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New Jersey Semi-Conductor P...
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| Part No. |
BUZ72L
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| OCR Text |
...55... + 150 <3.1 75 e 55/150/56 unit a mj v w c k/w quality semi-conductors
buz 72 l electrical characteristics, at 7] = 25c, unless other...source breakdown voltage vgs = 0 v, /d = 0.25 ma, 7] = 25 c gate threshold voltage ^gs^ds, /d = 1 rn... |
| Description |
Enhancement mode
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| File Size |
78.54K /
3 Page |
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Download Datasheet
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Micross Components
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| Part No. |
ICE15N65FP
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| OCR Text |
... systems symbol parameter value unit conditions i d continous drain current 15 a t c = 25c i d , pulse pulsed drain current 45 a t c = 25c...source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c t j , t stg operat... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
750.01K /
4 Page |
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it Online |
Download Datasheet
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New Jersey Semi-Conductor P...
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| Part No. |
BUZ72A
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| OCR Text |
...55... + 150 <3.1 75 e 55/150/56 unit a mj v w c k/w nj semi-conductors reserves the right to change test conditions, parameter limits and pa...source breakdown voltage vgs = 0 v, /d = 0.25 ma, 7] = 25 "c gate threshold voltage vgs=vds,id= 1 ma... |
| Description |
Enhancement mode
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| File Size |
94.66K /
4 Page |
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it Online |
Download Datasheet
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ST Microelectronics
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| Part No. |
STW8NB100
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| OCR Text |
... VDD V (BR)DSS, T j TJMAX.
unit V V V A A A W W/C V/ns C C 1/8
(*)Pulse width limited by safe operating area
STW8NB100
THERMAL D...source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = ... |
| Description |
N-CHANNEL 1000V - 1.3 OHM - 7.3A - TO-247 POWERMESH MOSFET
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| File Size |
253.36K /
9 Page |
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it Online |
Download Datasheet
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Price and Availability
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