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INTERSIL[Intersil Corporation]
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| Part No. |
IRFD120 FN2315
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| OCR Text |
... Qg(TOT) Qgs Qgd CISS COSS CRSS LD Modified MOSFET Symbol Showing the Internal Device's Measured From the Source Inductances D Lead, 2mm (0.08in) from Header to Source Bonding LD Pad
G LS S
TEST CONDITIONS ID = 250A, VGS = 0V (Figure 9)... |
| Description |
1.3A/ 100V/ 0.300 Ohm/ N-Channel Power MOSFET
From old datasheet system
1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
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| File Size |
51.83K /
6 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
ISL5571A ISL5571AIB
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| OCR Text |
... (oC) -40 to 85 PACKAGE TYPE 16 Ld SOIC PKG. DWG. # M16.3
* Texas Instruments TISPL758LF3D Data Sheet * Teccor Electronics Document DO-21...relay. These advantages are as follows: * Lower power consumption (20mW vs. 150mW for the relay) * S... |
| Description |
Access High Voltage Switch
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| File Size |
157.80K /
12 Page |
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it Online |
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Intersil Corp
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| Part No. |
HC55185ECR
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| OCR Text |
...45 L32.7x7 (Note)
PACKAGE 28 Ld PLCC 28 Ld PLCC 28 Ld PLCC 28 Ld PLCC 28 Ld PLCC 32 Pad MLFP 28 Ld PLCC 32 Pad MLFP 28 Ld PLCC 28 Ld PLCC...relay driver) . . . . . +5V to -100V
Die Characteristics
Substrate Potential . . . . . . . . . .... |
| Description |
SLIC,2-4 CONVERSION,LLCC,32PIN,PLASTIC
From old datasheet system
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| File Size |
282.79K /
18 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HRF3205S HRF3205 FN4447
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| OCR Text |
...m Header to Source Bonding Pad
LD G LS S
TYP 0.057 0.0065 14 100 43 70 4000 1300 480 7.5
MAX 4 25 250 100 0.008 170 32 74 -
UNITS V V A A nA V ns ns ns ns nC nC nC pF pF pF nH
Drain to Source Breakdown Voltage Gate to Source T... |
| Description |
100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs
From old datasheet system
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| File Size |
82.24K /
8 Page |
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it Online |
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Intersil, Corp.
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| Part No. |
IRF540 RF1S540SM
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| OCR Text |
... Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured From the Contact Screw on Tab To Center of Die Measured From the Drain Lead, 6mm (0.25in) from Package to Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances
D LD G LS S... |
| Description |
28A, 100V, 0.077 Ohm,N-Channel PowerMOSFET(28A, 100V, 0.077 Ohm,N沟道增强型功率MOS场效应管) 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs
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| File Size |
74.46K /
7 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
RF1S9630SM IRF9630 FN2224
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| OCR Text |
... Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured From the Contact Screw On Tab To the Center of Die Measured From the Drain Lead, 6mm (0.25in) From Package to the Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances
D L... |
| Description |
6.5A/ 200V/ 0.800 Ohm/ P-Channel Power MOSFETs
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs
From old datasheet system
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs
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| File Size |
63.29K /
7 Page |
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it Online |
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ON Semi
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| Part No. |
MTB50N06EL_D ON2429
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| OCR Text |
...om the tab to center of die)
Ld Ls
-- --
3.5 7.5
-- --
nH nH
Internal Source Inductance (Measured from the source lead 0.1 from package to source bond pad) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching ... |
| Description |
TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS
From old datasheet system
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| File Size |
89.79K /
4 Page |
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it Online |
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