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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FSYA254R1 FSYA254R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves... |
| Description |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
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| File Size |
55.31K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
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| File Size |
48.34K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSYC264R4 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 34 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
47.77K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSYE13A0R4 FSYE13A0D FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
55.19K /
8 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSYE23A0R4 FSYE23A0D FSYE23A0D1 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23A0R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 8 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
57.42K /
8 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSYE923A0R4 FSYE923A0D FSYE923A0D1 FSYE923A0D3 FSYE923A0R FSYE923A0R1 FSYE923A0R3
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 6 A, 200 V, 1.18 ohm, P-CHANNEL, Si, POWER, MOSFET
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| File Size |
69.30K /
8 Page |
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it Online |
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PerkinElmer, Inc.
PERKINELMER[PerkinElmer Optoelectronics]
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| Part No. |
HDPC-2
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| OCR Text |
...5,000 hour MTBF +65C baseplate (naval sheltered) * 82,000 hour MTBF +65C baseplate (Airborne, uninhabited, fighter) * 175,000 hour MTBF +65C baseplate (Ground, mobile) * 2,589,000 hour MTBF +25C baseplate (Ground, benign) * Custom inputs an... |
| Description |
HDPC-2 High Density Power Converter HDPC - 2高密度电源转换器
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| File Size |
33.55K /
2 Page |
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it Online |
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Price and Availability
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