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IDT
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| Part No. |
IDT71P71104 IDT71P71204
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| OCR Text |
..., and micron techno logy, inc. 1 18mb pipelined ddr?ii sram burst of 2 advance information idt71p71204 idt71p71104 idt71p71804 idt71p71604...2m x 8-bit), 71p71104 (2m x 9-bit), 71p71804 (1m x 18-bit) 71p71604 (512k x 36-bit) adv... |
| Description |
1.8V 2M x 9 DDR II Pipelined SRAM 1.8V 2M x 8 DDR II Pipelined SRAM
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| File Size |
612.62K /
24 Page |
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SHARP
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| Part No. |
LH28F020SU-N LH28F016SUN-N80
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| OCR Text |
1 lh28f020su-n 2m (256k 8) flash memory figure 1. tsop configuration 28f020sun80-1 top view 32-pin tsop 2 3 4 5 8 9 a 14 29 28 27 26
25 24 21 18 6 7 a 17 a 13 a 11 a 8 a 9 23 22 dq 4 10 11 12 31 30 ce 13 20 a 0 a 1 a 2 19 dq 5 dq 6 dq... |
| Description |
2M (256K x 8) Flash Memory LH28F016SUN-N80 2M (256K x 8) Flash Memory
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| File Size |
268.11K /
31 Page |
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SHARP
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| Part No. |
LH28F020SU-L LH28F016SUT-L15
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| OCR Text |
1 lh28f020su-l 2m (256k 8) flash memory features ? 256k 8 bit configuration ? 5 v write/erase (3.3 v v cc ) ? access time C for 3.3 v read: 150 ns ? minimum 2.7 v read capability C 180 ns maximum access time (v cc = 2.7 v) ? 16 independe... |
| Description |
2M (256K bb 8) Flash Memory LH28F016SUT-L15 2M (256K x 8) Flash Memory
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| File Size |
272.24K /
31 Page |
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Cypress Semiconductor, Corp.
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| Part No. |
CY7C1514KV18 CY7C1514KV18-300BZXC CY7C1512KV18-300BZXC CY7C1512KV18-300BZC CY7C1514KV18-300BZC CY7C1514KV18-250BZC CY7C1514KV18-250BZI CY7C1514KV18-250BZXC CY7C1514KV18-333BZC CY7C1514KV18-333BZI CY7C1514KV18-333BZXC CY7C1514KV18-333BZXI CY7C1514KV18-250BZXI CY7C1525KV18 CY7C1512KV18-350BZC
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| OCR Text |
...writes qdr ? ii operates with 1.5 cycl e read latency when doff is asserted high operates similar to qdr i device with 1 cycle read la...2m x 36 functional description the cy7c1510kv18, cy7c1525kv18, cy7c1512kv18, and cy7c1514kv18 are 1.... |
| Description |
72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
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| File Size |
603.26K /
33 Page |
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http:// Winbond Electronics, Corp. Winbond Electronics Corp
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| Part No. |
W986408CH-8H W986408CH-75 W986408CH
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| OCR Text |
1.0 publication release ...2m words x 4 banks x 8 bits. using pipelined architecture and 0.20um process technology, w986408ch d... |
| Description |
2M x 8BIT x 4 BANKS SDRAM x8 SDRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
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| File Size |
2,212.49K /
44 Page |
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Winbond Electronics, Corp. Winbond Electronics Corp
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| Part No. |
W981216AH-8H W981216AH-75 W981216AH
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| OCR Text |
1.0 publication release d...2m words x 4 banks x 16 bits. using pipelined architecture and 0.20um process technology, w981216ah ... |
| Description |
2M x 16 bit x 4 Banks SDRAM x16 SDRAM 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
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| File Size |
2,177.27K /
44 Page |
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GSI Technology, Inc.
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| Part No. |
GS864036GT-167I GS864036T-200 GS864018GT-167 GS864032T-300 GSITECHNOLOGY-GS864018T-200I
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| OCR Text |
...cial temp industrial temp rev: 1.00 9/2004 1/24 ? 2004, gsi technology specifications cited are subject to change without notice . for lat...2m x 32 top view dq b nc dq b dq b dq b dq a dq a dq a dq a nc dq c dq c dq c dq d dq d dq d nc dq c... |
| Description |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 36 CACHE SRAM, 8 ns, PQFP100 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 36 CACHE SRAM, 7.5 ns, PQFP100 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4M X 18 CACHE SRAM, 8 ns, PQFP100 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 5.5 ns, PQFP100
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| File Size |
601.91K /
24 Page |
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it Online |
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Price and Availability
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