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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOT4S60
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| OCR Text |
16a r ds(on),max 0.9 w q g,typ 6nc e oss @ 400v 1.5 m j symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode re...600v, v gs =0v v ds =5v,i d =250 m a v ds =480v, t j =150c zero gate voltage drain current body diod... |
| Description |
600v 4A a MOS TM Power Transistor
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| File Size |
624.47K /
6 Page |
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it Online |
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GE Security, Inc.
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| Part No. |
FESF16HT FESF16GT
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| OCR Text |
...nstantaneous forward voltage at 16a v f 0.975 1.3 1.5 volts maximum dc reverse current t c =25c 10.0 at rated dc blocking voltage t c =100c ...600v 50-400v 500-600v fig. 3 - typical reverse characteristics t j =100c instantaneous reverse leaka... |
| Description |
Fast Efficient Plastic Rectifier(快速效应塑胶整流器) 快速高效的塑料整流器(快速效应塑胶整流器
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| File Size |
145.23K /
2 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SKP06N60 SKB06N60 Q67040-S4230 Q67040-S4231
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| OCR Text |
...racteristics (Tj = 150C)
18A 16a
Tj=+25C -55C +150C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
20A
4.0V
3.5V
IC = 1...600v, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector cur... |
| Description |
Fast S-IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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| File Size |
266.40K /
13 Page |
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it Online |
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