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  10 20v Datasheet PDF File

For 10 20v Found Datasheets File :: 49126    Search Time::3.906ms    
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    http://
Part No. LP3879MR-1.0 LP3879MR-1.2 LP3879MRX-1.0 LP3879SDX-1.0
OCR Text ...own: the lp3879 draws less than 10 a quiescent current when shutdown pin is pulled low. precision output: guaranteed output voltage accuracy...20v n custom voltages available from 1.0v to 1.2v (50 mv increments) n input voltage: 2.5 to 6v n 1%...
Description Micropower 800mA Low Noise Ceramic Stable Voltage Regulator for Low Voltage Applications

File Size 699.52K  /  11 Page

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    SPP73N03S2L-10

Infineon Technologies AG
Part No. SPP73N03S2L-10
OCR Text 10 spb73n03s2l-10 optimos ? ? ? ? = == = power-transistor product summary v ds 30 v r ds ( on ) 8 m ? i d 73 a feature ? n-channel ? enhan...20v, v ds =0v i gss - 1 100 na drain-source on-state resistance v gs =4.5v, i d =36a r ds(on) - 1...
Description 73 A, 30 V, 0.0131 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220, 3 PIN

File Size 101.13K  /  8 Page

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    ST Microelectronics
Part No. SD2921-10
OCR Text 10 rf power transistors hf/vhf/uhf n-channel mosfets n gold metallization n excellent thermal stability n common source configuration n po...20v v ds = 0 v 5 m a v gs(q) v ds = 10v i d = 250 ma 2...
Description RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS

File Size 334.91K  /  10 Page

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    SPD30N03S2L-10

Infineon Technologies AG
Part No. SPD30N03S2L-10
OCR Text 10 OptiMOS(R) Power-Transistor Feature * N-Channel Product Summary VDS R DS(on) ID 30 10 30 P- TO252 -3-11 V m A * Enhancement m...20v, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=30A Drain-source on-state resista...
Description OptiMOS Power-Transistor
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LL

File Size 255.84K  /  8 Page

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    Wisdom technologies Int...
Part No. WFF2N60-10
OCR Text ...- 1 a vds=480v, tc=125 10 a igssf gate-body leakage current, forward vgs=+30v, vds=0v -- -- 100 na ? igssr gate-body lea...20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain curre...
Description 600V N-Channel MOSFET

File Size 1,498.59K  /  6 Page

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    Wisdom technologies Int...
Part No. WFF4N60-10
OCR Text ...rent vds=600v, vgs=0v -- -- 10 a vds=480v, tc=125 100 a igssf gate-body leakage current, forward vgs=+30v, vds=0v -- -- ...20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain curre...
Description 600V N-Channel MOSFET

File Size 1,435.65K  /  6 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPU30N03S2L-10
OCR Text 10 Feature N-Channel Logic Level Low on-resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 1...20v, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=30A Drain-source on-state resistan...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, IPAK, RDSon = 10.0mOhm, 30A, LL
OptiMOS Power-Transistor

File Size 544.13K  /  8 Page

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    Wisdom technologies Int...
Part No. WFP4N60-10
OCR Text ...rent vds=600v, vgs=0v -- -- 10 a vds=480v, tc=125 100 a igssf gate-body leakage current, forward vgs=+30v, vds=0v -- -- ...20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain curre...
Description 600V N-Channel MOSFET

File Size 1,419.73K  /  6 Page

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    SPD30N03S2L-10

INFINEON TECHNOLOGIES AG
Part No. SPD30N03S2L-10
OCR Text 10 m w i d 30 a feature n-channel enhancement mode logic level low on-resistance r ds(on) excellent gate charge x r ds(on) prod...20v, v ds =0v i gss - 1 100 na drain-source on-state resistance v gs =4.5v, i d =30a r ds(on) - 1...
Description 30 A, 30 V, 0.0146 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

File Size 644.67K  /  9 Page

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    ST Microelectronics
Part No. STW80NE06-10
OCR Text 10 n-channel 60v - 0.0085 w - 80a to-247 stripfet? power mosfet (1) i sd 80a, di/dt 300a/s, v dd v (br)dss , t j t jmax. (*) c...20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds...
Description N-CHANNEL 60V 0.0085 OHM 80A TO-247 STRIPFET POWER MOSFET

File Size 273.30K  /  8 Page

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