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  131 072-word Datasheet PDF File

For 131 072-word Found Datasheets File :: 525    Search Time::1.484ms    
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    IDT
Part No. IDT72V36110
OCR Text 131,072 x 36 IDT72V36100 IDT72V36110 FEATURES: * * * * * * * * * * * * Choose among the following memory organizations: IDT72V36100 65,536 x 36 IDT72V36110 131,072 x 36 Higher density, 2Meg and 4Meg SuperSync II FIFOs Up t...
Description 3.3 VOLT HIGH-DENSITY SUPERSYNC II? 36-BIT FIFO

File Size 442.15K  /  47 Page

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    OKI[OKI electronic componets]
Part No. MSM5432128 MSM5432126 MSM5432126_8
OCR Text ...ec. 1996 Pr el im in ar y 131,072-word 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO The MSM5432126/8 is a new generation Graphics DRAM organized in a 131,072-word 32-bit configuration. The technology used to fabricate the MS...
Description 131072-word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
131,072-word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
From old datasheet system

File Size 289.54K  /  24 Page

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    OKI
Part No. MSM54V24632A
OCR Text 131,072-word 32-Bit 2-Bank SGRAM without Graphics Functions MSM54V24632A 11 Feb. 1998 DESCRIPTION The MSM54V24632A is a synchronous graphics random access memory without graphics oriented functions; Block Write, Write per bit, Sing...
Description 131,072-word x 32-Bit x 2-Bank SGRAM without Graphics Functions
From old datasheet system

File Size 474.67K  /  29 Page

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    Galvantech
Part No. GVT73128A16 73128A16
OCR Text ...e GVT73128A16 is organized as a 131,072 x 16 SRAM using a four-transistor memory cell with a high performance, silicon gate, low-power CMOS process. Galvantech SRAMs are fabricated using triple-layer polysilicon, double-layer metal technolo...
Description REVOLUTIONARY PINOUT 128K X 16
From old datasheet system

File Size 79.97K  /  11 Page

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    Electronic Theatre Controls, Inc.
Galvantech
Part No. GVT73128S24 GVT73128A24 73128A24 GVT73128S24T-12I GVT73128S24T-9I GVT73128S24T-15I GVT73128S24T-10I
OCR Text ... GVT73128S24 are organized as a 131,072 x 24 SRAM using a four-transistor memory cell with a high performance, silicon gate, low-power CMOS process. Galvantech SRAMs are fabricated using triple-layer polysilicon, double-layer metal technolo...
Description x24 SRAM x24的SRAM
From old datasheet system
128K X 24 ASYNCHRONOUS SRAM

File Size 59.87K  /  14 Page

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    HX6228TVHC HX6228TVRT HX6228 HX6228ABFC HX6228ABFT HX6228ABHC HX6228ABHT HX6228ABNC HX6228ABNT HX6228ABRC HX6228ABRT HX6

