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Shanghai Semitech Semic...
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| Part No. |
GBLC08C
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| OCR Text |
...wer dissipation 350w @8 x 20 us pulse ? low leakage ? fast response time < 5 ns ? protects one power or i/o port ? esd...8a 1.2 gblc05c 5.0 5.0 6.0 1.0 9.80 18.3@8a 1.2 gblc08c 8.0 5.0 8.5 1.0 ... |
| Description |
Bi-directional Configurations
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| File Size |
188.88K /
3 Page |
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Microsemi
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| Part No. |
APT8DQ60KG
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| OCR Text |
... -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1. maximum effective transient thermal impedance, junction-to-case vs. pulse...8a 16a t rr q rr q rr t rr i rrm 120100 8060 40 20 0 1412 10 86 4 2 0 duty cycle = 0.5 t j = 175 ... |
| Description |
High Voltage Fast Recovery Diode
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| File Size |
385.56K /
5 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTB012N04Q8 MTB012N04Q8-0-T3-G
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| OCR Text |
...tg -55~+150 c note : *1 . pulse width limited by maximum junction temperature *2. duty cycle 1% *3....8a *r ds(on) - 12.4 17 m v gs =4.5v, i d =6a dynamic qg *1, 2 - 7.3 - qgs *... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
431.19K /
9 Page |
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it Online |
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Cystech Electonics Corp...
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| Part No. |
MTB012C04Q8 MTB012C04Q8-0-T3-G
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| OCR Text |
... (note 3) c/w note : 1.pulse width limited by maximum junction temperature. 2.surface mounted on 1 in2 copper pad of f...8a *r ds(on) - 15.7 22 m v gs =4.5v, i d =6a *g fs - 12 - s v ds =10v, i d =8a dyna... |
| Description |
N- and P-Channel Enhancement Mode MOSFET
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| File Size |
447.85K /
12 Page |
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it Online |
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Price and Availability
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