0.9 1.9ghz pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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0.9 1.9ghz Datasheet PDF File

For 0.9 1.9ghz Found Datasheets File :: 873 Search Time::6.328ms
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				Sanyo
Part No.	2SC4404
OCR Text	...ions unit:mm 2059B [2SC4404] 0.425 0.3 3 0~0.1 Features * High cutoff frequency : fT=5.0GHz typ * High power gain : MAG=14dB typ (f=...9 0.6 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltag...
Description	NPN Epitaxial Planar Silicon Transistor UHF Local Oscillator, Wide-Band Amplifier Applications
File Size	112.71K / 5 Page	View it Online	Download Datasheet

				OKI electronic componet... OKI electronic componets OKI electronic eomponets
Part No.	KGF1531
OCR Text	...P PACKAGE DIMENSIONS 1.80.1 0.850.05 0.6 +0.1 -0.05 0.4 +0.1 -0.05 1.10.15 0.36 0.74 3.00.2 1.50.15 0.3 MIN 0 to 0.15 Pa...9 GHz, fLO = 1.65 GHz, PLO = 0 dBm 3/8 electronic components KGF1531 RF CHARACTERISTICS...
Description	Small-Signal Amplifier From old datasheet system
File Size	114.86K / 8 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor Maxim Integrated Products, Inc.
Part No.	MAX2016 MAX2016ETI MAX2016ETID MAX2016ETITD MAX2016ETI-T
OCR Text	0; 9/04 KIT ATION EVALU ABLE AVAIL LF-to-2.5GHz Dual Logarithmic Detector/ Controller for Power, Gain, and VSWR Measurements General Description The MAX2016 dual logarithmic detector/controller is a fully integrated system designed ...
Description	2.7 V to 5.25 V, LF-to-2.5 GHz dual logarithmic detector/controller for power, gain, and VSWR measurement LF-to-2.5GHz Dual Logarithmic Detector/ Controller for Power, Gain, and VSWR Measurements LF-to-2.5GHz Dual Logarithmic Detector/Controller for Power, Gain, and VSWR Measurements
File Size	398.91K / 19 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1490 BFR180W
OCR Text	...ger) at collector currents from 0.2mA to 2.5mA * fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe han...9 8 1V 9 8 0.7V 7 6 5 4 3 1V 0.7V 7 6 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0...
Description	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) From old datasheet system
File Size	56.55K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFS482 Q62702-F1573
OCR Text	...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...9 - IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f...
Description	NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.) From old datasheet system
File Size	53.54K / 6 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	SA620DK SA620
OCR Text	... compensation to vary less than 0.2dB over -40 to +85C temperature range. The wide-dynamic-range mixer has an 9dB noise figure and IP3 of -6...9 OSC2 10 APPLICATIONS * 900MHz cellular front-end * 900MHz cordless front-end * Spread spectr...
Description	Low voltage LNA mixer and VCO - 1GHz Low voltage LNA, mixer and VCO - 1GHz
File Size	330.13K / 11 Page	View it Online	Download Datasheet

				Sanyo
Part No.	2SC4405
OCR Text	...ions unit:mm 2059B [2SC4405] 0.425 0.3 3 0~0.1 0.15 Features * High cutoff frequency : fT=5.0GHz typ * High power gain : MAG=14dB ty...9 0.6 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltag...
Description	NPN Epitaxial Planar Silicon Transistor UHF, Low-Noise, Wide-Band Amplifier Applications
File Size	111.73K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFL48V1920
OCR Text	...r Pout = 60W (TYP.) @ f=1.9 - 2.0 GHz High power gain GLP = 11.5 dB (TYP.) @ f=1.9 - 2.0GHz High power added efficiency P.A.E. = 45 % (TYP.) @ f=1.9 - 2.0GHz 17.40.3 8.00.2 2 3.20.8 3 6.0 3 15.2 24.00.3 16.4 1....
Description	From old datasheet system 1.9-2.0GHz BAND 60W GaAs FET
File Size	324.67K / 6 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba Semiconductor
Part No.	TIM5964-35SLA-251
OCR Text	...m (Single Carrier Level) 45.0 8.0 -42 45.5 9.0 8.0 39 -45 8.0 9.0 0.8 9.0 100 add IM3 IDS2 dBc A Channel Temperature Rise Tch VDS X IDS X Rth(c-c) C Recommended gate resistance(Rg) : Rg=Rg1(10 )+Rg2(18 )= 28 ...
Description	MICROWAVE POWER GaAs FET TIM5964-35SLA-251 From old datasheet system
File Size	36.69K / 4 Page	View it Online	Download Datasheet

				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	TIM5964-4UL TIM4450-4UL
OCR Text	... UNIT MIN. TYP. MAX. dBm 35.5 9.0 -44 36.5 10.0 1.1 37 -47 1.1 1.3 0.6 1.3 80 f = 5.9 - 6.4GHz add IM3 dBc A C VDS X IDS X Rth(c-c) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-o...
Description	MICROWAVE POWER GaAs FET From old datasheet system
File Size	68.69K / 4 Page	View it Online	Download Datasheet

For 0.9 1.9ghz Found Datasheets File :: 873 Search Time::6.328ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |