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punch Datasheet PDF File

For punch Found Datasheets File :: 2160 Search Time::3.734ms
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				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BTS114A BTS114
OCR Text	...2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 TO 220 AB Ordering Code Tape & reel E3045 A C67078-S5000-A11 13.5 2) 15.6 9 19.02.04 TEMPFE...
Description	TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic) TEMPFET（N通道增强模式晶闸管特征温度传感器
File Size	569.32K / 10 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BTS117
OCR Text	...0.5 GPT05164 1) shear and punch direction no burrs this surface Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention ple...
Description	Smart Lowside Power Switch
File Size	195.33K / 9 Page	View it Online	Download Datasheet

				Dynex Semiconductor Ltd.
Part No.	DIM400DDM17-A000
OCR Text	... Thermal Cycling Capability Non punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 400A 800A *(measured at the power busbars and not the auxiliary termi...
Description	Dual Switch IGBT Module
File Size	144.01K / 10 Page	View it Online	Download Datasheet

				Dynex Semiconductor Ltd.
Part No.	DIM400GDM33-A000
OCR Text	... Thermal Cycling Capability Non punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES VCE(sat) (typ) (max) IC IC(PK) (max) 3300V 3.2V 400A 800A APPLICATIONS s s s External connection E1 E1 C2 C2 Hig...
Description	Dual Switch IGBT Module Preliminary Information
File Size	162.21K / 10 Page	View it Online	Download Datasheet

				Dynex Semiconductor Ltd.
Part No.	DIM400LSS17-A000
OCR Text	...10s Short Circuit Withstand Non punch Through Silicon Isolated Copper Base KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 400A 800A *(measured at the power busbars and not the auxiliary terminals) APPLICAT...
Description	Single Switch IGBT Module
File Size	134.69K / 10 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT20GT60BRDQ1 APT20GT60BRDQ1G
OCR Text	...voltage power IGBTs. Using Non- punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed. * Low Forward Voltage Drop * Low Tail Current * RBSOA and SCSOA Rated * High Freq. Switching to 150K...
Description	Thunderbolt IGBT
File Size	426.11K / 9 Page	View it Online	Download Datasheet

				SIEMENS
Part No.	BTS121A
OCR Text	...2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 Semiconductor Group 13.5 2) 15.6 9 This datasheet has been download from: www.datasheetcatalog...
Description	TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)
File Size	331.11K / 10 Page	View it Online	Download Datasheet

				Bourns Electronic Solutions
Part No.	CD2320-B11000 CD2320-B1200 CD2320-B1600 CD2320-B1800 CD2320-B1400
OCR Text	...Diameter Sprocket Hole Position punch Hole Position punch Hole Pitch Sprocket Hole Pitch Embossment Center Overall Tape Thickness Tape Width Reel Width Quantity per Reel Symbol A B C d D D1 D2 E F P P0 P1 T W W1 -- 2320 5.90 0.10 (0....
Description	CD2320-B1200~B11000 SURFACE MOUNT BRIDGE RECTIFIER DIODE
File Size	427.31K / 4 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTG27N120BN FN4482
OCR Text	punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low ...
Description	72A/ 1200V/ NPT Series N-Channel IGBT 72A 1200V NPT Series N-Channel IGBT 72A, 1200V, NPT Series N-Channel IGBT From old datasheet system
File Size	81.92K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGPS40B120UDP
OCR Text	punch Through IGBT Technology. * Low Diode VF. * 10s Short Circuit Capability. * Square RBSOA. * Ultrasoft Diode Reverse Recovery Characteristics. * Positive VCE (on) Temperature Coefficient. * Super-247 Package. * Lead-Free C UltraFast...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 80 A, 1200 V, N-CHANNEL IGBT, TO-274AA
File Size	128.76K / 12 Page	View it Online	Download Datasheet

For punch Found Datasheets File :: 2160 Search Time::3.734ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |