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MDE Semiconductor
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| Part No. |
SMDJ100A SMDJ110A SMDJ130A SMDJ120A SMDJ150 SMDJ170 SMDJ160 SMDJ150A SMDJ160A SMDJ170A
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| Description |
100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 110.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 130.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 120.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 150.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 170.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications 160.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
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| File Size |
586.08K /
4 Page |
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VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
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| Part No. |
2N4118A SST4119 2N4117A 2N4119A PN4117A PN4118A PN4119A SST4117 SST4118
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| Description |
N-channel JFETs IC FTDI2232L USB/SERIAL 48-LQFP MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:12V; Case style:SO-8; Current, Id cont:4.8A; Current, Idm pulse:-20A; Power, Pd:1.1W; Resistance, Rds on:0.035R; SMD:1; MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:3.6A; Current, Idm pulse:40A; Power, Pd:1.1W; Resistance, Rds on:0.06R; SMD:1;
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| File Size |
59.13K /
5 Page |
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Vishay Siliconix Vishay Intertechnology,Inc.
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| Part No. |
2N5484 2N5485 2N5486 SST5484 SST5485 SST5486
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| Description |
High Frequency/General Purpose N-channel JFETs MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
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| File Size |
52.89K /
7 Page |
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TOSHIBA
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| Part No. |
MP4411
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| Description |
Power MOS FET Module Silicon N channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and pulse Motor Driver For Solenoid Driver
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| File Size |
210.82K /
7 Page |
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it Online |
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Price and Availability
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