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  105c- Datasheet PDF File

For 105c- Found Datasheets File :: 23394    Search Time::3.468ms    
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    VI-A11-CU VI-A33-CQ VI-A66-CQ VI-ANN-CQ VI-AWW-CU VI-IAM

Vicor, Corp.
DC/DC变换
VICOR[Vicor Corporation]
Part No. VI-A11-CU VI-A33-CQ VI-A66-CQ VI-ANN-CQ VI-AWW-CU VI-IAM
OCR Text ...ng Temp. (Baseplate) E -20C to +105C -10C to +100C C -40C to +105C -25C to +100C I -55C to +105C -40C to +100C M -65C to +105C -55C to +100C Product Highlights The Input Attenuator Module (VI-IAM) is a component-level, DC input front en...
Description Input Attenuator Modules 输入衰减器模

File Size 75.08K  /  2 Page

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    VI-AIM

VICOR[Vicor Corporation]
Part No. VI-AIM
OCR Text ...re (Baseplate) E-Grade -20C to +105C -10C to +100C C-Grade -40C to +105C -25C to +100C I-Grade -55C to +105C -40C to +100C M-Grade -65C to +105C -55C to +100C Mega Module packaging option VI-LAIM-E1 VI-LAIM-C1 VI-LAIM-I1 VI-LAIM-M1 Vi...
Description Universal AC Input Front End Module

File Size 48.32K  /  2 Page

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    VI-RAM VI-RAM-C1 VI-RAM-C2 VI-RAM-E1 VI-RAM-E2 VI-RAM-I1 VI-RAM-I2 VI-RAM-M1 VI-RAM-M2

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VICOR[Vicor Corporation]
Part No. VI-RAM VI-RAM-C1 VI-RAM-C2 VI-RAM-E1 VI-RAM-E2 VI-RAM-I1 VI-RAM-I2 VI-RAM-M1 VI-RAM-M2
OCR Text ...I-RAM-E2 Storage Temp. -20C to +105C Operating Temp. -10C to +100 (Baseplate) VI-RAM-C1 VI-RAM-I1 VI-RAM-C2 VI-RAM-I2 -40C to +105C -55C to +105C -25C to +100C -40C to +100C VI-RAM-M1 VI-RAM-M2 -65C to +105C -55C to +100C 12 1-800-735-62...
Description Ripple Attenuator Modules

File Size 100.96K  /  2 Page

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    60CTT015

VISHAY SEMICONDUCTORS
IRF[International Rectifier]
Part No. 60CTT015
OCR Text ...nditions 50% duty cycle @ TC = 105C, rectangular wave form Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied 5s Sine or 3s Rect. pulse TJ = 25 C, IAS = 2 Amps, L = 4.5 mH Current decaying linearly ...
Description 30 A, 15 V, SILICON, RECTIFIER DIODE, TO-220AB
TRENCH SCHOTTKY RECTIFIER
15V 60A Trench Schottky Discrete Diode in a TO-220 package

File Size 65.48K  /  5 Page

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    BTS550P

Siemens Semiconductor Group
Part No. BTS550P
OCR Text ...pecified by design. TJ is about 105C under these conditions. See timing diagram on page 13. Semiconductor Group Page 3 1998-Aug-31 Preliminary Data Sheet BTS550P Parameter and Conditions at Tj = -40 ... +150 C, Vbb = 12 V unle...
Description Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)
From old datasheet system

File Size 150.89K  /  15 Page

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    BTS555E3146 BTS555

INFINEON[Infineon Technologies AG]
Part No. BTS555E3146 BTS555
OCR Text ...cified by design 11) T is about 105C under these conditions. J 12) See timing diagram on page 14. 9) Infineon Technologies AG 3 2003-Oct-01 Data Sheet BTS555 Parameter and Conditions at Tj = -40 ... +150 C, Vbb = 12 V unless ...
Description Smart Highside High Current Power Switch

File Size 299.00K  /  16 Page

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    BTS555

SIEMENS AG
Siemens Semiconductor Group
Part No. BTS555
OCR Text ...pecified by design. TJ is about 105C under these conditions. See timing diagram on page 14. Semiconductor Group Page 3 1998-Jan-14 Target Data Sheet BTS555 Parameter and Conditions at Tj = -40 ... +150 C, Vbb = 12 V unless oth...
Description From old datasheet system
Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)

File Size 128.85K  /  15 Page

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    BTS650P BTS650-PE3180

Infineon
Siemens Semiconductor Group
Part No. BTS650P BTS650-PE3180
OCR Text ...fied by design. 11) TJ is about 105C under these conditions. 12) See timing diagram on page 14. ) Semiconductor Group Page 3 1998-Nov.-2 BTS650P Inverse Load Current Operation On-state resistance (Pins 1,2,6,7 to pin 4) VbIN = ...
Description From old datasheet system
Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)

File Size 187.12K  /  16 Page

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    BTS6510 BTS6510B

Infineon Technologies A...
Infineon Technologies AG
Part No. BTS6510 BTS6510B
OCR Text ...ified by design 11) TJ is about 105C under these conditions. 12) See timing diagram on page 13. ) Page 3 of 15 2003-Oct-01 Data Sheet BTS6510 Parameter and Conditions at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified ...
Description    Smart Highside High Current Power Switch
Smart High Side Switches - 6mOhm - Vbb(on) = 5V-34V - TO220 -7
Smart Power High Side Switches

File Size 260.53K  /  15 Page

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    BTX18 BTX18-100 BTX18-200 BTX18-300 BTX18-400 BTX18-500

List of Unclassifed Manufacturers
Comset Semiconductors
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. BTX18 BTX18-100 BTX18-200 BTX18-300 BTX18-400 BTX18-500
OCR Text ... Average on-state current TCASE=105C (averaged over any 20 TAMB=60C, in ms period) free air On-state Current (D.C.) TCASE=100C RMS on-state Current BTX18- BTX18- BTX18- BTX18- BTX18100 200 300 400 500 Max : 1.0 Max : 250 Max : 1.6 Max...
Description SILICON THYRISTORS
SWITCH DIP 8PST TOP SLIDE

File Size 106.36K  /  4 Page

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