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				Philips Semiconductors
Part No.	pHp165NQ08T
OCR Text	...parameter Source-drain diode qr VGS = 0 V; IS = 5 A; dIS/dt = 150 A/s; VDS = 12 V VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 11; see Fi...p = 10-2 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient ther...
Description	N-channel TrenchMOS SiliconMAX Standard Level FET
File Size	216.10K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BYC8DX-600 BYC8DX-600-15
OCR Text	...= 600 V Dynamic characteristics qr trr recovered charge reverse recovery time IF = 1 A; VR = 100 V; dIF/dt = 100 A/s IF = 8 A; VR = 400 V; d...p q m T D HE z A1 L2 L1(1) j k Q L 1 2 b1 b e w M c 0 10 scale ...
Description	Hyperfast power diode Isolated plastic package Hyperfast power diode 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220
File Size	125.47K / 11 Page	View it Online	Download Datasheet

				Semikron
Part No.	SKKT56-08
OCR Text	...UHOLDELOLW\ 8/ UH.RJQL]HG ILOH qr ( 7\SL.DO $SSOL.DWLRQV '& pRWRU .RQWURO HJ IRU pD.KLQH WRROV $& pRWRU VRIW VWDUWHUV 7HpSHUDWXUH .RQW...p$ SDJH % 6..7 $ 6..+ $ 6..7 $ 6..7 % $ 6..+ $ 7KLV WH.KQL.DO LQIRUpDWLRQ V...
Description	THYRISTOR MODULE,SCR DOUBLER,800V V(RRM),55A I(T)
File Size	465.82K / 5 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BYC8D-600 BYC8D-600127 BYC8D-600-15
OCR Text	...= 100 C Dynamic characteristics qr trr recovered charge reverse recovery time IF = 1 A; VR = 100 V; dIF/dt = 100 A/s; Tj = 25 C IF = 1 A; VR...p A1 A q D1 D H Q b1 L 1 2 b e c 0 Dimensions Unit mm max nom min A 4.7 4.3 ...
Description	Hyperfast power diode Reduces switching losses in associated MOSFET
File Size	143.38K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	pSMN102-200Y
OCR Text	...gy. 1.2 Features I Low body qr I Fast switching 1.3 Applications I Industrial DC motor control I DC-to-DC converters I Class D audio...p tot p der = ----------------------- x 100 % p tot ( 25C ) Fig 1. Normalized total power dissipatio...
Description	N-channel TrenchMOS standard level FET
File Size	69.54K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	pHp165NQ08T
OCR Text	...parameter Source-drain diode qr VGS = 0 V; IS = 5 A; dIS/dt = 150 A/s; VDS = 12 V VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 11; see Fi...p = 10-2 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient ther...
Description	N-channel TrenchMOS SiliconMAX standard level FET
File Size	175.36K / 13 Page	View it Online	Download Datasheet

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