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  10v ms Datasheet PDF File

For 10v ms Found Datasheets File :: 14775    Search Time::1.813ms    
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    ZVP4424A ZVP4424ASTOA

Diodes Incorporated
Diodes, Inc.
Part No. ZVP4424A ZVP4424ASTOA
OCR Text ...0.75 -1.0 a v ds =-10 v, v gs =-10v static drain-source on-state resistance r ds(on) 7.1 8.8 9 11 w w v gs =-10v,i d =-200ma v gs =-3.5v,i d =-100ma forward transconductance (1) (2) g fs 125 ms v ds =-10v,i d =-0.2a input capacitance (2) c...
Description P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
200 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET TO-92 COMPATIBLE, E-LINE PACKAGE-3

File Size 107.84K  /  3 Page

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    FQPF5N90

FAIRCHILD[Fairchild Semiconductor]
Part No. FQPF5N90
OCR Text ...Drain Current [A] 4 VGS = 10v 10 0 2 150 25 Notes : 1. VGS = 0V 2. 250 Pulse Test s Note : TJ = 25 1 0 3 6 9 1...ms 10 0 ID, Drain Current [A] 3 ID, Drain Current [A] 100 s 1 ms 100 ms DC 2.5 2.0...
Description    900V N-Channel MOSFET

File Size 664.03K  /  8 Page

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    NXP Semiconductors N.V.
Part No. PSMN010-25YLC NXPSEMICONDUCTORSN.V.-PSMN010-25YLC
OCR Text ... drain current t mb =25c; v gs =10v; see figure 1 --39a p tot total power dissipation t mb =25c; see figure 2 --30w t j junction temperatu...ms) i al (a) (1) (2) 003aag232 10 -1 1 10 10 2 10 3 10 -1 1 10 10 2 v ds (v) i ...
Description N-channel 25 V 10.6 m logic level MOSFET in LFPAK using NextPower technology

File Size 210.75K  /  15 Page

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    ZVP4424G ZVP4424GTA

Diodes Incorporated
Part No. ZVP4424G ZVP4424GTA
OCR Text ...ent i d(on) -0.75 -1.0 a v ds =-10v, v gs =-10v static drain-source on-state resistance r ds(on) 7.1 8.8 9 11 w w v gs =-10v, i d =-200ma v...ms v ds =-10v,i d =-0.2a input capacitance (2) c iss 100 200 pf v ds =-25v, v gs =0v, f=1mhz common ...
Description SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
   SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

File Size 133.38K  /  3 Page

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    FQPF1N60

FAIRCHILD[Fairchild Semiconductor]
Part No. FQPF1N60
OCR Text ...erse Drain Current [A] VGS = 10v 10 0 15 10 150 25 Notes : 1. VGS = 0V 2. 250 Pulse Test s 5 Note : TJ = 25 0...ms 100 s 0.75 ID, Drain Current [A] 10 0 10 ms 100 ms DC ID, Drain Current [A] ...
Description 600V N-Channel MOSFET

File Size 540.21K  /  8 Page

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    HFU2N70S HFD2N70S

SemiHow Co.,Ltd.
Part No. HFU2N70S HFD2N70S
OCR Text ...r ds(on) : 5.0 (typ.) @v gs =10v ? 100% avalanche tested features absolute maximum ratings t c =25 unless otherwise specified 1....ms 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t ...
Description 700V N-Channel MOSFET

File Size 824.63K  /  8 Page

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    NXP Semiconductors N.V.
Part No. PSMN011-30YLC
OCR Text ... drain current t mb =25c; v gs =10v; see figure 1 --37a p tot total power dissipation t mb =25c; see figure 2 --29w t j junction temperatu...ms) i al (a) (1) (2) psmn011-30ylc all information provided in this document is subject to legal d...
Description N-channel 30 V 11.6 m logic level MOSFET in LFPAK using NextPower technology
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology

File Size 310.74K  /  15 Page

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    2SK1103

PANASONIC[Panasonic Semiconductor]
Part No. 2SK1103
OCR Text ... Yfs | RDS(on) Conditions VDS = 10v, VGS = 0 VGS = -30V, VDS = 0 IG = -10A, VDS = 0 VDS = 10v, ID = 10A VDS = 10v, ID = 1mA, f = 1kHz VDS = ...ms pF pF Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crs...
Description Silicon N-Channel Junction FET

File Size 30.75K  /  2 Page

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    2SK1104

PANASONIC[Panasonic Semiconductor]
Part No. 2SK1104
OCR Text ...| RDS(on) Coss Conditions VDS = 10v, VGS = 0 VGS = -30V, VDS = 0 IG = -10A, VDS = 0 VDS = 10v, ID = 10A VDS = 10v, ID = 1mA, f = 1kHz VDS = ...ms pF pF pF Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse tr...
Description Silicon N-Channel Junction FET

File Size 30.22K  /  2 Page

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For 10v ms Found Datasheets File :: 14775    Search Time::1.813ms    
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