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  -75a Datasheet PDF File

For -75a Found Datasheets File :: 4367    Search Time::0.843ms    
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    PP75T060

Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
Part No. PP75T060
OCR Text 75A / 600V TM 3 phase IGBT Assembly Description: The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase inverter for motor control, power supply...
Description POW-R-PAK 75A / 600V 3 phase IGBT Assembly

File Size 358.88K  /  6 Page

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    MWI75-06A7

IXYS Corporation
Part No. MWI75-06A7
OCR Text ...125 c v ce = 300v i c = 75a v ce v i c v ce a i c v q g -di/dt v v ge i rm t rr a/ m s mwi7506a7 t vj = 125 c v r = 300v i f = 60a i rm t rr 9v 11v v ge = 17v 15v 13v a 9v 11v v ge = 17v 15v 13v a 4 6 8 10 12 14 0 40 80 120 16...
Description IGBT Modules

File Size 166.52K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. CM75DU-24H
OCR Text ...ration voltage v ce(sat) i c = 75a, v ge = 15v, t j = 25 c C 2.9 3.7 volts i c = 75a, v ge = 15v, t j = 125 c C 2.85 C volts total gate charge q g v cc = 600v, i c = 75a, v ge = 15v C 280 C nc emitter-collector voltage* v ec i e ...
Description IGBT Modules:1200V

File Size 53.03K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. CM75DU-12H
OCR Text ...ration voltage v ce(sat) i c = 75a, v ge = 15v, t j = 25 c C 2.4 3.0 volts i c = 75a, v ge = 15v, t j = 125 c C 2.6 C volts total gate charge q g v cc = 300v, i c = 75a, v ge = 15v C 150 C nc emitter-collector voltage** v ec i e ...
Description IGBT Modules: 600V

File Size 54.55K  /  4 Page

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    APT75GP120JDF3

Advanced Power Technology
Part No. APT75GP120JDF3
OCR Text ... voltage (v ge = 15v, i c = 75a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 75a, t j = 125c) collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 1200v, v ge ...
Description MOSFET

File Size 203.84K  /  9 Page

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    PSMN5R0-100PS

NXP Semiconductors
Part No. PSMN5R0-100PS
OCR Text ...te-drain charge v gs =10v; i d =75a; v ds = 50 v; see figure 14 ; see figure 15 -49-nc q g(tot) total gate charge - 170 - nc avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy v gs =10v; t j(init) =25c; i d =...
Description N-channel MOSFET

File Size 284.39K  /  15 Page

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    PSMN5R0-100ES

NXP Semiconductors
Part No. PSMN5R0-100ES
OCR Text ...te-drain charge v gs =10v; i d =75a; v ds = 50 v; see figure 14 ; see figure 15 -49-nc q g(tot) total gate charge - 170 - nc avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy v gs =10v; t j(init) =25c; i d =...
Description N-channel MOSFET

File Size 277.96K  /  15 Page

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    SL Power Electronics
Part No. DMX-500 DMX-503-0512 DMX-504-1205 DMX-504-1212 DMX-504-1224 DMX-504-1512 DMX-504-1524
OCR Text ...utput #4 dmx-503-0512 500 +5v @ 75a +12v @ 8/12a pk -12v @ 4a dmx-504-1205 500 +5v @ 75a +12v @ 8/12a pk -12v @ 4a 5.2v @ 5a dmx-504-1212 500 +5v @ 75a +12v @ 8/12a pk -12v @ 4a 12v @ 5a dmx-504-1224 500 +5v @ 75a +12v @ 8/12a pk -12v @ 4a ...
Description 500 WATTS MULTIPLE OUTPUT 48 VDC INPUT, FORCED CURRENT SHARING

File Size 141.02K  /  2 Page

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    NXP Semiconductors N.V.
Part No. BUK7506-75B
OCR Text ... figure 1 ; see figure 3 [1] --75a p tot total power dissipation t mb = 25 c; see figure 2 --300w static characteristics r dson drain-source on-state resistance v gs =10v; i d =25a; t j =25c; see figure 11 ; see figure 12 -4.85.6m ?...
Description N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管

File Size 183.87K  /  13 Page

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