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				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	BUK555-200 BUK555-200A BUK555-200B
OCR Text	... PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VG...
Description	PowerMOS transistor Logic level FET 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	70.01K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BUK555-60A BUK555-60B
OCR Text	... PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VG...
Description	PowerMOS transistor Logic level FET 35 A, 60 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	51.28K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK555-60H
OCR Text	... PINNING - TO220AB PIN 1 2 3 tab gate drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g source drain 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR V...
Description	PowerMOS transistor Logic level FET
File Size	64.82K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BUK564-200A
OCR Text	...asured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad MIN. 3.5 TYP. 6.0 800 120 65 16 75 120 50 2.5 7.5 MAX. 1000 160 90 30 110 180 75 UNIT S pF pF pF ns ns ns ns nH nH REVERSE ...
Description	PowerMOS transistor Logic level FET 9.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	72.99K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BUK564-60H
OCR Text	...asured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad REVERSE DIODE LIMITING ...3.5 20 3 2.5 0 1 2 VDS / V 3 4 5 120 110 100 90 80 70 60 50 40 30 20 10 0 60 0 20 40 ...
Description	PowerMOS transistor Logic level FET 39 A, 60 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	62.01K / 7 Page	View it Online	Download Datasheet

				ZF Electronics Corporation ZF Electronics, Corp. CHERRY[Cherry Semiconductor Corporation]
Part No.	CS8120YD14 CS8120YTVA5 CS8120YTHA5 CS8120 CS8120YDP5 CS8120YDPR5 CS8120YN8 CS8120YDR14 CS8120YT5 ZFELECTRONICSCORPORATION-CS8120YT5
OCR Text	...Package Options 5 Lead TO-220 tab (Gnd) V OUT V IN Over Voltage Shutdown ENABLE Comparator Bandgap Supply + Error Amplifier 14 Lead SO...3/98 + - ENABLE Output Current Limit ENABLE NC NC 1 Thermal Shutdown Bandgap Refe...
Description	T1/E1 Transformer Miniature 5V的，300mA的线性稳压器和启用与复位 5V, 300mA Linear Regulator with and ENABLE RESET 5V/ 300mA Linear Regulator with and ENABLE RESET
File Size	198.27K / 8 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	IXFX120N20 IXFK120N20
OCR Text	...C PLUS 247TM (IXFX) G (tab) D TO-264 AA (IXFK) TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS TJ 150C, RG = 2 W TC = ...3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min...
Description	HiPerFET Power MOSFETs CAP 0.01UF 50V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 120 A, 200 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	47.08K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXST35N120B IXSH35N120B
OCR Text	...C C g g TO-247 AD (IXSH) (tab) G C E TO-268 ( IXST) G E (tab) C = Collector tab = Collector TJ = 125C, VCE = 720 V; VGE =...3 TJ = 25C TJ = 125C 6 50 2.5 100 TJ = 25C TJ = 125C 3.6 2.9 V V A mA nA V V * AC motor speed con...
Description	IGBT
File Size	81.21K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXTA1N100 IXTP1N100
OCR Text	... TO-220AB (IXTP) GD D (tab) S TO-263 AA (IXTA) TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 18 TC = 25C 6 200 3 54 -55 ... +150 150 -55 ... +150 G S D (tab) G = Gate, S = Source, D = Drain...
Description	Discrete MOSFETs: Standard N-channel Types High Voltage MOSFET
File Size	45.67K / 2 Page	View it Online	Download Datasheet

For tab 3-lead Found Datasheets File :: 7196 Search Time::1ms
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