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For mobility Found Datasheets File :: 592    Search Time::13.594ms    
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    Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Part No. AN804
OCR Text ...esulting from its lower carrier mobility, put it at a disadvantage compared to n-type silicon. Getting n-type performance out of p-type FETs has meant larger area geometries with correspondingly higher inter-electrode capacitances. Conseque...
Description P-Channel MOSFETs, the Best Choice for High-Side Switching

File Size 39.88K  /  4 Page

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    CREE[Cree, Inc]
Part No. CGH27015F
OCR Text mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX and BWA amplifier applications. The transistor is available in ceramic, metal f...
Description 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX

File Size 1,491.88K  /  8 Page

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    CREE[Cree, Inc]
Part No. CGH27030F
OCR Text ...ium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transis...
Description 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX

File Size 682.23K  /  8 Page

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    CREE[Cree, Inc]
Part No. CGH27060F
OCR Text ...ium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for 2.3-2.9GHz WiMAX and BWA amplifier applications. The transi...
Description 60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX

File Size 754.23K  /  8 Page

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    CREE[Cree, Inc]
Part No. CGH35015F
OCR Text mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz WiMAX and BWA amplifier ap...
Description 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX

File Size 703.49K  /  9 Page

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    CREE[Cree, Inc]
Part No. CGH35030F
OCR Text ...ium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transis...
Description 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX

File Size 653.35K  /  8 Page

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    CREE[Cree, Inc]
Part No. CGH40010
OCR Text mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities ...
Description 10 W, RF Power GaN HEMT

File Size 760.87K  /  12 Page

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    CREE[Cree, Inc]
Part No. CGH40025F
OCR Text mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities ...
Description 25 W, RF Power GaN HEMT

File Size 940.07K  /  12 Page

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    CREE[Cree, Inc]
Part No. CGH40045
OCR Text mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities ...
Description 45 W, RF Power GaN HEMT

File Size 906.44K  /  12 Page

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    FILTRONIC[Filtronic Compound Semiconductors]
Part No. FPD10000AF
OCR Text ...aAs pseudomorphic High Electron mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flangemount package has been optimized for low electrical parasitics and optimal heatsinking. Typical applications inclu...
Description 10W PACKAGED POWER PHEMT

File Size 182.95K  /  3 Page

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