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SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
BB112 Q62702-B240
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| Description |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8.0 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8.0 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V)
From old datasheet system
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| File Size |
41.49K /
3 Page |
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it Online |
Download Datasheet
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q62702-A764 BAT30
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| Description |
silicon sohottlky diode RF detector low-power bias very low capaacitance For freguencies up to 25Ghz
FILTER BANDPASS 2.4GHZ 1008 SMD
silicon schottky diode (RF detector Low-power mixer Zerobias Very low capacitance for frequencies up to 25 GHz)
From old datasheet system
silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz)
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| File Size |
244.37K /
2 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BBY58-03W Q62702-B912
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| Description |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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| File Size |
13.43K /
3 Page |
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it Online |
Download Datasheet |
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Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
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| Part No. |
CGY60 Q62702G-39
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| Description |
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems)
From old datasheet system
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems) 砷化镓微波单片集成电路（低移动通信PCN中的DECT，在2.7VV系统GSM噪声前置放大器）
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| File Size |
38.60K /
7 Page |
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it Online |
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