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Compensated Devices Incorporated
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| Part No. |
1N5194
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| OCR Text |
...otherwise specified
TYPE VRM V rwm IO IO TA = 150C mA 50 50 50 I FSM TP = 1/120 s TA = 25C A 2 2 2
V (pk) 1N5194 1N5195 1N5196 80 180 250
V (pk) 70 180 225
mA 200 200 200
FIGURE 1
TYPE
VF @100mA
I R1 at V rwm TA = 25C ... |
| Description |
GENERAL PURPOSE SILICON DIODES
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| File Size |
37.29K /
3 Page |
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CDI-DIODE[Compensated Deuices Incorporated]
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| Part No. |
1N5195 1N5194 1N5196
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| OCR Text |
...otherwise specified
TYPE VRM V rwm IO IO TA = 150C mA 50 50 50 I FSM TP = 1/120 s TA = 25C A 2 2 2
V (pk) 1N5194 1N5195 1N5196 80 180 250
V (pk) 70 180 225
mA 200 200 200
FIGURE 1
TYPE
VF @100mA
I R1 at V rwm TA = 25C ... |
| Description |
GENERAL PURPOSE SILICON DIODES
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| File Size |
31.14K /
2 Page |
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it Online |
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http://
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| Part No. |
VESD05A8B-HNH VESD05A8B-HNH-GS08
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| OCR Text |
...rge ? working voltage range v rwm = 5 v ? e4 - precious metal (e .g. ag, au, nipd, nipdau) (no sn) ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec marking (example only) dot = pin 1 marking y = type code... |
| Description |
8-Line ESD-Protection Diode Array in LLP1713-9L
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| File Size |
530.43K /
7 Page |
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it Online |
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Microsemi
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| Part No. |
JANTX1N486B JAN1N486B JANTX1N485B JAN1N485B
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| OCR Text |
...otherwise specified
TYPE VRM V rwm IO IO TA = 150C mA 50 50 50 I FSM TP = 1/120 s TA = 25C A 2 2 2
V (pk) 1N483B 1N485B 1N486B 80 180 250
V (pk) 70 180 225
mA 200 200 200
FIGURE 1
TYPE
VF @100mA
I R1 at V rwm TA = 25C ... |
| Description |
Signal or Computer Diode
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| File Size |
45.69K /
3 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
ESDBKU3V0D3
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| OCR Text |
...c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current electrical characteristics (t a = 25 c unless otherwise noted ) ... |
| Description |
SOD-323 Plastic-Encapsulate Diodes
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| File Size |
338.31K /
3 Page |
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it Online |
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