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  0.0064 Datasheet PDF File

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    2SD2537

Rohm
Part No. 2SD2537
OCR Text ...uration voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) External dimensions (Unit : mm) 2SD2537 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 0.5 (3) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage C...
Description
File Size 64.84K  /  4 Page

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    2SD2648

Sanyo Semicon Device
Part No. 2SD2648
OCR Text ... unit : mm 2174A [2SD2648] 16.0 5.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 ...
Description Color TV Horizontal Deflection Output Applications

File Size 28.98K  /  4 Page

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    2SH20

Hitachi,Ltd.
Hitachi Semiconductor
Part No. 2SH20
OCR Text ... conditions V IC = 100 A, VGE = 0 VCE = 600 V, VGE = 0 VGE = 20 V, VCE = 0 -------------------------------------------------------------------------------------- ---------------------------------------------------------------------------...
Description    Silicon N-Channel IGBT
Silicon N-Channel IGBT 硅N沟道IGBT
IGBTs

File Size 42.64K  /  8 Page

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    2SH22

Hitachi,Ltd.
Hitachi Semiconductor
Part No. 2SH22
OCR Text ... conditions V IC = 100 A, VGE = 0 VCE = 600 V, VGE = 0 VGE = 20 V, VCE = 0 -------------------------------------------------------------------------------------- ---------------------------------------------------------------------------...
Description Silicon N-Channel IGBT
IGBTs

File Size 41.59K  /  8 Page

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    2SH27

Hitachi Semiconductor
Hitachi,Ltd.
Part No. 2SH27
OCR Text ... Symbol I CES I GES Min -- -- 6.0 -- -- -- -- -- -- Typ -- -- -- 2.1 920 150 220 300 410 Max 100 1 8.0 2.6 -- -- -- 600 820 Unit A A V V pF ns ns ns ns Test Conditions VCE = 600V, VGE = 0 VGE = 20 V, VCE = 0 I C = 15mA, VCE = 10V I C = 15A...
Description IGBTs
Silicon N Channel IGBT High Speed Power Switching

File Size 41.87K  /  8 Page

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    2SH29

Hitachi Semiconductor
Hitachi,Ltd.
Part No. 2SH29
OCR Text ... Symbol I CES I GES Min -- -- 6.0 -- -- -- -- -- -- Typ -- -- -- 2.1 1850 200 310 300 520 Max 100 1 8.0 2.6 -- -- -- 600 1040 Unit A A V V pF ns ns ns ns Test Conditions VCE = 600V, VGE = 0 VGE = 20 V, VCE = 0 I C = 30 mA, VCE = 10V I C = ...
Description IGBTs
Silicon N Channel IGBT High Speed Power Switching

File Size 42.53K  /  8 Page

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    2SK1809

Hitachi Semiconductor
Part No. 2SK1809
OCR Text ...BR)GSS I GSS Min 600 30 -- -- 2.0 -- 3.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 1.1 5.0 1000 250 45 12 45 105 55 0.9 500 Max -- -- 10 250 3.0 1.5 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 5 A, VG...
Description Silicon N Channel MOS FET
Silicon N-Channel MOS FET

File Size 32.02K  /  6 Page

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    2SK2109 D11229EJ2V0DS00

NEC[NEC]
Part No. 2SK2109 D11229EJ2V0DS00
OCR Text ...ACKAGE DIMENSIONS (in mm) 4.5 0.1 1.6 0.2 2.5 0.1 4.0 0.25 1.5 0.1 0.8 MIN. S 0.42 0.06 D G FEATURES * Low ON resistance RDS(on) = 1.0 MAX. @VGS = 4.0 V, ID = 0.3 A * High switching speed ton + toff < 100 ns * Low...
Description N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
From old datasheet system
MOS Field Effect Transistor

File Size 55.52K  /  6 Page

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    2SK2969

Sanyo Semicon Device
Toshiba Semiconductor
Part No. 2SK2969
OCR Text ...ions unit:mm 2091A [2SK2969] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC...
Description N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 171.38K  /  4 Page

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    SANYO
Part No. 2SK3292
OCR Text ...062A [2SK3292] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (P...
Description N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 39.65K  /  5 Page

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