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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SK3215
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| OCR Text |
... any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rig... |
| Description |
Silicon N Channel MOS FET High Speed Power Switching
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| File Size |
30.43K /
5 Page |
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Hittite Microwave Corpo...
HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC300LM1
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| OCR Text |
...ated Output Power (Psat) Output Third Order Intercept (IP3) (Two-tone Input Power = -5 dBm each tone) Supply Current (Idd)(Vdd = +6.0 Vdc)* 5 5 35 20 21 21 13 Min. Typ. 25.5 - 33.5 16 0.06 8 8 50 23 24 26 220 275 22 0.07 Max. Units GHz dB d... |
| Description |
SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz
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| File Size |
273.50K /
8 Page |
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it Online |
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美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC344
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| OCR Text |
...ower for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF)
7 - 20
For price, delivery, and to place orders, please... |
| Description |
GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8.0 GHz
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| File Size |
163.87K /
6 Page |
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HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC345LP3
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| OCR Text |
...ression
"Off State"
Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone, 1MHz Tone Separation) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF)
14 - 194
For price, delivery, an... |
| Description |
GaAs MMIC SP4T NON-REFLECTIVE POSITIVE CONTROL SWITCH/ DC - 8.0 GHz
GaAs MMIC SP4T NON-REFLECTIVE POSITIVE CONTROL SWITCH, DC - 8.0 GHz
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| File Size |
198.83K /
6 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
HRC0203C
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| OCR Text |
...sas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, al... |
| Description |
Diodes>Switching
Silicon Schottky Barrier Diode for Rectifying
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| File Size |
87.39K /
8 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
HSB88WA
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| OCR Text |
...sas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, al... |
| Description |
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
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| File Size |
69.55K /
7 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
HVC417C
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| OCR Text |
...sas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, al... |
| Description |
Diodes>Variable Capacitance
Variable Capacitance Diode for tuner
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| File Size |
78.60K /
7 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
HVD380B
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| OCR Text |
...sas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, al... |
| Description |
Variable Capacitance Diode for VCO
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| File Size |
68.45K /
7 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
HZM3.3WA
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| OCR Text |
...sas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, al... |
| Description |
SILICON EPITAXIAL PLANAR ZENER DIODE FOR SURGE ABSORB
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| File Size |
81.08K /
8 Page |
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it Online |
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Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
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| Part No. |
HZM6.8ZMWA
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| OCR Text |
...sas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, al... |
| Description |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Silicon Planar Zener Diode for Surge Absorb
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| File Size |
87.87K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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