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static-dissipative Datasheet PDF File

For static-dissipative Found Datasheets File :: 758 Search Time::1.218ms
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				FAIRCHILD[Fairchild Semiconductor]
Part No.	RMPA0965
OCR Text	...e solvents or water residues. * Static Sensitivity: Follow ESD precautions to protect against ESD damage: - A properly grounded static-dissipative surface on which to place devices. - static-dissipative floor or mat. - A properly grounded c...
Description	CDMA and CDMA2000-1X PowerEdge Power Amplifier Module
File Size	458.12K / 6 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDC645N FDC645
OCR Text	...Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output C...dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated...
Description	N-Channel PowerTrench MOSFET
File Size	305.15K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDP4020 FDP4020P FDB4020P
OCR Text	...Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 A ...dissipative plastic bag, barcode labeled, and placed inside a box made of recyclable corrugated pa p...
Description	P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
File Size	206.53K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS3580
OCR Text	...Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A I...dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated...
Description	80V N-Channel PowerTrenchTM MOSFET
File Size	200.30K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp.
Part No.	NDC651N
OCR Text	...DS = VGS, ID = 250 A TJ = 125oC Static Drain-Source On-Resistance VGS = 4.5 V, ID = 3.2 A TJ = 125oC VGS = 10 V, ID = 4 A ID(on) gFS Ciss Co...dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated...
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor 3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
File Size	238.58K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDFS2P103
OCR Text	...Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance ID = -250 A VDS = VGS, ...dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated...
Description	Integrated P-Channel PowerTrench MOSFET and Schottky Diode
File Size	293.88K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS8926A
OCR Text	...shold Voltage Temp. Coefficient Static Drain-Source On-Resistance 1 V mV /oC VGS(th)/TJ RDS(ON) 0.03 0.052 0.038 ID(ON) ...dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated...
Description	Dual N-Channel Enhancement Mode Field Effect Transistor 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
File Size	199.66K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	NDT451AN NDT451 NDT451ANJ23Z
OCR Text	...VDS = VGS, ID = 250 A TJ = 125C Static Drain-Source On-Resistance VGS = 10 V, ID = 7.2 A TJ = 125C VGS = 4.5 V, ID = 6.0 A TJ = 125C ID(on) ...dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 7.2A I(D) \| SOT-223 N-Channel Enhancement Mode Field Effect Transistor
File Size	225.47K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	NDT451 NDT451N
OCR Text	...VDS = VGS, ID = 250 A TJ = 125C Static Drain-Source On-Resistance VGS = 10 V, ID = 5.5 A TJ = 125C VGS = 4.5 V, ID = 4.3 A ID(on) gFS Ciss C...dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	224.89K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	NDP6060 NDB6060
OCR Text	...VDS = VGS, ID = 250 A TJ = 125C Static Drain-Source On-Resistance VGS = 10 V, ID = 24 A TJ = 125C On-State Drain Current Forward Transconduc...dissipative plastic bag, barcode labeled, and placed inside a box made of recyclable corrugated pa p...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	353.27K / 12 Page	View it Online	Download Datasheet

For static-dissipative Found Datasheets File :: 758 Search Time::1.218ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |

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