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http://
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| Part No. |
LP3879MR-1.0 LP3879MR-1.2 LP3879MRX-1.0 LP3879SDX-1.0
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| OCR Text |
...own: the lp3879 draws less than 10 a quiescent current when shutdown pin is pulled low. precision output: guaranteed output voltage accuracy...20v n custom voltages available from 1.0v to 1.2v (50 mv increments) n input voltage: 2.5 to 6v n 1%... |
| Description |
Micropower 800mA Low Noise Ceramic Stable Voltage Regulator for Low Voltage Applications
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| File Size |
699.52K /
11 Page |
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Infineon Technologies AG
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| Part No. |
SPP73N03S2L-10
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| OCR Text |
10 spb73n03s2l-10 optimos ? ? ? ? = == = power-transistor product summary v ds 30 v r ds ( on ) 8 m ? i d 73 a feature ? n-channel ? enhan...20v, v ds =0v i gss - 1 100 na drain-source on-state resistance v gs =4.5v, i d =36a r ds(on) - 1... |
| Description |
73 A, 30 V, 0.0131 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220, 3 PIN
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| File Size |
101.13K /
8 Page |
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it Online |
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ST Microelectronics
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| Part No. |
SD2921-10
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| OCR Text |
10 rf power transistors hf/vhf/uhf n-channel mosfets n gold metallization n excellent thermal stability n common source configuration n po...20v v ds = 0 v 5 m a v gs(q) v ds = 10v i d = 250 ma 2... |
| Description |
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS
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| File Size |
334.91K /
10 Page |
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it Online |
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Wisdom technologies Int...
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| Part No. |
WFF2N60-10
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| OCR Text |
...- 1 a vds=480v, tc=125 10 a igssf gate-body leakage current, forward vgs=+30v, vds=0v -- -- 100 na ? igssr gate-body lea...20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain curre... |
| Description |
600V N-Channel MOSFET
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| File Size |
1,498.59K /
6 Page |
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it Online |
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Wisdom technologies Int...
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| Part No. |
WFF4N60-10
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| OCR Text |
...rent vds=600v, vgs=0v -- -- 10 a vds=480v, tc=125 100 a igssf gate-body leakage current, forward vgs=+30v, vds=0v -- -- ...20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain curre... |
| Description |
600V N-Channel MOSFET
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| File Size |
1,435.65K /
6 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPU30N03S2L-10
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| OCR Text |
10
Feature
N-Channel Logic Level Low on-resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 1...20v, VDS=0V
Drain-source on-state resistance
VGS =4.5V, ID=30A
Drain-source on-state resistan... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, IPAK, RDSon = 10.0mOhm, 30A, LL OptiMOS Power-Transistor
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| File Size |
544.13K /
8 Page |
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it Online |
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Wisdom technologies Int...
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| Part No. |
WFP4N60-10
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| OCR Text |
...rent vds=600v, vgs=0v -- -- 10 a vds=480v, tc=125 100 a igssf gate-body leakage current, forward vgs=+30v, vds=0v -- -- ...20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain curre... |
| Description |
600V N-Channel MOSFET
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| File Size |
1,419.73K /
6 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW80NE06-10
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| OCR Text |
10 n-channel 60v - 0.0085 w - 80a to-247 stripfet? power mosfet (1) i sd 80a, di/dt 300a/s, v dd v (br)dss , t j t jmax. (*) c...20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds... |
| Description |
N-CHANNEL 60V 0.0085 OHM 80A TO-247 STRIPFET POWER MOSFET
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| File Size |
273.30K /
8 Page |
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it Online |
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Price and Availability
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