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  0.0048 Datasheet PDF File

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    2SK3033

Panasonic Semiconductor
Part No. 2SK3033
OCR Text ....10.2 8.00.2 Solder Dip 13.7-0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.00.3 3.00.2 s Applications +0.5 1.20.15 1.450.15 0.750.1...
Description Silicon N-Channel Power F-MOS FET

File Size 23.46K  /  1 Page

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    2SK3034 2SK3033

PANASONIC[Panasonic Semiconductor]
Part No. 2SK3034 2SK3033
OCR Text ....10.2 8.00.2 Solder Dip 13.7-0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.00.3 3.00.2 s Applications +0.5 1.20.15 1.450.15 0.750.1...
Description Silicon N-Channel Power F-MOS FET

File Size 23.46K  /  1 Page

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    2SK3035 2SK3035TENTATIVE

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SK3035 2SK3035TENTATIVE
OCR Text ...m 6.50.1 5.30.1 4.350.1 2.30.1 0.50.1 s Applications 2.50.1 0.8max 0.930.1 1.00.1 0.10.05 0.50.1 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC P...
Description Silicon N-Channel Power F-MOS FET

File Size 23.05K  /  1 Page

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    2SK3036

PANASONIC[Panasonic Semiconductor]
Part No. 2SK3036
OCR Text ...m 6.50.1 5.30.1 4.350.1 2.30.1 0.50.1 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 7.30.1 1.80.1 2.50.1 0.8max 0.930.1 1...
Description Silicon N-Channel Power F-MOS FET

File Size 23.00K  /  1 Page

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    2SK3037 2SK3037TENTATIVE

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SK3037 2SK3037TENTATIVE
OCR Text ...m 6.50.1 5.30.1 4.350.1 2.30.1 0.50.1 s Applications 2.50.1 0.8max 0.930.1 1.00.1 0.10.05 0.50.1 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC P...
Description Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Silicon N-Channel Power F-MOS FET

File Size 23.07K  /  1 Page

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    2SK3107 D13802EJ2V0DS00

NEC
Part No. 2SK3107 D13802EJ2V0DS00
OCR Text ...tics, and is suitable for 1.6 0.1 PACKAGE DRAWING (Unit : mm) 0.3 0.05 0.1 +0.1 -0.05 0.8 0.1 use as a high-speed switching device in digital circuits. D 0 to 0.1 G S 0.2 0.5 +0.1 -0 FEATURES * Can be driven by a 2.5-V...
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
From old datasheet system

File Size 48.97K  /  8 Page

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    2SK3108 D13331EJ1V0DS00

NEC[NEC]
Part No. 2SK3108 D13331EJ1V0DS00
OCR Text ...w on-state resistance RDS(on) = 0.4 MAX. (VGS = 10 V, ID = 4.0 A) *Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V) *Avalanche capability rated *Built-in gate protection diode *Isolated TO-220 package ABSOLUTE MAXIMUM RA...
Description SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
From old datasheet system
MOS Field Effect Transistor

File Size 65.98K  /  8 Page

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    2SK3160

HITACHI[Hitachi Semiconductor]
Part No. 2SK3160
OCR Text ... Item Symbol Min 200 20 -- -- 1.0 -- -- 8 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 130 150 13 1100 365 185 15 75 280 110 0.85 100 Max -- -- 10 10 2.5 170 190 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns ...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 50.53K  /  9 Page

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    2SK3175A

HITACHI[Hitachi Semiconductor]
Part No. 2SK3175A
OCR Text ...fficiency P1dB = 110 W, PG = 16.0 dB, D = 60 % (at P1dB) typ. (f = 860MHz) * Compact package Outline RFPAK-G 3 D 2 G 1 1. Drain 2. Source 3. Gate S This Device is sensitive to Electro Static Discharge. An Adequate handling proc...
Description Silicon N Channel MOS FET UHF Power Amplifier
From old datasheet system

File Size 74.36K  /  8 Page

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    2SK3521 2SK3521-01SJ 2SK3521-01S 2SK3521-01L

FUJI[Fuji Electric]
Fuji Electric Holdings Co., Ltd.
Part No. 2SK3521 2SK3521-01SJ 2SK3521-01S 2SK3521-01L
OCR Text ...A/s Tch=25C Tch=25C Tch=125C 10 0.65 7 750 100 4.0 14 9 24 6 20 8.5 5.5 1.00 0.65 3.5 Min. 500 3.0 Typ. Max. 5.0 25 250 100 0.85 1130 150 6.0 21 14 36 9 30 13 8.5 1.50 Units V V A nA S pF 3.5 ns nC 8 A V s C ...
Description    N-CHANNEL SILICON POWER MOSFET
From old datasheet system
N-CHANNEL SILICON POWER MOSFET 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 118.90K  /  4 Page

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