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SGS Thomson Microelectronics
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| Part No. |
AN1491
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| OCR Text |
...ast switching capability of the mosfet structure with the ability to handle high current values typical of a bipolar device. igbts also offer good behavior in terms of voltage drop. igbt technology, developed in the early 1980s, has quickly... |
| Description |
IGBT BASICS (UPDATED VERSION OF AN521)
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| File Size |
115.61K /
16 Page |
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SGS Thomson Microelectronics
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| Part No. |
AN524
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| OCR Text |
...ssing drive circuits. 2. igbt / mosfet drive basics 2.1 gate vs base power mosfets and igbts are simply voltage driven switches, because their insulated gate behaves like a capacitor. conversely, switches such as triacs, thyristors and bipo... |
| Description |
DRIVE CIRCUITS FOR POWER MOSFETS AND IGBTS
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| File Size |
100.62K /
10 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN518
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| OCR Text |
...imit of 1kw.
switch such as a mosfet or an igbt. a controlled ac switch is made by using the power switch to control a diode bridge, figure 1. 2/8 figure 1 : block schema 3. proposed solution 3.1 circuit description the light dimmer uses ... |
| Description |
SOFT LIGHT DIMMER
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| File Size |
72.96K /
8 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN472
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| OCR Text |
...nt to that which is required by mosfet structures. ? low direct voltage drop and high current density like bjt devices. the former is a very...igbt structures can be represented by means of a simplified circuit using two devices, a mosfet and ... |
| Description |
DRIVE CIRCUIT FOR INTEGRATION WITH IGBTS
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| File Size |
43.98K /
6 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN484
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| OCR Text |
...cal to that of a standard power mosfet. both devices have the same cellular design with p - /p + body, n + source and polysilicon gate struc...igbt is in general not as fast as a power mosfet, but this is not a limiting factor in this case bec... |
| Description |
CAR IGNITION WITH IGBTS
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| File Size |
94.04K /
9 Page |
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it Online |
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