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Ruichips Semiconductor Co., Ltd
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| Part No. |
RU1H35S
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| OCR Text |
...lanche energy, single pulsed 22 0 m j ? 100 v/ 40 a, r ds ( on ) = 21 m ( tpy.)@ v gs =10v ? super high dense cell design ? 100% avalanc...35s electrical characteristics ( t a =25 c unless otherwise noted) ru1h 35 s symbol parameter test... |
| Description |
N-Channel Advanced Power MOSFET
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| File Size |
366.49K /
9 Page |
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it Online |
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TOSHIBA
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| Part No. |
MG100J1ZS40
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| OCR Text |
...pedance high spee : t f = 0.35s (max) t rr = 0.15s (max) low saturation voltage : v ce (sat) = 3.5v (max) enhancement-mode the electrodes are isolated from case. equivalent circuit maximum ratings ... |
| Description |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
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| File Size |
193.97K /
6 Page |
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it Online |
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TOSHIBA
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| Part No. |
2SD2500
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| OCR Text |
...max.) high speed : t f = 0.35s (typ.) collector metal (fin) is fully covered with mold resin. maximum ratings (tc = 25c) characteristic symbol rating unit collector ? base voltage v cbo 1500 v collector ? emitter volta... |
| Description |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV
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| File Size |
159.54K /
4 Page |
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it Online |
Download Datasheet
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Price and Availability
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