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1.6 2.5a Datasheet PDF File

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				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...GE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handli...6 180 -55 to 150 300 260 IRF235 250 250 6.5 4.1 26 20 75 0.6 180 -55 to 150 300 260 IRF236 275 275 8...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2805L IRF2805S
OCR Text	...conds Max. 135V 96V 700 200 1.3 20 380 1220 See Fig.12a, 12b, 15, 16 2.0 -55 to + 175 300 (1.6mm from case ) Units A W W/C V mJ A m...6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 ID , Drain-to-Source Current (A) 100 4.5V ID , Dr...
Description	55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
File Size	221.43K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3000
OCR Text	...@VGS = 10V VDSS 300V ID 1.6A l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitanc...6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C ...
Description	300V Single N-Channel HEXFET Power MOSFET in a SO-8 package SMPS MOSFET
File Size	119.33K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3315S IRF3315L
OCR Text	...50 12 9.4 2.5 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to...6 40 Units C/W 11/7/97 IRF3315S/L Electrical Characteristics @ TJ = 25C (unless otherwise...
Description	Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A) Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
File Size	193.12K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3315
OCR Text	...0 12 13.6 2.5 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.50...
Description	Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)
File Size	121.12K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text	...Typ. --- 0.50 --- --- Max. 1.73 --- 62 40 Units C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended fo...6.3 9.8 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C...
Description	20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条? TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 77A I(D) \| TO-263AB
File Size	123.62K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3708 IRF3708L IRF3708S
OCR Text	...Typ. --- 0.50 --- --- Max. 1.73 --- 62 40 Units C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended fo...6 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse ...
Description	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条） Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
File Size	137.00K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3717
OCR Text	... A D D D D ID 20A S S 1 2 3 4 8 7 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current S G 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS I...
Description	HEXFETPower MOSFET
File Size	246.14K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	...150 A 7.9 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-C...6.4 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.12 --- --- --- --- --- --...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7106 IRF7106TR
OCR Text	1 8 HEXFET (R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in T...6 4 5 RDS(on) 0.125 0.20 ID 3.0A -2.5a P-CHANNEL MOSFET Top View SO-8 Absolute ...
Description	20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
File Size	157.44K / 7 Page	View it Online	Download Datasheet

For 1.6 2.5a Found Datasheets File :: 52894 Search Time::2.766ms
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