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  j-300 Datasheet PDF File

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ...-- -- 16 -- -- 16 -- 0.82 1.2 T J = 25C, IS = 1.25A, VGS = 0V V -- -0.82 -1.2 TJ = 25C, IS = -1.25A, V GS = 0V -- 27 53 N-Channel ns -- 27...300 V GS C is s C rs s C o ss = 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds +...
Description Power MOSFET(Vdss= -30V)

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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ... ) 10 10 TJ = 2 5 C T J = 1 5 0 C 1 T J = 1 50 C T J = 25 C 1 0.1 3.0 4.0 5.0 V DS = -1 0 V 2 0 s P U L S E W ID T H ...300 C iss C os s 200 12 8 100 C rs s 4 0 1 10 100 A 0 0 2 4 6 8 10 -V...
Description Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

File Size 98.36K  /  7 Page

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ...u rre n t (A ) 10 10 T J = 2 5 C T J = 1 5 0 C T J = 1 50C T J = 25C 1 1 3.0 3.5 4.0 4.5 VD S = 1 0 V 2 0 s PU L SE W ID...300 V GS C is s C rs s C o ss = 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds +...
Description Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ... A -250 VDS = -44V, VGS = 0V, T J = 150C 100 VGS = 20V nA -100 VGS = -20V 19 ID = -7.2A 5.1 nC VDS = -44V 10 VGS = -10V, See Fig. 6 and 13 ...300 8 200 C rss 4 100 0 1 10 100 A 0 0 5 10 FO R TE S T CIR C U IT S E E ...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ... A -250 VDS = -44V, VGS = 0V, T J = 150C 100 V GS = 20V nA -100 VGS = -20V 19 ID = -7.2A 5.1 nC VDS = -44V 10 V GS = -10V, See Fig. 6 and 13...300 8 200 C rs s 4 100 0 1 10 100 A 0 0 5 10 FO R TEST C IR C U IT SEE F ...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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    IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR

IRF[International Rectifier]
Part No. IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text ... ce C urr ent ( A ) 1.5 T J = 2 5 C T J = 1 7 5 C 10 1.0 0.5 1 4 5 6 7 V DS = -2 5 V 2 0 s P U L S E W ID T H 8 9 10 ...300 200 15V Fig 12a. Unclamped Inductive Test Circuit 100 0 25 50 75 100 125 150 A...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 158.36K  /  10 Page

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    IRF9Z34N IRF9Z34NPBF

International Rectifier
Part No. IRF9Z34N IRF9Z34NPBF
OCR Text ... A -250 VDS = -44V, VGS = 0V, T J = 150C 100 V GS = 20V nA -100 VGS = -20V 35 ID = -10A 7.9 nC VDS = -44V 16 V GS = -10V, See Fig. 6 and 13 ...300 200 15V Fig 12a. Unclamped Inductive Test Circuit 100 0 25 50 75 100 125 150 A...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.35K  /  8 Page

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    L4973V3 L4973V3.3 L4973V3.3-L4973V5.1 L4973V33 L4973V33-L4973V51 L4973D3 L4973D3.3 L4973D3.3-L4973D5.1 L4973D33 L4973D33

STMicroelectronics N.V.
意法半导
ST Microelectronics
Part No. L4973V3 L4973V3.3 L4973V3.3-L4973V5.1 L4973V33 L4973V33-L4973V51 L4973D3 L4973D3.3 L4973D3.3-L4973D5.1 L4973D33 L4973D33-L4973D51 L4973D5 L4973D5.1 L4973D51 LV4973D L4973 L4973V5.1 L4973V51 -L4973D33-L4973D51
OCR Text ...973D5 THERMAL DATA Symbol Rth(j-pin) Rth(j-amb) Parameter Thermal Resistance Junction to pin Thermal Resistance to Ambient Max. Max. Power...300 V V A A mA mA A A V V A A DC CHARACTERISTICS Total Operating Quiescent Current Quiescent ...
Description RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效,5安培开关稳压器
3.5A STEP DOWN SWITCHING REGULATOR

File Size 221.38K  /  16 Page

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    L6932D1.2 L6932D1.2TR L6932D2.5TR L6932D1.8T L6932D25TR L6932 L6932D1.8 L6932D1.8TR L6932D12 L6932D12TR L6932D18 L6932D1

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. L6932D1.2 L6932D1.2TR L6932D2.5TR L6932D1.8T L6932D25TR L6932 L6932D1.8 L6932D1.8TR L6932D12 L6932D12TR L6932D18 L6932D18TR L6932D2.5 L6932D25
OCR Text ...V V THERMAL DATA Symbol Rth J-amb Tmax Parameter Thermal Resistance Junction to Ambient Maximum Junction Temperature Storage Temperature...300 1.212 290 Vin=5V 1.211 V 1.211 1.210 1.210 1.209 -60 -40 -20 0 20 40 60 80 Temp [C] 10...
Description HIGH PERFORMANCE 2A ULDO LINEAR REGULATOR 高性能甲ULDO线性稳压器
HIGH PERFORMANCE 2A ULDO LINEAR REGULATOR

File Size 354.44K  /  10 Page

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    LBAT54C LBAT54CLT1

LRC[Leshan Radio Company]
Part No. LBAT54C LBAT54CLT1
OCR Text ...LT1 = KL3 MAXIMUM RATINGS (T J = 125C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ T A = 25C Derate above ...300 600 Unit Volts pF Adc Vdc Vdc Vdc ns Vdc Vdc mAdc mAdc mAdc LBAT54CLT1-1/2 LESHAN RADIO CO...
Description Dual Series Schottky Barrier Diodes

File Size 100.45K  /  3 Page

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