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				GeneSiC Semiconductor, Inc.
Part No.	GB05SHT06-CAU
OCR Text	...aximum ratings at t j = 250 c, unless otherwise specified parameter symbol conditions values unit repetitive peak reverse voltage v rrm 650 v continuous forward current i f t c 215 c 5 a rms forward current i f ( ...
Description	Silicon Carbide Power Schottky Diode Chip
File Size	210.47K / 3 Page	View it Online	Download Datasheet

				GeneSiC Semiconductor, Inc.
Part No.	GB05SHT06-CAL
OCR Text	...aximum ratings at t j = 250 c, unless otherwise specified parameter symbol conditions values unit repetitive peak reverse voltage v rrm 650 v continuous forward current i f t c 215 c 5 a rms forward current i f ( ...
Description	Silicon Carbide Power Schottky Diode Chip
File Size	210.24K / 3 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCP8105
OCR Text	... a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics drain-source voltage gate-source voltage drain current (dc) drain current (p...
Description	MOSFETs
File Size	227.95K / 9 Page	View it Online	Download Datasheet

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