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				Qimonda AG
Part No.	HYS64T256022EDL HYS64T256022EDL-2.5-B HYS64T256022EDL-25F-B HYS64T256022EDL-3-B HYS64T256022EDL-3.7-B HYS64T256022EDL-3S-B
OCR Text	200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules DDR2 SDRAM SO-DIMM SDRAM RoHS Compliant Internet Data Sheet Rev. 1.0 Internet Data ...Column Address Strobe (CAS) latency = 4, Row Column Delay (RCD) latency = 4 and Row Precharge (RP) l...
Description	200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules
File Size	1,064.56K / 40 Page	View it Online	Download Datasheet

				Qimonda AG
Part No.	HYS64T256020EDL HYS64T256020EDL-2.5-C HYS64T256020EDL-25F-C HYS64T128020EDL-2.5-C HYS64T128020EDL-25F-C HYS64T256020EDL-3-C HYS64T256020EDL-3.7-C HYS64T256020EDL-3S-C HYS64T128020EDL-3-C HYS64T128020EDL-3.7-C HYS64T128020EDL-3S-C
OCR Text	...hapter gives an overview of the 200-Pin SO-DIMM DDR2 SDRAM Modules product family and describes its main characteristics. 1.1 Features...Column Address Strobe (CAS) latency = 4, Row Column Delay (RCD) latency = 4 and Row Precharge (RP) l...
Description	200-Pin SO-DIMM DDR2 SDRAM Modules
File Size	1,224.19K / 51 Page	View it Online	Download Datasheet

				Qimonda AG
Part No.	HYS64T128020EML HYS64T128020EML-3.7-B HYS64T128020EML-3S-B HYS64T128020EML-5-B
OCR Text	...5-5 -3.7 PC2-4200 4-4-4 266 266 200 15 15 45 60 -5 PC2-3200 3-3-3 200 200 200 15 15 40 55 Units -- tck MHz MHz MHz ns ns ns ns fCK5 fCK4 ...Column Address Strobe (CAS) latency = 4, Row Column Delay (RCD) latency = 4 and Row Precharge (RP) l...
Description	214-Pin Unbuffered DDR2 SDRAM MicroDIMM Modules Low Power
File Size	793.86K / 39 Page	View it Online	Download Datasheet

				Qimonda AG
Part No.	HYS64T128020EDL HYS64T128020EDL-2.5-B HYS64T128020EDL-3S-B
OCR Text	...hapter gives an overview of the 200-pin small-outline DDR2 SDRAM modules product family and describes its main characteristics. 1.1 Fe...Column Address Strobe (CAS) latency =6, Row Column Delay (RCD) latency = 6 and Row Precharge (RP) la...
Description	200-Pin Small-Outlined DDR2 SDRAM Modules
File Size	1,367.84K / 43 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4D263238G-VC K4D263238G-GC36 K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33
OCR Text	...nd to reset DLL. The additional 200 clock cycles are required to lock the DLL. *1,2 7. Issue precharge command for all banks of the device. ...column address) uses A4 ~ A6. A7 is used for test mode. A8 is used for DLL reset. A7,A8, BA0 and BA1...
Description	128Mbit GDDR SDRAM
File Size	427.94K / 20 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S510832B-TC75 K4S510832B-TCL75 K4S510432B-TC K4S510432B-TC75 K4S510432B-TCL75 K4S511632B-TC75 K4S511632B-TCL75
OCR Text	...TA = 23C, f = 1MHz, VREF =1.4V 200 mV) Pin Symbol CCLK CIN CADD COUT Min 2.5 2.5 2.5 4.0 Max 3.5 3.8 3.8 6.0 Unit pF pF pF pF RAS, CAS, ...column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. ...
Description	512Mb B-die SDRAM Specification
File Size	147.30K / 15 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S560832A-TC_L75 K4S560832A-TC_L80 K4S560832A-TC/L80 K4S560832A-TC/L1H K4S560832A-TC/L1L K4S560832A-TC/L75
OCR Text	...TA = 23C, f = 1MHz, VREF =1.4V 200 mV) Pin Symbol CCLK CIN CADD COUT Min 2.5 2.5 2.5 4.0 Max 4.0 5.0 5.0 6.5 Unit pF pF pF pF Note 1 2 2 3 ...column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. 5....
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
File Size	125.57K / 10 Page	View it Online	Download Datasheet

				Etron Technology, Inc.
Part No.	EM68932DVKA EM68932DVKA-6H EM68932DVKA-75H
OCR Text	... 100 A * Self Refresh Current = 200 A * Deep power-down Current = 10 A max. at 85 * Auto Refresh and Self Refresh * 4096 refresh cycles / 64...Column Decoder A10/AP COLUMN COUNTER MODE REGISTER 1M x 32 CELL ARRAY (BANK #1) Column D...
Description	4M x 32 Mobile DDR Synchronous DRAM (SDRAM)
File Size	326.31K / 40 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4D26323QG K4D26323QG-GC33 K4D26323QG-GC25 K4D26323QG-GC2A
OCR Text	...nd to reset DLL. The additional 200 clock cycles are required to lock the DLL. *1,2 7. Issue precharge command for all banks of the device. ...column address) uses A4 ~ A6. A7 is used for test mode. A8 is used for DLL reset. A7,A8, BA0 and BA1...
Description	128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
File Size	313.05K / 18 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4D553235F-GC33 K4D553235F-GC K4D553235F-GC25 K4D553235F-GC2A
OCR Text	...nd to reset DLL. The additional 200 clock cycles are required to lock the DLL. *1,2 7. Issue precharge command for all banks of the device. ...column address) uses A4 ~ A6. A7 is used for test mode. A8 is used for DLL reset. A7,A8, BA0 and BA1...
Description	256M GDDR SDRAM
File Size	383.59K / 18 Page	View it Online	Download Datasheet

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