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  2 4-channel Datasheet PDF File

For 2 4-channel Found Datasheets File :: 120460    Search Time::1.89ms    
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    FS5UMH-2

Powerex, Inc.
Powerex Power Semiconductors
Part No. FS5UMH-2
OCR Text 2 HIGH-SPEED SWITCHING USE FS5UMH-2 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 f 3.6 3.8MAX. 1.0 12.5MIN. 0.8 D 0.5 4.5MAX. 2.54 2.54 2.6 qwe wr 2.5V DRIVE VDSS ........
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE 5 A, 100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220

File Size 45.21K  /  4 Page

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    FS50UMJ-2

Mitsubishi Electric Semiconductor
Part No. FS50UMJ-2
OCR Text 2 HIGH-SPEED SWITCHING USE FS50UMJ-2 OUTLINE DRAWING 10.5MAX. r Dimensions in mm 4.5 1.3 3.2 16 12.5MIN. 3.8MAX. 1.0 7.0 f 3.6 0.8 D 0.5 2.6 2.54 2.54 qwe wr q GATE w DRAIN e SOURCE r DRAIN ...
Description HIGH-SPEED SWITCHING USE

File Size 39.81K  /  4 Page

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    FS50UM-2

Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS50UM-2
OCR Text 2 HIGH-SPEED SWITCHING USE FS50UM-2 OUTLINE DRAWING 10.5MAX. r Dimensions in mm 4.5 1.3 3.2 16 12.5MIN. 3.8MAX. 1.0 7.0 f 3.6 0.8 D 0.5 2.6 2.54 2.54 qwe wr q GATE w DRAIN e SOURCE r DRAIN...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 43.97K  /  4 Page

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    FS50UM-2

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS50UM-2
OCR Text 2 HIGH-SPEED SWITCHING USE FS50UM-2 OUTLINE DRAWING 10.5MAX. r Dimensions in mm 4.5 1.3 3.2 16 12.5MIN. 3.8MAX. 1.0 7.0 f 3.6 0.8 D 0.5 2.6 2.54 2.54 qwe wr q GATE w DRAIN e SOURCE r DRAIN...
Description HIGH-SPEED SWITCHING USE

File Size 38.95K  /  4 Page

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    FLL400IP-2

Eudyna Devices Inc
Part No. FLL400IP-2
OCR Text 2 L-Band Medium & High Power GaAs FET FEATURES * * * * * Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 44% (Typ.) Broad ...4 and -17.4 mA respectively with gate resistance of 25. 3. The operating channel temperature (Tch) s...
Description L-Band Medium & High Power GaAs FET

File Size 109.97K  /  4 Page

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    FX50KMJ-2-A8

Renesas Electronics Corporation
Part No. FX50KMJ-2-A8
OCR Text 2 High-Speed Switching Use Pch Power MOS FET REJ03G1452-0200 (Previous: MEJ02G0284-0101) Rev.2.00 Aug 07, 2006 Features * * * * * * Drive voltage : 4 V VDSS : -100 V rDS(ON) (max) : 50 m ID : -50 A Integrated Fast Recovery Diode (TYP....
Description High-Speed Switching Use Pch Power MOS FET

File Size 169.04K  /  7 Page

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    FS50KMJ-2-A8

Renesas Electronics Corporation
Part No. FS50KMJ-2-A8
OCR Text 2 High-Speed Switching Use Nch Power MOS FET REJ03G1420-0200 (Previous: MEJ02G0067-0101) Rev.2.00 Aug 07, 2006 Features * * * * * * Drive voltage : 4 V VDSS : 100 V rDS(ON) (max) : 48 m ID : 50 A Integrated Fast Recovery Diode (TYP.) ...
Description High-Speed Switching Use Nch Power MOS FET

File Size 167.68K  /  7 Page

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    SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Part No. FLL400IP-2
OCR Text ... dss v gso - 6000 - -1216 -1.0 -2.0 -3.5 -5 - - 44.5 45.5 - 9.0 10.0 - - 44 - - 1.0 1.4 v ds = 5v, v gs =0v v ds = 5v, i ds =7.2a v ds = 5v, i ds =720ma i gs = -720 a channel to case v ds = 12v f=1.96ghz i ds = 2a v ds = 10v f=1.96g...
Description L-Band Medium & High Power GaAs FET

File Size 106.22K  /  4 Page

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    FS30ASJ-2-T13

Renesas Electronics Corporation
Part No. FS30ASJ-2-T13
OCR Text 2 High-Speed Switching Use Nch Power MOS FET REJ03G1412-0200 (Previous: MEJ02G0064-0101) Rev.2.00 Aug 07, 2006 Features * * * * * Drive voltage : 4 V VDSS : 100 V rDS(ON) (max) : 84 m ID : 30 A Integrated Fast Recovery Diode (TYP.) : ...
Description High-Speed Switching Use Nch Power MOS FET

File Size 165.98K  /  7 Page

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    FS50SMJ-2

Mitsubishi Electric Semiconductor
Part No. FS50SMJ-2
OCR Text 2 HIGH-SPEED SWITCHING USE FS50SMJ-2 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 f 3.2 2 2 19.5MIN. 4 20.0 4.4 G 0.6 2.8 1.0 q 5.45 w e 5.45 4 wr 4V DRIVE VDSS ..........................
Description HIGH-SPEED SWITCHING USE

File Size 41.01K  /  4 Page

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For 2 4-channel Found Datasheets File :: 120460    Search Time::1.89ms    
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