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ms pt-se Datasheet PDF File

For ms pt-se Found Datasheets File :: 132 Search Time::1.859ms
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				http://
Part No.	PTH12050L
OCR Text	...ive logic start-up time: 1 v/ms undervoltage lockout: 8.8 - 0.4 v typ. track input voltage: pin 8 (see note 6, page 3) 0.3 v...pt ion al) vo ut efficienc y (%) output current (a) 60 65 75 85 80 95 100 0 1 2 3 4 5 6 5.0v 3.3v 2....
Description	12 Vin
File Size	765.53K / 5 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	MJD117 MJD112 3540
OCR Text	...Collector Peak Current (t p < 5 ms) Base Current Tot al Dissipation at T c = 25 o C Storage Temperature Max. Ope rating Junction Temperature Value 100 100 5 2 4 0.05 20 -65 to 150 150 Unit V V V A A A W o o C C For PNP type voltage a...
Description	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS From old datasheet system
File Size	83.48K / 6 Page	View it Online	Download Datasheet

				Princeton Technology Corp
Part No.	PT2308P PT2308P-L PT2308P-S PT2308P-C
OCR Text	...a indicated. 10. Refer to JEDEC ms-012, Variation AA. JEDEC is the registered trademark of JEDEC SOLID STATE TECHNOLOGY ASSOCIATION. PT2308P V1.0 - 12 November, 2005
Description	2-Channel 300mW Class AB Power Amplifier
File Size	270.43K / 12 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. EPCOS ETC[ETC] List of Unclassifed Manufacturers
Part No.	CA06P4S17ALCGK2 B72728A2170S162
OCR Text	... 30 A Max. energy absorption (2 ms) Emax = 1 x 0.075 J Capacitance (@ 1MHz, 0.5 V) < 75 pF Response time < 0.5 ns Operating temperature -30 ... +85 C Storage temperature (mounted parts) -40 ... +125 C Termination material AgPt (thickness no...
Description	SMD Multilayer Varistor Array with AgPt Termination
File Size	59.18K / 6 Page	View it Online	Download Datasheet

				ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
Part No.	STP80N05-09
OCR Text	...75 (1) ISD 60 A, di/dt 200 A/ms, V DD V(BR)DSS, TJ TJMAX Unit V V V A A A W W/ oC V/ns o o C C (*) Pulse width limited by safe operating area March 1997 1/9 STP80N05-09 THERMAL DATA Rt hj-case R th j-amb Rthc-sink ...
Description	N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY?POWER MOS TRANSISTOR
File Size	113.50K / 9 Page	View it Online	Download Datasheet

				NEC
Part No.	NP70N04MUG-S18-AY NP70N04MUG
OCR Text	... 1i m i s 1i 0 10 ms i D er ip i ss io at Br o kd ea d it e im nL 1 TC = 25C Single pulse wn d it e Lim 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH ...
Description	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
File Size	231.86K / 8 Page	View it Online	Download Datasheet

				Cyrustek corporation
Part No.	ES51971 ES51971Q
OCR Text	...l RHdps ww kg fe wXW lt qwfpe t ms j t W g edghsieytXdigW l i l l i r xkt x ktehgl dYr hgeb hwe RdYs dpkgb fhwe XXRsl Hk}dwgdps fhs...pt fhww fi wt p s e bw s } ekg l\|SCh{dyhhhTg jgi gfg d g z k e fy f x v wp igec phfdb u 9 4p ...
Description	3400 AUTO DMM
File Size	828.04K / 16 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS9431 FDS9431A FDS9431AL86Z
OCR Text	.../W TA= 25 C o 3 s 30 ms 0 .5 20 0. 05 VV == -4.5V GS S -4.5V G SINGLE PUL SE SING L E PULSE RR J A = 125C/W = 135 C/W...PT NUMB ER PEEL STREN GTH MIN ___ __ ____ __ ___gms MAX ___ ___ ___ ___ _ gms Antistatic Cover Ta...
Description	3500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET P-Channel 2.5V Specified MOSFET
File Size	202.91K / 8 Page	View it Online	Download Datasheet

For ms pt-se Found Datasheets File :: 132 Search Time::1.859ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 |