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SC440 SP204ET TS78M06A H8D3206 173S1 80085 XC6202PH SFS9Z24
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  w 400 Datasheet PDF File

For w 400 Found Datasheets File :: 118247    Search Time::2.781ms    
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    BAT54CW-T1 BAT54CW-T3 BAT54SW-T1 BAT54SW-T3 BAT54AW-T1 BAT54AW-T3 BAT54W-T1 BAT54W-T3 BAT54W

Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
Part No. BAT54Cw-T1 BAT54Cw-T3 BAT54Sw-T1 BAT54Sw-T3 BAT54Aw-T1 BAT54Aw-T3 BAT54w-T1 BAT54w-T3 BAT54w
OCR Text wTE POwER SEMICONDUCTORS BAT54w / Aw / Cw / Sw SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! ! ! Low Turn-on Voltage A L Fast Swi...400 500 1000 2.0 10 5.0 mV Reverse Leakage Current Junction Capacitance Reverse Recovery Time ...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE 表面贴装肖特基势垒二极管

File Size 36.12K  /  3 Page

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    BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES

NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BAT54Cw BAT54Sw BAT54Aw BAT54w BAT54CwT/R BAT54wSERIES
OCR Text ...54w series PINNING BAT54 PIN w 1 2 3 a n.c. k Aw k1 k2 Cw a1 a2 Sw a1 k2 k1, a2 Fig.3 handbook, 2 columns 1 2 MLC360 3 a1, a2 k1...400 500 800 2 5 mV mV mV mV mV A ns PARAMETER CONDITIONS MAX. UNIT Cd Note diode capacitance ...
Description Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes

File Size 29.07K  /  5 Page

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    BAT54C

RECTRON[Rectron Semiconductor]
Part No. BAT54C
OCR Text ... Cj trr Rjc uA pF ns o C/w RECTRON USA 1315 John Reed Court, Industry, CA 91745 Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com
Description DUAL SURFACE MOUNT SCHOTTKY

File Size 16.35K  /  1 Page

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    BCM5823

ETC[ETC]
Part No. BCM5823
OCR Text .../O * Low power consumption: 1.3 w * Package: 256 PBGA (27 x 27) * Optional EEPROM interface to configure PCI registers * Concurrent proc...400 DiffieHellman transactions per second. The high level of performance and integration in the BCM5...
Description SECURITY PROCESSOR

File Size 118.86K  /  2 Page

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    BCM7038

Broadcom
ETC
Part No. BCM7038
OCR Text ...tional Block Diagram 6 4-bit w ide D D R D R A M T e st IC E IR /LE D /K ey/U A R T S P I/I 2 C /G P IO /P w M S m a rtC a rd SRAM ROM FLASH PCI The BCM7038 combines an IF demodulator, an NTSC/PAL video 3D Y/C comb filter ...
Description Dual High-Definition Digital Video System-on-Chip Solution for Cable, Satellite, and DTV
DUAL HD DIGITAL VIDEO SYSTEM ON CHIP SOLUTION FOR CABLE SATELLITE AND DTV

File Size 383.79K  /  2 Page

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    BFG520W BFG520W_X BFG520W/X

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BFG520w BFG520w_X BFG520w/X
OCR Text ... 85 C; note 1 VALUE 180 UNIT K/w PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) tot...400 200 0 0 50 100 150 T s ( C) o 200 Fig.2 Power derating curve. 1998 Oct 02 3 ...
Description NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistors

File Size 154.15K  /  16 Page

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    BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X
OCR Text ...note 1 THERMAL RESISTANCE 290 K/w September 1995 3 Philips Semiconductors Product specification NPN 9 GHz wideband transistor...400 MRA670-1 handbook, halfpage 250 MRA671 Ptot (mw) 300 hFE 200 150 200 100 10...
Description NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体

File Size 146.07K  /  13 Page

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    BTS117

INFINEON TECHNOLOGIES AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BTS117
OCR Text ...- 55 ... +150 50 1000 3000 C w mJ V TC = 25 C Unclamped single pulse inductive energy ID(ISO) = 3.5 A Electrostatic discharge vol...400 ms, RI = 2 , ID=0,5*3.5A td = 400 ms, RI = 2 , ID= 3.5A DIN humidity category, DIN 40 040 IEC cl...
Description 10 A BUF OR INV BASED PRPHL DRVR, PSFM3
Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection)
From old datasheet system

File Size 137.31K  /  10 Page

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    BTS118D

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BTS118D
OCR Text ...0 and 10 V, td = 400 ms, RI = 2 w, RL = 6 w, VA = 13.5 V Electrostatic discharge voltage2) (Human Body Model) VESD according to Jedec norm EIA/JESD22-A114-B, Section 4 Jedec humidity category,J-STD-20-B IEC climatic category; DIN EN 60068-1...
Description Smart Lowside Power Switch

File Size 331.57K  /  10 Page

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    BUH1215 4496

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BUH1215 4496
OCR Text ... 150 150 Uni t V V V A A A A w o o C C 1/7 January 1999 BUH1215 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Ma...400 V I B1 = 2 A I C = 12 A I B1 = 2 A I C = 12 A I B2 = -6 A 1.5 110 4 220 s ns s ns f ...
Description HIGH VOLTAGE FAST-SwITCHING NPN POwER TRANSISTOR
From old datasheet system

File Size 73.01K  /  7 Page

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