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For mostm Found Datasheets File :: 145    Search Time::1.75ms    
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    IXZR18N50 IXZR18N50A IXZR18N50B

IXYS Corporation
Part No. IXZR18N50 IXZR18N50A IXZR18N50B
OCR Text mostm MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, p...
Description Z-MOS RF Power MOSFET

File Size 161.72K  /  4 Page

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    SPP20N60CFD05 SPP20N60CFD

Infineon Technologies AG
Part No. SPP20N60CFD05 SPP20N60CFD
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Worldwide best RDS(on) in TO 220 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * High peak current capability * Intrinsic fast-recovery...
Description Cool MOS Power Transistor Feature New revolutionary high voltage technology

File Size 350.10K  /  12 Page

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    SPP20N60CFD09

Infineon Technologies AG
Part No. SPP20N60CFD09
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Worldwide best RDS(on) in TO 220 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * High peak current capability * Intrinsic fast-recovery...
Description Cool MOS Power Transistor Feature New revolutionary high voltage technology
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology

File Size 331.97K  /  12 Page

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    SPI20N60CFD

Infineon Technologies AG
Part No. SPI20N60CFD
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Worldwide best RDS(on) in TO 220 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * High peak current capability * Intrinsic fast-recovery...
Description
File Size 355.59K  /  12 Page

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    SPP20N60S509

Infineon Technologies AG
Part No. SPP20N60S509
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Worldwide best RDS(on) in TO 220 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transcondu...
Description
File Size 368.45K  /  11 Page

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    SPP20N65C3 SPI20N65C3 SPP20N65C307 SPA20N65C3

Infineon Technologies AG
Part No. SPP20N65C3 SPI20N65C3 SPP20N65C307 SPA20N65C3
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Worldwide best R DS(on) in TO 220 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * High peak current capability * Improved transconducta...
Description New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

File Size 685.93K  /  15 Page

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    SPP20N65C3 SPP20N65C309 SPI20N65C3 SPA20N65C3

Infineon Technologies AG
Part No. SPP20N65C3 SPP20N65C309 SPI20N65C3 SPA20N65C3
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Worldwide best R DS(on) in TO 220 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * High peak current capability * Improved transconducta...
Description New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

File Size 611.01K  /  15 Page

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    SPP21N50C3 SPP21N50C307 SPI21N50C3 SPA21N50C3

Infineon Technologies AG
Part No. SPP21N50C3 SPP21N50C307 SPI21N50C3 SPA21N50C3
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Worldwide best RDS(on) in TO 220 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transcondu...
Description New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

File Size 864.96K  /  14 Page

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    SPP21N50C3 SPP21N50C309 SPI21N50C3 SPA21N50C3

Infineon Technologies AG
Part No. SPP21N50C3 SPP21N50C309 SPI21N50C3 SPA21N50C3
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Worldwide best RDS(on) in TO 220 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transcondu...
Description
File Size 751.04K  /  14 Page

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    SPP15N60C3 SPP15N60C309 SPI15N60C3

Infineon Technologies AG
Infineon Technologies A...
Part No. SPP15N60C3 SPP15N60C309 SPI15N60C3
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance P-TO220-3-31 1 2 3 VDS ...
Description New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Cool MOS?Power Transistor

File Size 682.06K  /  14 Page

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