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BayLinear
ETC
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| Part No. |
B1587 B1587S-1.5 B1587S-2.5 B1587S-3.0 B1587S-3.3 B1587S-5 B1587S-ADJ B1587J-1.5 B1587J-2.5 B1587J-3.0 B1587J-3.3 B1587J-ADJ B1587J-5 B1587T-2.5 B1587T-ADJ B1587T-3.3 B1587D-1.5 B1587D-2.5 B1587D-5
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| OCR Text |
...ements and output voltage 1.5V, 2.5V, 3.0V, 3.3V, or 5V. The B1587 Outstanding features include full power usage up to 4.0Amp of load curren...4A, 3.3V<VIN<7V, T= 25 C 0<IOUT<4A, 3.3V<VIN<7V, Over Temp. 0<IOUT<4A, 4.0V<VIN<7V, T= 25 C 0<IOUT<4... |
| Description |
3.0V 4.0A low dropout voltage regulator
2.5V 4.0A low dropout voltage regulator
4.0A Low Dropout Voltage Regulator Adjustable & Fix Output
1.5V 4.0A low dropout voltage regulator
3.3V 4.0A low dropout voltage regulator
Adjustable 4.0A low dropout voltage regulator
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| File Size |
106.91K /
8 Page |
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it Online |
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Micross Components
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| Part No. |
ICE4N73
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| OCR Text |
...r avalanche current, repetitive 2 a limited by t j max dv/dt mosfet dv/dt ruggedness 50 v/ns v ds = 480v, i d = 4a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 65 w t c = 25c t j , t stg oper... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
563.29K /
4 Page |
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it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE4N73
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| OCR Text |
...i ar limited by t j max 2 a mosfet d v /d t ruggedness d v /d t v ds =480v, i d =4a, t j =125 o c 50 v/ns gate source voltage v gs static 20 v ac ( f >1hz) 30 power dissipation p tot t c =25 o ... |
| Description |
Enhancement Mode MOSFET
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| File Size |
581.83K /
8 Page |
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it Online |
Download Datasheet |
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Micross Components
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| Part No. |
ICE4N73FP
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| OCR Text |
...r avalanche current, repetitive 2 a limited by t j max dv/dt mosfet dv/dt ruggedness 50 v/ns v ds = 480v, i d = 4a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c t j , t stg oper... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
550.40K /
4 Page |
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it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE4N73FP
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| OCR Text |
2=drain, 3=source d s g ice4n73fp n - channel enhancement mode mosfet features ? low r ds(on) ? ultra low gate charge ...4a max v ( br)dss i d =250ua 730v min r ds(on) v gs =10v 1.0 typ q g v ds =480... |
| Description |
Enhancement Mode MOSFET
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| File Size |
744.62K /
9 Page |
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it Online |
Download Datasheet |
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Micross Components
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| Part No. |
ICE4N73D
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| OCR Text |
...r avalanche current, repetitive 2 a limited by t j max dv/dt mosfet dv/dt ruggedness 50 v/ns v ds = 480v, i d = 4a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 65 w t c = 25c t j , t stg oper... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
563.01K /
4 Page |
View
it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE4N73D
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| OCR Text |
...i ar limited by t j max 2 a mosfet d v /d t ruggedness d v /d t v ds =480v, i d =4a, t j =125 o c 50 v/ns gate source voltage v gs static 20 v ac ( f >1hz) 30 power dissipation p tot t c =25 o ... |
| Description |
Enhancement Mode MOSFET
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| File Size |
613.37K /
8 Page |
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it Online |
Download Datasheet |
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Micross Components
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| Part No. |
ICE4N70
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| OCR Text |
...r avalanche current, repetitive 2 a limited by t j max dv/dt mosfet dv/dt ruggedness 50 v/ns v ds = 480v, i d = 4a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 65 w t c = 25c t j , t stg oper... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
754.63K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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