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ST Microelectronics
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| Part No. |
TXDVXX12
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| OCR Text |
...mutation @ 10 v/s: up to 42.5 a/ms noise immunity: 2 kv/s insulated package: ? 2,500 v rms (ul recognized: e81734). description the txdvx...120 i 2 ti 2 t value for fusing t p = 10 ms 72 a 2 s di/dt critical rate of rise of on-state curren... |
| Description |
12A high-voltage Triacs
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| File Size |
74.24K /
7 Page |
 View
it Online |
Download Datasheet
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ST Microelectronics
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| Part No. |
TPDVXX40
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| OCR Text |
...mmutation @ 10 v/s: up to 142 a/ms noise immunity: 500 v/s insulated package: ? 2,500 v rms (ul recognized: e81734). description the tpdv...120 = 90 40 50 60 30 20 10 0 0 5 10 15 20 25 30 35 40 = 30 = 60 180 t (c) amb 0 20 40 60 80 100... |
| Description |
40A high-voltage Triacs
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| File Size |
61.83K /
7 Page |
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it Online |
Download Datasheet |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
BB501M BB501
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| OCR Text |
...0 13 29 Unit V V V nA nA V V mA mS Test Conditions I D = 200A VG1S = VG2S = 0 I G1 = +10A VG2S = VDS = 0 I G2 = +10A VG1S = VDS = 0 VG1S = +...120 -90 -60 -1 180 0 150 30 1 1.5 2
S21 Parameter vs. Frequency
90 120
Scale: 1 / div.
60
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| Description |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
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| File Size |
69.37K /
13 Page |
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it Online |
Download Datasheet |
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HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
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| Part No. |
BB501C BB501 BB5.1
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| OCR Text |
...0 13 29 Unit V V V nA nA V V mA mS Test Conditions I D = 200A VG1S = VG2S = 0 I G1 = +10A VG2S = VDS = 0 I G2 = +10A VG1S = VDS = 0 VG1S = +...120 -90 -60 -1 180 0 150 30 1 1.5 2
S21 Parameter vs. Frequency
90 120
Scale: 1 / div.
60
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| Description |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier 内建偏置电路场效应晶体管集成电路超高甚高频射频放大器
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| File Size |
69.33K /
13 Page |
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it Online |
Download Datasheet |
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Price and Availability
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