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Sony
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| Part No. |
CXG1045N
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| OCR Text |
...l voltage: Vctl (H) - Vctl (L): 2.5 to 5V @Ta = 25C
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information... |
| Description |
High Power DPDT Switch for GSM From old datasheet system
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| File Size |
60.34K /
5 Page |
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Download Datasheet
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FA01219A
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| OCR Text |
...power 3.5V 22.5B 50% 30.5dBm
2
7
3
6
4
5
APPLICATION
PDC0.8GHz
GND 10.0
0.8 2.0 6.0
1 RF INPUT 2 VD1 3 4 5 6
GND VD2
RF OUTPUT GND 7 GND 8 VG1,2
tolerance:0.2
ABSOLUTE MAXIMUM RATINGS
Symbol VD Pin ... |
| Description |
GaAs FET HYBRID IC From old datasheet system
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| File Size |
22.92K /
4 Page |
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it Online |
Download Datasheet
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United Monolithic Semic... UMS[United Monolithic Semiconductors]
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| Part No. |
CHA7010-99 CHA7010-99F_00 CHA7010 CHA7010-99F/00
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| OCR Text |
... 30% Symbol
F_op G_lin_1 G_lin_2 G_lin_T RL_in RL_out P_sat_1 P_sat_2 P_sat_T P_1dBc_1 P_1dBc_2 PAE_sat PAE_1dBc Vc Ic Vctr Zctr Top
CHA...8GHz) Saturated output power (9.8 to 10.4GHz) Saturated output power variation versus temperature Ou... |
| Description |
X-band GaInP HBT High Power Amplifier
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| File Size |
156.54K /
7 Page |
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it Online |
Download Datasheet
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