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  12-ns Datasheet PDF File

For 12-ns Found Datasheets File :: 181070    Search Time::1.969ms    
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    GSI Technology, Inc.
Part No. GS73024AB-12 GS73024AB-10
OCR Text 12/2005 1/12 ? 2003, gsi technology specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. features ? fast access time: 8, 10, 12 ns ? cmos low power operation: 250/200/170 ma ...
Description Asynchronous SRAM 128K X 24 STANDARD SRAM, 12 ns, PBGA119
Asynchronous SRAM 128K X 24 STANDARD SRAM, 10 ns, PBGA119

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    FK10UM-12

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FK10UM-12
OCR Text 12 HIGH-SPEED SWITCHING USE FK10UM-12 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 3.6 3.8MAX. 1...ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source breakdown voltage Gate-source lea...
Description Bench Power Supply; Output Current:28A; Calibrated:No; Features:Overload protection, high RFI stability, multiple DC output terminals, 1-yr. warranty, includes user manual; Line Regulation Constant Voltage: 2%, 5 mV
HIGH-SPEED SWITCHING USE

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    FCI
Hitachi,Ltd.
Part No. HM62W1400HTT-12 HM62W1400HLTT-12
OCR Text ... : 3.3 v 0.3 v access time 12/15 ns (max) completely static memory ? no clock or timing strobe required equal access and cycle times directly ttl compatible ? all inputs and outputs operating current: 180/160 ma (max) ttl ...
Description x1 SRAM x1的SRAM

File Size 88.99K  /  16 Page

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    FS2UM-12

Mitsubishi Electric Corporation
Powerex Power Semiconductors
Part No. FS2UM-12
OCR Text 12 HIGH-SPEED SWITCHING USE FS2UM-12 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 3.6 3.8MAX. 1....ns ns ns ns V C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakag...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 47.02K  /  4 Page

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    Accutek Microcircuit, Corp.
Part No. AK632256AWG-12
OCR Text ...iety of access time values from 12 nsec to 45 nsec in cmos or bicmos technology. the accutek module is designed to have a maximum seated hei...ns 8 = 8 ns 60 = 60 ns 10 = 10 ns 70 = 70 ns 12 = 12 ns 80 = 80 ns 15 = 15 ns 3.855 3.845 0.135 0.16...
Description 262,144 x 32 Bit CMOS/BiCMOS Static Random Access Memory 262,144 × 32位的CMOS / BiCMOS工艺静态随机存取存储器

File Size 102.54K  /  2 Page

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    ADADC80-Z-12

Analog Devices
Part No. ADADC80-Z-12
OCR Text 12-bit successive-approximation integrated circuit a/d converter information furnished by analog devices is believed to be accurate and reli...ns wide (min) (0 to 1 initiates conversion) logic loading 1 ttl load external clock 1 ttl load trans...
Description 12-Bit Successive Approximation Integrated Circuit A/D Converter

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    MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70PNS MBM29LV004TC-12PNS MBM29LV004TC-12PTN MBM29LV004TC-90PTR MBM29LV00

FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
Part No. MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70PNS MBM29LV004TC-12PNS MBM29LV004TC-12PTN MBM29LV004TC-90PTR MBM29LV004TC-70PTR MBM29LV004TC-90PTN MBM29LV004TC-12PTR MBM29LV004TC-70PTN MBM29LV004BC-70 MBM29LV004BC-12 MBM29LV004BC-12PNS MBM29LV004BC-12PTN MBM29LV004BC-12PTR MBM29LV004BC-70PNS MBM29LV004BC-70PTN MBM29LV004BC-70PTR MBM29LV004BC-90 MBM29LV004BC-90PNS MBM29LV004BC-90PTN MBM29LV004BC-90PTR
OCR Text 12 /mbm29lv004bc -70/-90/-12 n features ? single 3.0 v read, program, and erase minimizes system level power requirements ? compatible with ...ns maximum access time ? sector erase architecture one 16k byte, two 8k bytes, one 32k byte, and sev...
Description 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR
4M (512K X 8) BIT

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    FK7UM-12

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FK7UM-12
OCR Text 12 HIGH-SPEED SWITCHING USE FK7UM-12 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 3.6 3.8MAX. 1.0 ...ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source breakdown voltage Gate-source lea...
Description HIGH-SPEED SWITCHING USE

File Size 51.42K  /  5 Page

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    FS10UM-12

Mitsubishi Electric Semiconductor
Part No. FS10UM-12
OCR Text 12 HIGH-SPEED SWITCHING USE FS10UM-12 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 3.6 3.8MAX. 1...ns ns ns ns V C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakag...
Description HIGH-SPEED SWITCHING USE

File Size 42.21K  /  4 Page

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    FS2UM-12

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS2UM-12
OCR Text 12 HIGH-SPEED SWITCHING USE FS2UM-12 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 3.6 3.8MAX. 1....ns ns ns ns V C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakag...
Description HIGH-SPEED SWITCHING USE

File Size 41.88K  /  4 Page

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For 12-ns Found Datasheets File :: 181070    Search Time::1.969ms    
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