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Motorola
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| Part No. |
MHw2821D
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| OCR Text |
rf power amplifier 20 w, 806 to 870 mhz (1 suffix) 18 w, 890 to 950 mhz (2 suffix) ordering information mhw28211 mhw28212 t a = 30 to 100 c power module case 301ab 1 5 (top view) pin connections order this document by mhw2821/d p in v b... |
| Description |
MHw2821 Technical Data Sheet UHF Silicon FET Power Amplifiers
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| File Size |
141.73K /
6 Page |
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Infineon Technologies A...
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| Part No. |
PTAB182002FCV1R0
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| OCR Text |
...9 thermally-enhanced high power rf ldmos fet 190 w, 28 v, 1805 C 1880 mhz description the ptab182002fc is a 190-watt ldmos fet intended for use in multi-standard cellular power amplifer applications in the 1805 to 1880 ... |
| Description |
Thermally-Enhanced High Power rf LDMOS FET
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| File Size |
439.47K /
13 Page |
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Infineon Technologies A...
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| Part No. |
PXAC260602FCV1R0XTMA1 PXAC260602FC-16 PXAC260602FCV1R250 PXAC260602FCV1R250XTMA1
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| OCR Text |
... thermally-enhanced high power rf ldmos fet 60 w, p 3db @ 28 v, 2620 C 2690 mhz description the pxac260602fc is a 60-watt ldmos fet with an asymmetrical design intended for use in multi-standard cellular power amplifer applica... |
| Description |
Thermally-Enhanced High Power rf LDMOS FET 60 w, P3dB @ 28 V, 2620 ?2690 MHz
Thermally-Enhanced High Power rf LDMOS FET 60 w, P3dB @ 28 V, 2620 ?2690 MHz
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| File Size |
467.95K /
7 Page |
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Infineon Technologies A...
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| Part No. |
PTVA042502FCV1R0 PTVA042502EC
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| OCR Text |
...9 thermally-enhanced high power rf ldmos fet 250 w, 50 v, 470 C 806 mhz description the ptva042502ec and ptva042502fc ldmos fets are designed for use in power amplifer applications in the 470 mhz to 806 mhz frequency band. features includ... |
| Description |
Thermally-Enhanced High Power rf LDMOS FET 250 w, 50 V, 470 ?806 MHz
Thermally-Enhanced High Power rf LDMOS FET 250 w, 50 V, 470 ?806 MHz
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| File Size |
405.97K /
9 Page |
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Infineon Technologies A...
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| Part No. |
PTFB181702FCV1R0
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| OCR Text |
... thermally-enhanced high power rf ldmos fet 170 w, 28 v, 1805 C 1880 mhz description the ptfb181702fc is a 170-watt ldmos fet intended for use in multi-standard cellular power amplifer applications. features include inpu... |
| Description |
Thermally-Enhanced High Power rf LDMOS FET
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| File Size |
520.30K /
7 Page |
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Infineon Technologies A...
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| Part No. |
PTFB091802FCV1R0
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| OCR Text |
... thermally-enhanced high power rf ldmos fet 180 w, 28 v, 920 C 960 mhz description the ptfb091802fc ldmos fet is designed for use in power amplifer applications in the 920 mhz to 960 mhz frequency band. features include high gain and a t... |
| Description |
Thermally-Enhanced High Power rf LDMOS FET 180 w, 28 V, 920 ?960 MHz
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| File Size |
377.13K /
8 Page |
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Infineon Technologies A...
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| Part No. |
PTAC210802FCV1R0
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| OCR Text |
... thermally-enhanced high power rf ldmos fet 80 w, 28 v, 2110 C 2170 mhz description the ptac210802fc is an 80-watt ldmos fet with an asymmetrical design intended for use in multi-standard cellular power amplifer applications in the 2110 ... |
| Description |
Thermally-Enhanced High Power rf LDMOS FET 80 w, 28 V, 2110 ?2170 MHz
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| File Size |
507.96K /
7 Page |
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AVAGO TECHNOLOGIES LIMI...
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| Part No. |
HSMP-3834-TR2G HSMP-3832-BLKG HSMP-3832-TR1G
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| OCR Text |
rf pin diodes data sheet features ? diodes optimized for: low capacitance switching low current attenuator ? surface moun...w ard bias current (ma) figure 5. 2nd harmonic input intercept p oint vs . fo rw ard bias current ... |
| Description |
Surface Mount rf PIN Diodes
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| File Size |
234.36K /
7 Page |
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ATMEL Corporation
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| Part No. |
AT73C202-14
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| OCR Text |
...130ma/2.8v low-noise, high psrr rf ldo voltage regulators 130ma/2.7v/2.8v baseband low-noise, high psrr analog ldo regulator ultra low-...w, 0603 r002 4.7 k ?, 1/8 w, 0603 r003 2 k ?, 1/8 w, 0603 c001, c003, c004, c005, c006, c007, c010... |
| Description |
300mA/1.8V/2.5V Switching Regulator for Baseband Supply
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| File Size |
139.21K /
21 Page |
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Price and Availability
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