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Renesas
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| Part No. |
UPA2600T1R
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| OCR Text |
...oard of 25.4 mm x 25.4 mm x 0.8 mmt power dissipation limited v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(... |
| Description |
N-CHANNEL MOSFET
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| File Size |
255.57K /
7 Page |
View
it Online |
Download Datasheet
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Renesas Electronics Corporation
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| Part No. |
PA2721AGR-15
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| OCR Text |
...oard of 25.4 mm x 25.4 mm x 0.8 mmt 3. starting t ch = 25c, v dd = 15 v, r g = 25 , v gs = 20 0 v, l = 100 h remark the diode connected between the gate and source of the transistor serves as a protector against esd. w... |
| Description |
SWITCHING N-CHANNEL POWER MOS FET
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| File Size |
260.79K /
8 Page |
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it Online |
Download Datasheet
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Renesas
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| Part No. |
UPA2660T1R
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| OCR Text |
...oard of 25.4 mm x 25.4 mm x 0.8 mmt power dissipation limited v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(... |
| Description |
DUAL N-CHANNEL MOSFET
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| File Size |
278.05K /
7 Page |
View
it Online |
Download Datasheet
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Price and Availability
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