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Infineon
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| Part No. |
SPLBG94 SPLBG81
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| OCR Text |
...ll structure ? highly-reliable strained-layer inga(al)as/gaas material ? standard wavelength selection is 3 nm, others on request ? solderable p- and n-side metallization applications ? pumping of solid state lasers (nd, yb, er, ho, ) ... |
| Description |
Unmounted Laser Bar
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| File Size |
57.07K /
3 Page |
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it Online |
Download Datasheet
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Infineon
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| Part No. |
SPLBG98 SPLBW81 SPLBS94 SPLBX83 SPLBX98 SPLBX94 SPLBX81
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| OCR Text |
...ll structure highly-reliable strained-layer inga(al)as/gaas material standard wavelength selection is 3nm, others on request solderable p- and n-side metallization applications pumping of solid state lasers (nd, yb, er, ho, ?) ... |
| Description |
Unmounted Laser Bar 40 W, 980 nm
Unmounted Laser Bar 20 W, 808 nm
Unmounted Laser Bar 100 W, qcw
Unmounted Laser Bar 30 W, 830 nm
Unmounted Laser Bar 30 W, 980 nm
Unmounted Laser Bar 30 W, 940 nm
Unmounted Laser Bar 30 W, 808 nm
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| File Size |
104.84K /
3 Page |
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it Online |
Download Datasheet |
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California Eastern Laboratories, Inc.
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| Part No. |
NX7361JB-BC NX7361JB-BC-AZ
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| OCR Text |
...361jb-bc is a 1310 nm developed strained mul- tiple quantum well (st-mqw) structured pulsed laser diode dip module with single mode fiber and internal thermoelectric cooler. it is designed for light sources of optical measurement equipment... |
| Description |
NECs 1310 nm InGaAsP MQW FP PULSD LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN) 邻舍1310纳米计划生育PULSD InGaAsP多量子阱激光二极管应用浸时域反射计50毫瓦最小包装）
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| File Size |
177.56K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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