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Atmel Corp.
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| Part No. |
AT49BN1604
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| OCR Text |
...ming. the output voltage can be sepa- rately controlled down to 1.65v through the vccq supply pin. the device is segmented into two memory planes. reads from memory plane b may be performed even while pro- gram or erase functions are being ... |
| Description |
16-megabit Burst Mode 3-volt Only Flash Memory(16M3V猝发模式闪速存储器)
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| File Size |
123.99K /
19 Page |
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it Online |
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Rabbit Semiconductor
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| Part No. |
22374A
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| OCR Text |
.... for each sector to be erased sepa- rately you need to include the following command sequence to specify it independent of the other sectors as well as identifying when the command will be called in the code. 8 kbyte sector 8 kbyte sector... |
| Description |
Migrating between Boot and Uniform Sectored Flash Devices 引导和之间的迁移统一扇区闪存器件
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| File Size |
58.23K /
5 Page |
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it Online |
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意法半导
STMicroelectronics N.V.
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| Part No. |
M48T37V M48T37Y
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| OCR Text |
...nd battery packages are shipped sepa- rately in plastic anti-static tubes or in tape &reel form. for the 44 lead soic, the battery/crystal package (i.e. snaphat) part number is "m4t28- br12sh1". as figure 3 shows, the static memory array an... |
| Description |
3.3V-5V 256Kbit (32Kb x8) Timekeeper SRAM(256K32K x 8) Timekeeper 静态RAM) 3.3 - 5V56Kbit（的32KB × 8）计时器的SRAM56K位（32K的8）计时器静态内存）
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| File Size |
176.84K /
20 Page |
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it Online |
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Maxwell Technologies, Inc
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| Part No. |
7025E 7025ERPQB-45 7025ERPQS-45 7025ERPQB-35 7025ERPQI-35 7025ERPQE-35
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| OCR Text |
...des two independent ports with sepa- rate control, address, and i/o pins that permit independent, asynchronous access for reads or writes to any location in memory. an automatic power down feature controlled by cs permits the on-chip circu... |
| Description |
(8K x 16-Bit) Dual Port RAM High-Speed CMOS 8K X 16 DUAL-PORT SRAM, 35 ns, QFP84
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| File Size |
522.64K /
19 Page |
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it Online |
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Price and Availability
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