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  11800 Datasheet PDF File

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ... VDSS =100V G S RDS(on) = 0.11 ID = 17A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin...800 600 C oss 400 V G S , G ate-to-S ource V oltage (V ) V GS C iss C rs s C o ss = ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ...-2.0 -- 25 -- -25 -- 100 9.1 25 11 25 1.2 -- 1.6 -- 2.5 -- 3.5 -- 5.0 15 10 40 10 20 15 40 29 50 41 90 22 50 39 60 4.0 -- 6.0 -- 300 -- 280 ...800 Fig 4. Normalized On-Resistance Vs. Temperature 20 V GS , Gate-to-Source Voltage (V) V...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ... Units C/W www.irf.com 1 11/8/99 IRF7807D1 Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* Static Drain-S...800 Coss 2.0 400 Crss 0 1 10 100 0.0 0 2 4 6 8 10 12 VDS , Drain-to-Source Voltag...
Description MOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ... Units C/W www.irf.com 1 11/8/99 IRF7807D2 Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* Static Drain-S...800 2 400 Crss 0 1 10 100 0 0 4 8 12 VDS , Drain-to-Source Voltage (V) QG, Total ...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...-- --- --- Typ. --- --- --- --- 11 23 26 19 1018 155 8.0 1490 42 56 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to ...800 RG 20V tp D .U .T IA S + V - DD A 600 0 .0 1 Fig 12a. Unclamped Inductive...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...-- --- --- Typ. --- --- --- --- 11 23 26 19 1018 155 8.0 1490 42 56 Max. Units Conditions --- S VDS = 50V, ID = 4.8A 38 ID = 8.0A 9.0 nC VDS...800 RG 20V tp D .U .T IA S + V - DD A 600 0 .0 1 Fig 12a. Unclamped Inductive...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF9140

SEMELAB LTD
SEME-LAB[Seme LAB]
Part No. IRF9140
OCR Text ...5) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 -100V -18A 0.2 * SIMPLE DRIVE REQUIREMENTS * SCREENING OPTIONS AVAILABLE 1.09 (0.043) 0.97 (0.038) di...
Description P-CHANNEL POWER MOSFET

File Size 21.26K  /  2 Page

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ...unction temperature. ( See fig. 11 ) ISD 4.6A, di/dt 120A/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L = 6.6mH RG = 25, IAS =...800 V GS C is s C rs s C o ss = 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds +...
Description Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

File Size 103.18K  /  7 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...unction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2% Uses IRF9520N data and test conditions Starting TJ = 25C, L...800 -VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = ...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ...unction temperature. ( See fig. 11 ) ISD -4.0A, di/dt -300A/s, VDD V(BR)DSS, TJ 175C Starting TJ = 25C, L = 18 mH RG = 25, IAS...800 -VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = ...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

File Size 91.94K  /  8 Page

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