = 1MHz TEST CONDITIONS ID = 250a, VGS = 0V VGS = VDS, ID = 250a VDS = 45V, VGS = 0V VGS = 5V ID = 0.100A, VGS = 5V VDS = 15V, VGS = 5V T...300, VGS = 5V, RGS = 25
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Vol... |
| Description |
0.3A/ 60V/ 6 Ohm/ ESD Rated/ Current Limited/ Voltage Clamped/ Logic Level N-Channel Power MOSFETs
0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 额定,电流限制,电压箝位,逻辑电平N沟道功率MOS场效应管)
|
| File Size |
92.90K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| Part No. |
HUF76423S3S HUF76423P3 FN4708 HUF76423S3ST HUF76423P3T
|
| OCR Text |
... IDSS IGSS VGS(TH) rDS(ON) ID = 250a, VGS = 0V (Figure 12) ID = 250a, VGS = 0V , TC = -40oC (Figure 12) Zero Gate Voltage Drain Current VDS ...300
(Continued)
300 IAS, AVALANCHE CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) I... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 36A条（丁）|63AB
N-Channel NexFET Power MOSFET 8-SON -55 to 150
33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
From old datasheet system
|
| File Size |
357.80K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
SENSITRON[Sensitron]
|
| Part No. |
SBF50P10-023L
|
| OCR Text |
...AKDOWN VOLTAGE VGS = 0V, ID = - 250a STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = - 10V, ID = - 20A VGS = - 4.5V, ID = - 15A GATE THRESH...300 s, duty cycle d 2 % REVERSE RECOVERY TIME TJ = 25C, IF= - 20A, VR = - 50V di/dt = - 100A/sec IN... |
| Description |
RAD TOLERANT LOW RDS HERMETIC POWER MOSFET - P-CHANNEL
|
| File Size |
154.60K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
International Rectifier, Corp.
|
| Part No. |
IRG4PH50UDPBF
|
| OCR Text |
... 1200 ? ? v v ge = 0v, i c = 250a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 1.20 ? v/c v ge = 0v, i c = 1.0ma v ce(...300 100 1000 trr - (ns) f di /dt - ( a/ s ) i = 3 2 a i = 1 6a i = 8.0a f f f v = 200v... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 绝缘栅双极型晶体管，超快软恢复二极管
|
| File Size |
679.33K /
11 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
