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  2-8ghz Datasheet PDF File

For 2-8ghz Found Datasheets File :: 1203    Search Time::5.422ms    
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    Sony
Part No. CXG1045N
OCR Text ...l voltage: Vctl (H) - Vctl (L): 2.5 to 5V @Ta = 25C GaAs MMICs are ESD sensitive devices. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information...
Description High Power DPDT Switch for GSM
From old datasheet system

File Size 60.34K  /  5 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FA01219A
OCR Text ...power 3.5V 22.5B 50% 30.5dBm 2 7 3 6 4 5 APPLICATION PDC0.8GHz GND 10.0 0.8 2.0 6.0 1 RF INPUT 2 VD1 3 4 5 6 GND VD2 RF OUTPUT GND 7 GND 8 VG1,2 tolerance:0.2 ABSOLUTE MAXIMUM RATINGS Symbol VD Pin ...
Description GaAs FET HYBRID IC
From old datasheet system

File Size 22.92K  /  4 Page

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    FLC057WG

Eudyna Devices Inc
Part No. FLC057WG
OCR Text ...DS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 4.4 and -0.25 mA respectively with gate resistanc...8GHz IDS 0.6 IDSS Output Power (dBm) P1dB (dBm) 28 IDS 0.6 IDSS 26 Pout 24 22 20 18 16 ...
Description C-Band Power GaAs FET

File Size 86.42K  /  4 Page

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    FLC157XP

Eudyna Devices Inc
Part No. FLC157XP
OCR Text ...DS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 9.6 and -1.0 mA respectively with gate resistance...8GHz Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 400mA VDS = 5V, IDS = 30mA IGS = -30A Min. 1...
Description GaAs FET & HEMT Chips

File Size 55.15K  /  4 Page

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    FRM5W232BS

Fujitsu, Ltd.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
Part No. FRM5W232BS
OCR Text 2.5Gb/s APD Receiver module in an industry standard mini-DIL package * High Sensitivity: -34 dBm (typ.) * High Differential Electrical Outpu...8GHz 2.5Gb/s, NRZ, PRBS=223-1, B.E.R.=10-10, Rext=-13dB, VR is set at optimum value Ta=25C Ta=-40 to...
Description Incorporates a 30 micron InGaAs Avalanche Photodiode 采用0微米铟镓砷雪崩光电二极管

File Size 111.13K  /  4 Page

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    Q62702-F1377 BFP180

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1377 BFP180
OCR Text ...r) at collector currents from 0.2 to 2.5mA fT = 7GHz * F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe han...8GHz VCE = Parameter 16 8V dB 3V G 16 G 12 5V 10 14 2V 8 12 6 10 1V 4 8 0.7V 3V ...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)
From old datasheet system

File Size 76.23K  /  8 Page

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    TB31356AFL

Toshiba Semiconductor
Part No. TB31356AFL
OCR Text ...mA(PLL1+PLL2+XIN) (Typ.) PLL1 : 2.7mA (PLL1+XIN) (Typ.) PLL2 : 1.1mA (PLL2+XIN) (Typ.) (XIN=0.1mA Typ.) Operating voltage : 2.4 to 3.3V Independent battery save supported Compact leadless package : QON16pin(0.65mm pitch) LPF 12 STB DATA CL...
Description 1.8GHz,600MHz DUAL-PLL FREQUENCY SYNTHESIZER

File Size 294.71K  /  10 Page

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    CFH800

Infineon Technologies A...
ETC
INFINEON[Infineon Technologies AG]
Part No. CFH800
OCR Text ...tions! Pin assignment: 1 = gate 2 = source 3 = drain 4 = source CFH800 ________________________________________________________________________________________________________ * * * ESD: Type Marking Ordering code (tape...
Description Typical Common Source S - Parameters

File Size 71.94K  /  7 Page

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    United Monolithic Semic...
UMS[United Monolithic Semiconductors]
Part No. CHA7010-99 CHA7010-99F_00 CHA7010 CHA7010-99F/00
OCR Text ... 30% Symbol F_op G_lin_1 G_lin_2 G_lin_T RL_in RL_out P_sat_1 P_sat_2 P_sat_T P_1dBc_1 P_1dBc_2 PAE_sat PAE_1dBc Vc Ic Vctr Zctr Top CHA...8GHz) Saturated output power (9.8 to 10.4GHz) Saturated output power variation versus temperature Ou...
Description X-band GaInP HBT High Power Amplifier

File Size 156.54K  /  7 Page

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    Q62702-F1490 BFR180W

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1490 BFR180W
OCR Text ...ollector currents from 0.2mA to 2.5mA * fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling pre...8GHz VCE = Parameter 15 dB 13 10V 5V 3V 2V G 15 14 G 12 11 10 13 12 11 10 9 8 1V ...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)
From old datasheet system

File Size 56.55K  /  7 Page

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For 2-8ghz Found Datasheets File :: 1203    Search Time::5.422ms    
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