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  power-driven Datasheet PDF File

For power-driven Found Datasheets File :: 36524    Search Time::1.688ms    
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    2SJ361

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ361
OCR Text power switching Features * * * * Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 21 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ361 Absolut...
Description Silicon P-Channel MOS FET

File Size 42.04K  /  9 Page

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    2SJ363

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ363
OCR Text power switching Features * Low on-resistance * Low drive current * 4 V gate drive device can be driven from 5 V source Outline UPAK 21 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ363 Absolute Maximum Ratings (Ta = 2...
Description Silicon P-Channel MOS FET

File Size 36.88K  /  7 Page

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    2SJ386

HITACHI[Hitachi Semiconductor]
Part No. 2SJ386
OCR Text power switching Features * * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline TO-92 Mod D G 32 ...
Description Silicon P-Channel MOS FET

File Size 37.10K  /  7 Page

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    2SJ387 2SJ387L 2SJ387S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ387 2SJ387L 2SJ387S
OCR Text power switching Features * * * * Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4...
Description Silicon P-Channel MOS FET

File Size 46.71K  /  10 Page

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    2SJ399

Hitachi Semiconductor
Part No. 2SJ399
OCR Text power switching Features * * * * * Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G ...
Description Silicon P-Channel MOS FET

File Size 36.00K  /  7 Page

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    2SJ409 2SJ409L 2SJ409S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ409 2SJ409L 2SJ409S
OCR Text power switching Features * * * * * Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 12 1 D G 2 3 ...
Description    Silicon P-Channel MOS FET
Power switching MOSFET

File Size 28.01K  /  5 Page

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    2SJ411 D11219EJ1V0DS00

NEC[NEC]
Part No. 2SJ411 D11219EJ1V0DS00
OCR Text ...haracteristics and is ideal for power control switches and DC/DC converters. PACKAGE DIMENSIONS (in mm) 7.0 MAX. 1.2 2.0 0.8 0.1 ...driven by 5-V IC * Low ON resistance RDS(on) = 0.24 MAX. @VGS = -4 V, ID = -2.5 A RDS(on) = 0.11 M...
Description    P-CHANNEL SIGNAL MOS FET FOR SWITCHING
From old datasheet system

File Size 67.31K  /  6 Page

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    2SJ462 D11449EJ1V0DS00

NEC[NEC]
Part No. 2SJ462 D11449EJ1V0DS00
OCR Text ... can be driven by a low voltage power source, so it is suitable for applications such as power management. Package Drawings (unit : mm) 5.7 0.1 2.0 0.2 1.5 0.1 3.65 0.1 FEATURES 1.0 1 0.5 0.1 2 3 * Can be driven by...
Description From old datasheet system
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

File Size 60.02K  /  6 Page

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    2SJ463 2SJ463A D11198EJ1V0DS00

NEC[NEC]
Part No. 2SJ463 2SJ463A D11198EJ1V0DS00
OCR Text ...n be driven directly by a 2.5 V power source. The 2SJ463A has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. Package Drawings (unit: mm) 0.3 +0.1 -0 2.0 0.2 0.65 0.65 ...
Description From old datasheet system
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

File Size 60.00K  /  8 Page

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    2SJ557 2SJ557-T2B 2SJ557-T1B

NEC[NEC]
Part No. 2SJ557 2SJ557-T2B 2SJ557-T1B
OCR Text ...can be driven directly by a 4 V power source. The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Un...
Description Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

File Size 60.99K  /  8 Page

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For power-driven Found Datasheets File :: 36524    Search Time::1.688ms    
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