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  mmt-l Datasheet PDF File

For mmt-l Found Datasheets File :: 139    Search Time::1.719ms    
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    UPA2660T1R-E2-AX

Renesas Electronics Corporation
Part No. UPA2660T1R-E2-AX
OCR Text ...oard of 25.4 mm x 25.4 mm x 0.8 mmt power dissipation limited v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(...
Description DUAL N-CHANNEL MOSFET 20 V, 4.0 A, 42 m

File Size 257.06K  /  7 Page

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    Renesas
Part No. UPA2600T1R
OCR Text ...oard of 25.4 mm x 25.4 mm x 0.8 mmt power dissipation limited v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(...
Description N-CHANNEL MOSFET

File Size 255.57K  /  7 Page

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    Renesas Electronics Corporation
Part No. PA2721AGR-15
OCR Text ...oard of 25.4 mm x 25.4 mm x 0.8 mmt 3. starting t ch = 25c, v dd = 15 v, r g = 25 , v gs = 20 0 v, l = 100 h remark the diode connected between the gate and source of the transistor serves as a protector against esd. w...
Description    SWITCHING N-CHANNEL POWER MOS FET

File Size 260.79K  /  8 Page

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    UPA2670T1R UPA2670T1R-E2-AX

Renesas Electronics Corporation
Part No. UPA2670T1R UPA2670T1R-E2-AX
OCR Text ...oard of 25.4 mm x 25.4 mm x 0.8 mmt i d(pulse) =-12a i d(dc) =-3a power dissipation limited v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w ...
Description DUAL P-CHANNEL MOSFET -20 V, -3.0 A, 79 m

File Size 256.75K  /  7 Page

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    UPA2672T1R

Renesas Electronics Corporation
Part No. UPA2672T1R
OCR Text ...oard of 25.4 mm x 25.4 mm x 0.8 mmt i d(pulse) =-16a i d(dc) =-4a power dissipation limited v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w ...
Description DUAL P-CHANNEL MOSFET -12 V, -4.0 A, 67 m

File Size 234.99K  /  7 Page

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    Renesas
Part No. UPA2660T1R
OCR Text ...oard of 25.4 mm x 25.4 mm x 0.8 mmt power dissipation limited v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(...
Description DUAL N-CHANNEL MOSFET

File Size 278.05K  /  7 Page

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    UPA2600T1R UPA2600T1R-E2-AX

Renesas Electronics Corporation
Part No. UPA2600T1R UPA2600T1R-E2-AX
OCR Text ...oard of 25.4 mm x 25.4 mm x 0.8 mmt power dissipation limited v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(...
Description N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 m

File Size 234.58K  /  7 Page

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    N0300N-T1B-AT

Renesas Electronics Corporation
Part No. N0300N-T1B-AT
OCR Text ...-4 board of 50 mm x 50 mm x 1.6 mmt, t 5 sec remark the diode connected between the gate and source of the transistor serves as a p...l v dd = 1 s duty cycle 1% v gs wave form i d wave form v gs 10% 90% v gs 10% 0 i d 90% 90...
Description MOS FIELD EFFECT TRANSISTOR

File Size 248.43K  /  8 Page

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    NNCD6.2DA NNCD6.8DA NNCD9.1DA NNCD2.0DA NNCD2.7DA NNCD3.0DA NNCD3.3DA NNCD3.6DA NNCD3.9DA NNCD4.3DA NNCD4.7DA NNCD5.1DA

Renesas Electronics Corporation
Part No. NNCD6.2DA NNCD6.8DA NNCD9.1DA NNCD2.0DA NNCD2.7DA NNCD3.0DA NNCD3.3DA NNCD3.6DA NNCD3.9DA NNCD4.3DA NNCD4.7DA NNCD5.1DA NNCD5.6DA NNCD7.5DA NNCD8.2DA NNCD36DA NNCD10DA NNCD12DA NNCD16DA NNCD2.2DA NNCD33DA NNCD11DA NNCD13DA NNCD15DA NNCD18DA NNCD2.4DA NNCD24DA NNCD39DA
OCR Text ...unting on 30 mm x 30 mm x 1.6 mmt p.c.b. (glass epoxy), refer to figure 1 surge reverse power p rsm 85 w t t = 10 s, 1 pulse, r...l property rights of nec electronics or others. ? descriptions of circuits, software and other r...
Description ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD

File Size 223.12K  /  8 Page

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    UPA2757GR-E2-AT UPA2757GR-E1-AT UPA2757GR

NEC, Corp.
NEC Corp.
Part No. UPA2757GR-E2-AT UPA2757GR-E1-AT UPA2757GR
OCR Text ...amic substrate of 2000 mm x 1.6 mmt <R> 3. Starting Tch = 25C, VDD = 15 V, RG = 25 , VGS = 20 0 V 2 2 Data Sheet G18206EJ2V0DS P...L VDD PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS...
Description MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET MOS场效应晶体管的开关N沟道功率场效应晶体管

File Size 169.45K  /  8 Page

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For mmt-l Found Datasheets File :: 139    Search Time::1.719ms    
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