0.6 1.0 1.4 1.8ghz pdf Datasheet P13 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : STATE TF155B AOD480 1ZC110A 3EZ33D5 1000FXB 92110 SNC10505
	Product Description
	Full Text Search

0.6 1.0 1.4 1.8ghz Datasheet PDF File

For 0.6 1.0 1.4 1.8ghz Found Datasheets File :: 922 Search Time::9.515ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |

				Infineon Technologies A... ETC INFINEON[Infineon Technologies AG]
Part No.	CFH800
OCR Text	...CDMA and UMTS applications (F = 0.50dB; Ga = 17dB @ 3V; 30mA; f=1.8ghz) Low cost miniature package SOT343 LG = 0.4m; W G = 800m Tape and Ree...6.5 -2.0 160 150 -65...+150 350 Unit V V V mA C C mW RthChS 198 K/W Infineon Technolo...
Description	Typical Common Source S - Parameters
File Size	71.94K / 7 Page	View it Online	Download Datasheet

				United Monolithic Semic... UMS[United Monolithic Semiconductors]
Part No.	CHA7010-99 CHA7010-99F_00 CHA7010 CHA7010-99F/00
OCR Text	...ated n Chip size: 4.74 x 4.36 x 0.1 mm Vctr Vc Input Matching Network Inter-stage Output Combiner Vctr Vc Vctr Vc...6 39 38 Typ 9.4 16 18 -0.035 12 12 40 39 -0.01 39 38 35 32 9 2.4 5.5 350 Max 10.4 Unit GHz ...
Description	X-band GaInP HBT High Power Amplifier
File Size	156.54K / 7 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1490 BFR180W
OCR Text	...ger) at collector currents from 0.2mA to 2.5mA * fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe han...6 13.5 10.5 - IC = 1 mA, VCE = 5 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = \|S21/S12\| Se...
Description	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) From old datasheet system
File Size	56.55K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFS482 Q62702-F1573
OCR Text	...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...6 8 0.3 0.12 0.65 - GHz pF 0.45 dB 1.2 1.9 - IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-bas...
Description	NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.) From old datasheet system
File Size	53.54K / 6 Page	View it Online	Download Datasheet

				Sanyo Semicon Device Sanyo Electric Co., Ltd.
Part No.	EC3H04C 1224
OCR Text	...ons unit : mm 2184 [EC3H04C] 0.5 0.3 0.05 0.6 Low noise : NF=1.7dB typ (f=2GHz). Hige cut-off frequency : fT=8GHz typ (VCE=1V). Low operating voltage. Ultraminiature (1008 size) and thin (0.6mm) leadless package. 0.2 0.05 0.2 ...
Description	NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier and OSC Applications From old datasheet system High-Frequency Low-Noise Amplifier and OSC Applications 高频低噪声放大器和OSC应用
File Size	33.74K / 6 Page	View it Online	Download Datasheet

				MAXIM[Maxim Integrated Products]
Part No.	MAX2645EVKIT MAX2645_1 MAX2645 MAX26451
OCR Text	0; 7/00 MAX2645 Evaluation Kit General Description The MAX2645 evaluation kit (EV kit) simplifies evaluation of the MAX2645 3.4GHz to 3...6. MAX2645 EV Kit PC Board Layout--Solder Side Maxim cannot assume responsibility for use of any ...
Description	Evaluation Kit for the MAX2645 From old datasheet system
File Size	228.46K / 4 Page	View it Online	Download Datasheet

				Maxim
Part No.	MAX2645
OCR Text	0; 7/00 L MANUA ION KIT ALUAT DATA SHEET EV WS FOLLO 3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/PA Predriver Features o 3.4GHz to 3.8...6/16 2.6/16 IIP3 (dBm) +4/+13 +10/+15.5 +11.8/+16.2 LOGIC INPUTS GAIN STEP SHUTDOWN RBIAS ...
Description	3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/ PA Predriver From old datasheet system
File Size	263.98K / 12 Page	View it Online	Download Datasheet

				Maxim Integrated Products, Inc. Maixm
Part No.	MAX3866 MAX3866E_D MAX3866E/D
OCR Text	...ied for a source capacitance of 0.5pF. When the MAX3866 is used with the PIN photodetector, sensitivities better than -22dBm can be achieved...6: Note 7: tr, tf PWD SYMBOL BW IIN NIN fL PSRR f 2MHz, 100mVp-p Electrical (Note 4), low LOP asser...
Description	2.5Gbps, 3.3V Combined Transimpedance/Limiting Amplifier
File Size	198.65K / 12 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	SA620DK SA620
OCR Text	... compensation to vary less than 0.2dB over -40 to +85C temperature range. The wide-dynamic-range mixer has an 9dB noise figure and IP3 of -6...6 MIXER PWRDN OSC PWRDN 7 8 * Internal VCO automatic leveling loop * Monotonic VCO frequency vs c...
Description	Low voltage LNA mixer and VCO - 1GHz Low voltage LNA, mixer and VCO - 1GHz
File Size	330.13K / 11 Page	View it Online	Download Datasheet

				MICREL[Micrel Semiconductor]
Part No.	SY100EL31Z SY10EL31 SY10EL31ZC SY10EL31ZCTR SY100EL31ZCTR SY100EL31ZC
OCR Text	...tion. Rev.: E Amendment: /0 1 Issue Date: August, 1998 Micrel SY10EL31 SY100EL31 DC ELECTRICAL CHARACTERISTICS VEE = VEE (Min.) to VEE (Max.); VCC = GND TA = -40C Symbol IEE Parameter Power Supply Current 10EL 100EL P...
Description	D FLIP-FLOP WITH SET AND RESET
File Size	47.38K / 4 Page	View it Online	Download Datasheet

For 0.6 1.0 1.4 1.8ghz Found Datasheets File :: 922 Search Time::9.515ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |

▲Up To Search▲

Price and Availability