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pulse-30a Datasheet PDF File

For pulse-30a Found Datasheets File :: 5820 Search Time::0.953ms
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				IRF[International Rectifier]
Part No.	IRFU3505 IRFR3505
OCR Text	...r Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Ene...30A 4.0 V VDS = 10V, ID = 250A --- S VDS = 25V, ID = 30A 20 VDS = 55V, VGS = 0V A 250 VDS = 55V, VG...
Description	AUTOMOTIVE MOSFET
File Size	580.87K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFU3709Z IRFR3709Z IRFR3709ZPBF IRFU3709ZPBF
OCR Text	...s EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Repetitive Avalanche Energy Typ. --- --- --- Max. 100 12 7.9 Unit...30A VGS = 10V 100 1.5 10 T J = 175C 1.0 1 T J = 25C VDS = 15V 20s PULSE WIDTH ...
Description	30V Single N-Channel HEXFET Power MOSFET in a I-Pak package HEXFET Power MOSFET HEXFET功率MOSFET 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
File Size	213.39K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFU4105Z IRFR4105Z
OCR Text	...r Gate-to-Source Voltage Single Pulse Avalanche Energyd Single Pulse Avalanche Energy Tested Value Avalanche CurrentA Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mountin...
Description	55V Single N-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) 功率MOSFET（讥\u003d 55V的，的Rds（on）\u003d 24.5mohm，身份证\u003d 30A条） Power MOSFET(Vds=55V / Rds(on)=24.5mohm / Id=30A) 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
File Size	203.46K / 11 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	IXFTN100 IXFX15N100 IXFH14N100 IXFHN100 IXFX14N100 IXFT14N100 IXFT15N100
OCR Text	...us Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25...30A = 10mA IG=10mA IXFT14N100 IXFT15N100 IXFX15N100 IXFX14N100 5000 Ciss VGS - Volts ...
Description	HiPerFET Power MOSFETs 14 A, 1000 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	115.80K / 4 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXTK62N25
OCR Text	...us Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 T...30A, -di/dt = 100 A/s, VR = 100V 360 6 ns C IXYS reserves the right to change limits, test con...
Description	High Current MegaMOSFET High Current MegaMOSFET
File Size	84.40K / 2 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6X4016C3F-TQ55 K6X4016C3F-TF55 K6X4016C3F K6X4016C3F-TQ70 K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q K6X4016C3F-TB55 K6X4016C3F-TB70 K6X4016C3F-TF70
OCR Text	... Overshoot: VCC+3.0V in case of pulse width 30ns 3. Undershoot: -3.0V in case of pulse width 30ns 4. Overshoot and undershoot are sampled, not 100% tested CAPACITANCE1) (f=1MHz, TA=25C) Item Input capacitance Input/Output capacitance ...
Description	256Kx16 bit Low Power full CMOS Static RAM 256Kx16位充分的CMOS低功耗静态存储器
File Size	129.39K / 9 Page	View it Online	Download Datasheet

				http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K6X8008C2B-TQ55 DSK6X8008C2B K6X8008C2B K6X8008C2B-B K6X8008C2B-F K6X8008C2B-Q K6X8008C2B-TB55 K6X8008C2B-TB70 K6X8008C2B-TF55 K6X8008C2B-TF70 K6X8008C2B-TQ70 DS_K6X8008C2B
OCR Text	... Overshoot: VCC+3.0V in case of pulse width 30ns. 3. Undershoot: -3.0V in case of pulse width 30ns. 4. Overshoot and undershoot are sampled, not 100% tested. CAPACITANCE1) (f=1MHz, TA=25C) Item Input capacitance Input/Output capacitance...
Description	1Mx8 bit Low Power and Low Voltage CMOS Static RAM 1Mx8位低功耗和低电压的CMOS静态RAM
File Size	129.87K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	PM30CTJ060-3
OCR Text	...D = 15V Minimum fault output pulse width (Note 2) Note 2 : Fault output is given only when the internal OC, SC, OT & UV protection. (o...30A 0.5 ICIN = 10mA Tj = 25C Tj = 125C 0 12 13 14 SWITCHING TIMES (s) Tj = 125C VCC = 300V VD ...
Description	MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
File Size	132.77K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	PM30CTJ060
OCR Text	...D = 15V Minimum fault output pulse width (Note 2) Note 2 : Fault output is given only when the internal OC, SC, OT & UV protection. (o...30A 0.5 ICIN = 10mA Tj = 25C Tj = 125C 0 12 13 14 SWITCHING TIMES (s) Tj = 125C VCC = 300V VD ...
Description	MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
File Size	129.87K / 6 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STL35NF3LL
OCR Text	...e Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 15 35 22 140 80 ...30A, VDD = 27.5V Unit V V V A A A W W/C V/ns J C (q) Pulse width limited by safe operating are...
Description	N-CHANNEL 30V 0.0055 OHM 35A POWERFLAT LOW GATE CHARGE STRIPFET MOSFET N-CHANNEL 30V - 0.0055ohm - 35A PowerFLAT LOW GATE CHARGE STripFET MOSFET N-CHANNEL 30V - 0.0055ohm - 35A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ MOSFET
File Size	182.46K / 6 Page	View it Online	Download Datasheet

For pulse-30a Found Datasheets File :: 5820 Search Time::0.953ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |