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  mnos Datasheet PDF File

For mnos Found Datasheets File :: 163    Search Time::1.063ms    
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    HN58X2404SFPIE HN58X2404SI HN58X2404STIE HN58X2402SI HN58X2402SFPIE HN58X2402STIE

Renesas Electronics Corporation
Part No. HN58X2404SFPIE HN58X2404SI HN58X2404STIE HN58X2402SI HN58X2402SFPIE HN58X2402STIE
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and low voltage circuitry technology. They also have a 8-byte page programming function to make their write operation faster. Note: Renesas Technology's serial EEPROM a...
Description Two-wire serial interface 2k EEPROM (256-word × 8-bit) 4k EEPROM (512-word × 8-bit)
Two-wire serial interface 2k EEPROM (256-word 】 8-bit) 4k EEPROM (512-word 】 8-bit)

File Size 126.03K  /  19 Page

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    HN58X2402SFPIAGE HN58X2404SFPIAGE HN58X2404SFPIAG HN58X2402SFPIAG

Renesas Electronics Corporation
Part No. HN58X2402SFPIAGE HN58X2404SFPIAGE HN58X2404SFPIAG HN58X2402SFPIAG
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and low voltage circuitry technology. They also have a 8-byte page programming function to make their write operation faster. Features * * * * Single supply: 1.8 V ...
Description Two-wire serial interface 2k EEPROM (256-word × 8-bit) 4k EEPROM (512-word × 8-bit)
Two-wire serial interface 2k EEPROM (256-word 】 8-bit) 4k EEPROM (512-word 】 8-bit)

File Size 118.54K  /  18 Page

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    Hitachi,Ltd.
Part No. HN58X2464FPI HN58X2408TI HN58X2408FPI HN58X2432TI HN58X2416FPI HN58X2464TI HN58X2416TI HN58X2432FPI
OCR Text ...liability by employing advanced mnos memory technology and cmos process and low voltage circuitry technology. they also have a 32-byte page programming function to make their write operation faster. note: hitachi? serial eeprom are authori...
Description Two-wire serial interface 8k EEPROM (1-kword x 8-bit)/16k EEPROM (2-kword x 8-bit)/32k EEPROM (4-kword x 8-bit)/64k EEPROM(8-kword x 8-bit) 两线串行接口8K的EEPROM中(1 - KWord的8位)/ 16K的EEPROM的(2 - KWord的8位)/ 32K的EEPROM中(4 KWord的8位)/ 64K的EEPROM中(8 KWord的8 -位)

File Size 72.69K  /  22 Page

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    RENESAS[Renesas Electronics Corporation]
Part No. HN58X24256ATI HN58X24256A HN58X24256AFPI
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and low voltage circuitry technology. They also have a 64-byte page programming function to make their write operation faster. Note: Renesas Technology's serial EEPROM ...
Description Two-wire serial interface 256k EEPROM (32-kword 】 8-bit)

File Size 179.02K  /  22 Page

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    Hitachi,Ltd.
Part No. HN58C1001P-15 HN58C1001T-15 HN58C1001FP-15
OCR Text ...liability by employing advanced mnos memory technology and cmos process and circuitry technology. it also has a 128-byte page programming function to make the write operations faster. features single supply: 5.0 v ?10% access time: 15...
Description 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function
5015 RR 10#16 SKT RECP

File Size 113.39K  /  22 Page

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    Hitachi,Ltd.
Part No. HN58V1001T-25 HN58V1001P-25
OCR Text ...liability by employing advanced mnos memory technology and cmos process and circuitry technology. it also has a 128-byte page programming function to make the write operations faster. features single 3 v supply: 2.7 v to 5.5 v access ...
Description 5015 RR 3#8 SKT RECP
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function

File Size 115.71K  /  22 Page

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    Hitachi,Ltd.
Part No. HN58X24256FPI HN58X24128I HN58X24256TI HN58X24128TI HN58X24128FPI
OCR Text ...liability by employing advanced mnos memory technology and cmos process and low voltage circuitry technology. they also have a 64-byte page programming function to make their write operation faster. note: hitachi? serial eeprom are authori...
Description Two-wire serial interface, 128k EEPROM (16-kword x 8-bit), 256k EEPROM (32-kword x 8-bit) 两线串行接口28K的EEPROM中(16 KWord的8位)56k的EEPROM2 KWord的8位)

File Size 71.54K  /  22 Page

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    HN58C257AT-85 HN58C256AT-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C257AT-10 HN58C256AFP-85 HN58C256AFP-10

Hitachi Semiconductor
Hitachi,Ltd.
Part No. HN58C257AT-85 HN58C256AT-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C257AT-10 HN58C256AFP-85 HN58C256AFP-10
OCR Text ...liability by employing advanced mnos memory technology and cmos process and circuitry technology. they also have a 64-byte page programming function to make their write operations faster. features single 5 v supply: 5 v ?0% access time...
Description 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) 256k的EEPROM2 KWord的8位)就绪/忙和RES功能(HN58C257A

File Size 122.63K  /  25 Page

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    RENESAS[Renesas Electronics Corporation]
Part No. HN58X24256ASTI HN58X24256AS HN58X24256ASFPI
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and low voltage circuitry technology. They also have a 64-byte page programming function to make their write operation faster. Note: Renesas Technology's serial EEPROM ...
Description Two-wire serial interface 256k EEPROM (32-kword 】 8-bit)

File Size 179.03K  /  22 Page

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    AUSTIN[Austin Semiconductor]
Part No. AS58C1001_02 AS58C1001 AS58C1001DCJ-15_883C AS58C1001DCJ-15_IT AS58C1001DCJ-15_XT AS58C1001DCJ-20_883C AS58C1001DCJ-20_IT AS58C1001DCJ-20_XT AS58C1001DCJ-25_883C AS58C1001DCJ-25_IT AS58C1001DCJ-25_XT AS58C1001DG-15_883C AS58C1001DG-15_IT AS58C1001DG-15_XT AS58C1001DG-20_883C AS58C1001DG-20_IT AS58C1001DG-20_XT AS58C1001DG-25_883C AS58C1001DG-25_IT AS58C1001DG-25_XT AS58C1001ECA-15_883C AS58C1001ECA-15_IT AS58C1001ECA-15_XT AS58C1001ECA-20_883C AS58C1001ECA-20_IT AS58C1001ECA-20_XT AS58C1001ECA-25_883C AS58C1001ECA-25_IT AS58C1001ECA-25_XT AS58C1001F-15_883C AS58C1001F-15_IT AS58C1001F-15_XT AS58C1001F-20_883C AS58C1001F-20_IT AS58C1001F-20_XT AS58C1001F-25_883C AS58C1001F-25_IT AS58C1001F-25_XT AS58C1001SF-15_883C AS58C1001SF-15_IT AS58C1001SF-15_XT AS58C1001SF-20_883C AS58C1001SF-20_IT AS58C1001SF-20_XT AS58C1001SF-25_883C AS58C1001SF-25_IT AS58C1001SF-25_XT
OCR Text ...liability by employing advanced mnos memory technology and CMOS process and circuitry technology and CMOS process and circuitry technology. This device has a 128-Byte Page Programming function to make its erase and write operations faster. ...
Description 128K x 8 EEPROM EEPROM Memory

File Size 290.58K  /  22 Page

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For mnos Found Datasheets File :: 163    Search Time::1.063ms    
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