Honeywell Solid State Electronics Center
Honeywell International Inc.
Honeywell International, Inc.
Honeywell Solid State Elect...
Part No. HX6228TVHC HX6228TVRT HX6228 HX6228ABFC HX6228ABFT HX6228ABHC HX6228ABHT HX6228ABNC HX6228ABNT HX6228ABRC HX6228ABRT HX6228AEFC HX6228AEFT HX6228AEHC HX6228AEHT HX6228AENC HX6228AENT HX6228AERC HX6228AERT HX6228AQFC HX6228AQFT HX6228AQHC HX6228AQHT HX6228AQNC HX6228AQNT HX6228AQRC HX6228AQRT HX6228ASFC HX6228ASFT HX6228ASHC HX6228ASHT HX6228ASNC HX6228ASNT HX6228ASRC HX6228ASRT HX6228AVFC HX6228AVFT HX6228AVHC HX6228AVHT HX6228AVNC HX6228AVNT HX6228AVRC HX6228AVRT HX6228KBFC HX6228KBFT HX6228KBHC HX6228KBHT HX6228KBNC HX6228KBNT HX6228KBRC HX6228KBRT HX6228KEFC HX6228KEFT HX6228KEHC HX6228KEHT HX6228KENC HX6228KERC HX6228KERT HX6228KQFC HX6228KQFT HX6228KQHC HX6228KQHT HX6228KQNC HX6228KQNT HX6228KQRC HX6228KQRT HX6228KSFC HX6228KSFT HX6228KSHC HX6228KSHT HX6228KSNC HX6228KSNT HX6228KSRC HX6228KSRT HX6228KVFC HX6228KVFT HX6228KVHC HX6228KVHT HX6228KVNC HX6228KVNT HX6228KVRC HX6228KVRT HX6228TBFC HX6228TBFT HX6228TBHC HX6228TBHT HX6228TBNC HX6228TBNT HX6228TBRC HX6228TBRT HX6228TEFC HX6228TEFT HX6228TEHC HX6228TEHT HX6228TENC HX6228TENT HX6228TERC HX6228TERT HX6228TQFC HX6228TQFT HX6228TQHC HX6228TQHT HX6228TQNC HX6228TQNT HX6228TQRC HX6228TQRT HX6228TSFC HX6228TSFT HX6228TSHC HX622
OCR Text ...tatic RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell's radiation hardened technology, and is designed for use in systems operating in radiatio...
Description 128K x 8 STATIC RAM-SOI HX6228
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
ER 5C 3#12 2#8 PIN RECP
AB 7C 7#12 SKT PLUG
128K x 8 STATIC RAM-SOI HX6228 128K的8静态RAM的绝缘硅HX6228
ER 6C 3#12 3#0 PIN RECP 128K的8静态RAM的绝缘硅HX6228

File Size 149.92K  /  12 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM52V1001LL
OCR Text 131,072-word 8-Bit CMOS STATIC RAM This version: Jan. 1998 MSM52V1001LL Previous version: Aug. 1996 DESCRIPTION The MSM52V1001LL is a 131,072-word by 8-bit CMOS static RAM featuring 2.7 V to 3.6 V power supply operation and direct L...
Description 131,072-word ×8-Bit CMOS STATIC RAM(128k字位静态RAM)
From old datasheet system
131,072-word x 8-Bit CMOS STATIC RAM

File Size 156.33K  /  11 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM52V1001LP
OCR Text 131,072-word 8-Bit CMOS STATIC RAM This version: Jan. 1998 MSM52V1001LP Previous version: Aug. 1996 DESCRIPTION The MSM52V1001LP is a 131,072-word by 8-bit CMOS static RAM featuring 3.0 V to 3.6 V power supply operation in the range...
Description 131,072-word ×8-Bit CMOS STATIC RAM(128k字位静态RAM) 131,072词8位的CMOS静态RAM28K的字× 8位静态RAM)的
From old datasheet system
131,072-word x 8-Bit CMOS STATIC RAM

File Size 156.58K  /  11 Page

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    OKI
Part No. MSM52V1001L
OCR Text 131,072-word 8-Bit CMOS STATIC RAM This version: Jan. 1998 MSM52V1001L Previous version: Aug. 1996 DESCRIPTION The MSM52V1001L is a 131,072-word by 8-bit CMOS static RAM featuring 2.7 V to 3.6 V power supply operation and direct LVC...
Description 131,072-word x 8-Bit CMOS STATIC RAM
From old datasheet system

File Size 156.76K  /  11 Page

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    OKI
Part No. MSM5432126A
OCR Text ...5432126A Pr el im in ar y 131,072-word 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO The MSM5432126A is a Graphics DRAM organized in a 131,072-word 32-bit configuration. The technology used to fabricate the MSM5432126A is OKI...
Description 131,072-word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
From old datasheet system

File Size 332.58K  /  24 Page

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