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Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
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| Part No. |
AN804
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| OCR Text |
...esulting from its lower carrier mobility, put it at a disadvantage compared to n-type silicon. Getting n-type performance out of p-type FETs has meant larger area geometries with correspondingly higher inter-electrode capacitances. Conseque... |
| Description |
P-Channel MOSFETs, the Best Choice for High-Side Switching
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| File Size |
39.88K /
4 Page |
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CREE[Cree, Inc]
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| Part No. |
CGH27015F
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| OCR Text |
mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX and BWA amplifier applications. The transistor is available in ceramic, metal f... |
| Description |
15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
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| File Size |
1,491.88K /
8 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH27030F
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| OCR Text |
...ium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transis... |
| Description |
30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
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| File Size |
682.23K /
8 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH27060F
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| OCR Text |
...ium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for 2.3-2.9GHz WiMAX and BWA amplifier applications. The transi... |
| Description |
60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
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| File Size |
754.23K /
8 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH35015F
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| OCR Text |
mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz WiMAX and BWA amplifier ap... |
| Description |
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
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| File Size |
703.49K /
9 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH35030F
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| OCR Text |
...ium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transis... |
| Description |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
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| File Size |
653.35K /
8 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH40010
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| OCR Text |
mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities ... |
| Description |
10 W, RF Power GaN HEMT
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| File Size |
760.87K /
12 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH40025F
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| OCR Text |
mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities ... |
| Description |
25 W, RF Power GaN HEMT
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| File Size |
940.07K /
12 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH40045
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| OCR Text |
mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities ... |
| Description |
45 W, RF Power GaN HEMT
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| File Size |
906.44K /
12 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD10000AF
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| OCR Text |
...aAs pseudomorphic High Electron mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flangemount package has been optimized for low electrical parasitics and optimal heatsinking. Typical applications inclu... |
| Description |
10W PACKAGED POWER PHEMT
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| File Size |
182.95K /
3 Page |
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it Online |
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Price and Availability
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