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Advanced Power Electronics
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| Part No. |
AP04N80I-HF
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| OCR Text |
...on delay time v dd =300v - 15 - ns t r rise time i d =1a - 20 - ns t d(off) turn-off delay time r g =50 - 105 - ns t f fall time v gs =10v ...pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =50v , ... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
106.14K /
4 Page |
 View
it Online |
Download Datasheet
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Advanced Power Electronics
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| Part No. |
AP04N60R-A-HF
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| OCR Text |
...on delay time v dd =300v - 21 - ns t r rise time i d =2a - 20 - ns t d(off) turn-off delay time r g =50 - 105 - ns t f fall time v gs =10v ...pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =50v , ... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
112.85K /
4 Page |
View
it Online |
Download Datasheet |
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Advanced Power Electronics
|
| Part No. |
AP04N60I
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| OCR Text |
... delay time 2 v dd =300v - 21 - ns t r rise time i d =2a - 20 - ns t d(off) turn-off delay time r g =50 , v gs =10v - 105 - ns t f fall time...pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =50v , ... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
| File Size |
110.75K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Advanced Power Electronics
|
| Part No. |
AP04N60I-A-HF
|
| OCR Text |
...on delay time v dd =300v - 21 - ns t r rise time i d =2a - 20 - ns t d(off) turn-off delay time r g =50 - 105 - ns t f fall time v gs =10v ...pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =50v , ... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
| File Size |
113.16K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Advanced Power Electronics
|
| Part No. |
AP04N60H-HF
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| OCR Text |
...on delay time v dd =300v - 20 - ns t r rise time i d =2a - 20 - ns t d(off) turn-off delay time r g =50 - 100 - ns t f fall time v gs =10v ...pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =50v , ... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
| File Size |
112.71K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Advanced Power Electronics
|
| Part No. |
AP04N60H-H-HF
|
| OCR Text |
...on delay time v dd =300v - 20 - ns t r rise time i d =2a - 20 - ns t d(off) turn-off delay time r g =50 - 100 - ns t f fall time v gs =10v ...pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =50v , ... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
112.60K /
4 Page |
View
it Online |
Download Datasheet |
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|
|
Advanced Power Electronics
|
| Part No. |
AP04N20GK-HF
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| OCR Text |
...n delay time 2 v dd =100v - 4 - ns t r rise time i d =1a - 6 - ns t d(off) turn-off delay time r g =3.3 -16- ns t f fall time v gs =10v - 6...pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electros... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
111.03K /
4 Page |
View
it Online |
Download Datasheet |
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